Infineon Technologies CY7C1061G-10BVXIT
- Part No.:
- CY7C1061G-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061G-10BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1061G-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability data storage in industrial control and telecom infrastructure. It operates at 10 ns access time, supports 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, and features an ERR output pin for real-time single-bit error detection and correction during read cycles.
For engineers reviewing the CY7C1061G-10BVXIT datasheet, CY7C1061G-10BVXIT pinout, CY7C1061G-10BVXIT application, or CY7C1061G-10BVXIT equivalent, this device delivers deterministic ECC protection without automatic write-back, TTL-compatible I/Os, low standby current (20 mA typical), and dual chip enable support - critical for fault-tolerant memory subsystems in avionics data recorders, baseband processors, and programmable logic controllers.
Technical Context
The CY7C1061G-10BVXIT implements a synchronous SRAM architecture with dedicated ECC logic that computes and checks Hamming codes on every read access. Its ERR pin asserts high only when a correctable single-bit error is detected and corrected in the accessed 16-bit word - no action required from the host controller.
It supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and offers three voltage-range options with corresponding speed grades: 10 ns at 2.2–3.6 V and 4.5–5.5 V, 15 ns at 1.65–2.2 V. The -10 suffix confirms 10 ns access time under specified VCC and temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words) - provides compact, high-bandwidth buffer space for real-time packet buffering or firmware scratchpad. |
| Access Time (tAA) | 10 ns - enables direct interface with 100 MHz bus systems without wait states. |
| ECC Function | Single-bit error correction with ERR output assertion - detects and corrects bit flips in stored data without CPU intervention. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - allows drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V designs. |
| Standby Current (ISB2) | 20 mA typical - ensures low power consumption during idle periods in always-on industrial gateways. |
| Operating Current (ICC) | 90 mA typical at 100 MHz - defines thermal budget for densely packed memory modules. |
| Data Retention Voltage | 1.0 V - maintains stored contents during brown-out events or controlled power-down sequences. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 placement varies by variant (Ball G2 or H6). |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface with TTL-compatible levels; supports byte-wide reads/writes via BHE/ BLE. |
| CE, CE1, CE2 | Chip Enable Controls | Dual CE option (CE1/CE2) enables hierarchical memory mapping; single CE variant uses CE only. |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on rising edge of WE when OE is inactive. |
| OE | Output Enable | Active-low control for data bus tristate; must be asserted for valid read data on I/O lines. |
| BHE / BLE | Byte Enable Inputs | Independent controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) byte writes - essential for mixed-endian or partial-word updates. |
| ERR | Error Indication Output | Open-drain output asserting HIGH during single-bit error correction - requires external pull-up for logic-level compatibility. |
| VCC / VSS | Power / Ground | Dual VCC pins (Balls C1, D1) and multiple VSS balls (A2, E1, F1, H1, H5) ensure low-impedance supply routing and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-accelerated Hamming code generation and checking on every read - eliminates need for software-based error handling overhead. |
| Multi-Voltage Operation | Three discrete VCC ranges supported in one die - simplifies BOM consolidation across product generations with differing power architectures. |
| ERR Pin Assertion | Dedicated open-drain output signals correction event without interrupting ongoing memory access - enables non-intrusive system-level error logging. |
| Low Standby Power | 20 mA ISB2 at full VCC - reduces quiescent power in battery-backed or energy-harvested edge nodes. |
| TTL-Compatible I/O | Direct interface with legacy microcontrollers and FPGAs without level-shifting - preserves signal integrity at 10 ns timing margins. |
Applications
| Avionics Data Recorder | Industrial PLC Memory Module |
|---|---|
Use Scenario: Continuous cyclic recording of flight sensor telemetry with guaranteed data integrity over extended mission durations. IC Role / Device Role / Timing Role: Primary volatile buffer storing timestamped 16-bit ADC samples; ECC prevents corruption from cosmic radiation-induced bit flips. Use Value: Eliminates requirement for periodic memory scrubbing or redundant storage, reducing CPU load and extending flash endurance in the recorder's non-volatile archive layer. |
Use Scenario: Real-time ladder logic execution requiring deterministic read/write latency and immunity to voltage transients on factory floor power rails. IC Role / Device Role / Timing Role: Program/data RAM for safety-critical control firmware; 10 ns tAA ensures scan cycle timing compliance under worst-case bus loading. Use Value: Dual CE support enables seamless bank switching between active program and firmware update partitions without bus contention or timing violations. |
