Infineon Technologies CY7C1061G-10BVJXIT

Overview

CY7C1061G-10BVJXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability memory subsystems in industrial control and telecom infrastructure. It operates at 10 ns access time, supports 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, and features an ERR output pin for real-time single-bit error detection and correction during read cycles.

For engineers reviewing the CY7C1061G-10BVJXIT datasheet, CY7C1061G-10BVJXIT pinout, CY7C1061G-10BVJXIT application, or CY7C1061G-10BVJXIT equivalent, key selection criteria include ECC-enabled data integrity, multi-voltage compatibility, TSOP I/TSOP II/VFBGA package options, dual CE architecture, and 1.0 V data retention capability under low-power hold conditions.

Technical Context

This SRAM implements a synchronous, byte-selectable memory array with dedicated BHE/ BLE controls for independent upper- and lower-byte writes. Its ECC logic operates transparently on every read cycle, correcting single-bit errors without CPU intervention and asserting ERR high to signal correction events - no automatic write-back is performed.

The device supports three distinct V_CC operating windows with corresponding speed grades: 10 ns at 2.2–3.6 V and 4.5–5.5 V, and 15 ns at 1.65–2.2 V. Standby current drops to 20 mA typical in ISB2 mode, and data retention remains valid down to 1.0 V, enabling robust low-power suspend operation in mission-critical systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, lead-free (RoHS-compliant), industrial temperature grade (–40 °C to +85 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G-10BVJXIT uniquely delivers integrated ECC with active ERR signaling and triple-voltage support - critical for field-deployed systems where memory reliability must be guaranteed without host CPU involvement.

Availability

CY7C1061G-10BVJXIT is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging subsystems, and avionics sensor buffers requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY7C1061G-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and aerospace heritage.

CY7C1061G-10BVJXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered for high-reliability embedded systems where data integrity, multi-voltage interoperability, and extended temperature operation are mandatory design requirements.

FAQ

Does CY7C1061G-10BVJXIT perform automatic write-back after ECC correction?

No. The device corrects single-bit errors during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory cell. System firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that goes HIGH when a single-bit error is detected and corrected during a read access. If used, it requires an external pull-up resistor to V_CC; if unused, it must be left floating per Note 6 in the datasheet. It is not internally pulled up or down.

Can CY7C1061G-10BVJXIT operate at 2.5 V supply?

Yes - it supports the 2.2 V to 3.6 V V_CC range, and its 10 ns access time is specified at this range. At 2.5 V, timing and current parameters fall within the 2.2–3.6 V column of the DC Electrical Characteristics table, with ICC = 90 mA typical at 100 MHz.

Is the 48-ball VFBGA (BVJXI) package RoHS-compliant and lead-free?

Yes. The "X" suffix in BVJXIT indicates lead-free (Pb-free) construction, and the package meets RoHS Directive 2011/65/EU requirements. This is confirmed in the Ordering Information section (page 17) and Package Diagrams (page 20) of datasheet 001-81540 Rev. *T.