Infineon Technologies CY7C1061G-10BVXI

Overview

CY7C1061G-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability data storage in industrial control and telecom infrastructure. It operates at 10 ns access time, supports 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, delivers 90 mA typical active current at 100 MHz, and features an ERR output pin for real-time single-bit error detection and correction during read cycles.

For engineers reviewing the CY7C1061G-10BVXI datasheet, CY7C1061G-10BVXI pinout, CY7C1061G-10BVXI application, or CY7C1061G-10BVXI equivalent, this device is selected for systems requiring deterministic ECC protection without write-back, low-power standby (20 mA ISB2), TTL-compatible I/O, and 1.0 V data retention-especially where pin-compatible migration from legacy Cypress SRAMs is needed.

Technical Context

This SRAM implements a synchronous, byte-selectable memory architecture with dual chip enable (CE1/CE2) logic and independent BHE/BLE controls for upper/lower byte writes. Its ECC engine operates transparently on every read access, generating an active-high ERR signal when a correctable single-bit error is found in the accessed 16-bit word.

The device supports three distinct V_CC operating windows-1.65–2.2 V (15 ns speed grade), 2.2–3.6 V (10 ns), and 4.5–5.5 V (10 ns)-with corresponding ICC and ISB2 values validated per voltage band. All packages feature NC pins (e.g., A16, A18 in BVXI configuration) and require proper floating of unused ERR.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, industrial temperature grade (–40 °C to +85 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G-10BVXI uniquely delivers hardware-accelerated ECC with visible ERR indication across three voltage domains-enabling fail-safe data integrity in industrial, medical, and avionics systems where external correction logic is prohibited or impractical.

Availability

CY7C1061G-10BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card caches, medical imaging frame stores, and avionics data recorder buffers requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1061G-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

CY7C1061G-10BVXI belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for high-reliability, ECC-enabled data buffering in mission-critical embedded systems where data integrity cannot be compromised.

FAQ

Does CY7C1061G-10BVXI support automatic error correction write-back?

No. The device performs single-bit error correction transparently during read operations and asserts the ERR pin, but it does not automatically rewrite corrected data back to the memory array. Write-back must be implemented externally if persistent correction is required, as confirmed in Note 1 of the datasheet.

What is the function of the NC pins in the BVXI package?

NC (No Connect) pins-including A16 and A18 in the 48-ball VFBGA BVXI configuration-are physically present but not bonded to the silicon die. They must remain unconnected on the PCB; routing traces or applying voltage to these balls may cause electrical interference or mechanical stress.

Can the ERR pin be left unconnected if ECC functionality is unused?

Yes. Per Note 6 in the datasheet, the ERR pin is an open-drain output and should be left floating if not used. No pull-up or pull-down resistor is required unless the system needs to monitor error events, in which case a 4.7 kΩ pull-up to VCC is recommended.

How does the dual CE architecture affect memory mapping in multi-SRAM systems?

CE1 (active-low) and CE2 (active-high) combine to form a logical chip enable: CE is active only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding-e.g., using higher-order address bits to drive CE2 while CE1 is controlled by a local decoder-reducing gate count in large memory arrays.