| Telecom Baseband Processor | Medical Imaging Buffer |
Use Scenario: High-throughput packet buffering in LTE/5G remote radio units where bursty traffic demands zero-latency memory access. IC Role / Device Role / Timing Role: Shared memory between DSP core and MAC layer; BHE/ BLE enables efficient header/payload separation without full-word transfers. Use Value: 90 mA ICC at 100 MHz sustains sustained bandwidth while staying within thermal envelope of sealed outdoor enclosures. |
Use Scenario: Temporary storage of raw DICOM image frames during CT/MRI acquisition before compression and archival. IC Role / Device Role / Timing Role: Frame buffer holding 16-bit pixel data; 1.0 V data retention preserves image integrity during brief power interruptions during gantry rotation. Use Value: ERR pin integration allows immediate flagging of corrupted frames for reacquisition - meeting IEC 62304 Class C software safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | No embedded ECC; requires external error-checking logic or software overhead. | Suitable for cost-sensitive applications where single-bit errors are statistically negligible or handled at system level. | Select when ECC is not mandated by safety standards and board space permits additional logic. |
| Micron MT45W8MW16BGX-107 IT:D | DDR2 SDRAM with optional ECC mode; asynchronous interface replaced by clocked command protocol. | Requires memory controller with DDR timing engine; higher bandwidth but greater complexity and power variability. | Choose for throughput >200 MB/s and when system already implements DDR PHY and controller. |
Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-107 IT:D, CY7C1061G-10BVXIT delivers deterministic, hardware-accelerated ECC in a simple parallel interface - reducing design risk in safety-critical systems where predictable latency and minimal software dependency are mandatory.
Availability
CY7C1061G-10BVXIT is available at Aetrix Electronics and suitable for industrial automation, avionics data logging, and telecom infrastructure requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality in harsh operating environments.
Supply support for CY7C1061G-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full CY7Cxxx SRAM portfolio, including industrial-grade reliability testing and long-term product availability commitments.
This device belongs to Infineon's high-reliability parallel SRAM product line, engineered specifically for applications demanding deterministic ECC, multi-voltage compatibility, and extended temperature operation without derating.
FAQ
Does CY7C1061G-10BVXIT perform automatic write-back after ECC correction?
No. The device corrects single-bit errors during read operations and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. System firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the NC pins in the 48-ball VFBGA package?
NC (No Connect) pins - such as Ball A16 and Ball H6 in certain configurations - are physically present but not bonded to the silicon die. They serve mechanical or thermal roles only and must remain unconnected in PCB layout. The datasheet explicitly states "NC pins are not connected internally to the die" and warns against routing traces or applying voltage to them.
Can the ERR pin be left unconnected if ECC reporting is not used?
Yes. The ERR pin is an open-drain output and may be left floating if error indication is not monitored. However, the datasheet recommends leaving it unconnected rather than tying it LOW or to VCC, as improper termination could cause contention or false assertions. No pull-up resistor is required unless the host system needs to detect the ERR signal.
How does the dual CE architecture affect timing during bank selection?
For dual CE devices, CE is defined as the logical AND of CE1 (active-low) and CE2 (active-high). Access occurs only when CE1 = LOW and CE2 = HIGH. This configuration allows hierarchical decoding - e.g., CE1 driven by major address bits and CE2 by chip-select logic - without adding propagation delay beyond standard CE timing parameters (tCE, tCES).
CY7C1061G-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061G-10BVXIT FAQ
1.How can I place an order for CY7C1061G-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G-10BVXIT reliable?
The price and inventory of CY7C1061G-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061G-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G-10BVXIT?
CY7C1061G-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G-10BVXIT?
For technical support, including CY7C1061G-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G-10BVXIT requirements.
6.How does Aetrix verify that CY7C1061G-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061G-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061G-10BVXIT?
All CY7C1061G-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G-10BVXIT part is unused and in its original packaging.
Return procedure for CY7C1061G-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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