Infineon Technologies CY7C1061G-10ZSXI

Overview

CY7C1061G-10ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/Os, and dual chip enable (CE1/CE2). It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time at 5 V, and features an ERR output pin for real-time single-bit error detection and correction. It is used in industrial control systems requiring data integrity under extended temperature operation (–40 °C to +85 °C).

For engineers reviewing the CY7C1061G-10ZSXI datasheet, CY7C1061G-10ZSXI pinout, CY7C1061G-10ZSXI application, or CY7C1061G-10ZSXI equivalent, key selection criteria include ECC support for memory reliability, multi-voltage compatibility, TSOP II package constraints, and dual CE timing behavior in high-availability embedded systems.

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read cycles without external circuitry, using Hamming code with no automatic write-back. The ERR pin asserts high only when a correctable error occurs, enabling system-level fault logging without interrupt overhead.

It supports byte-wide writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and operates with either single CE (pin 29) or dual CE (CE1/CE2) configurations - the -10ZSXI variant uses dual CE and 54-pin TSOP II packaging with ERR functionality enabled.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (22.4 mm × 11.84 mm × 1.0 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G-10ZSXI uniquely combines on-die ECC with multi-voltage operation and hardware ERR signaling-critical for industrial and transportation systems where memory reliability must be guaranteed without software dependency or voltage redesign.

Availability

CY7C1061G-10ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling controllers, medical imaging subsystems, and avionics display units requiring stable component supply across extended temperature and multi-voltage environments.

Supply support for CY7C1061G-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including industrial-grade SRAMs with advanced data integrity features.

CY7C1061G-10ZSXI belongs to the Cypress legacy SRAM product line designed specifically for mission-critical embedded systems demanding ECC, wide temperature operation, and flexible voltage compatibility.

FAQ

Does CY7C1061G-10ZSXI support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles but does not automatically write the corrected data back to memory. System firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts high when a single-bit error is detected and corrected during a read access. If unused, it must be left floating per datasheet Note 6; if monitored, it requires an external pull-up resistor to VCC to establish a valid logic-high level. No internal pull-up is provided.

Can CY7C1061G-10ZSXI operate reliably at 1.8 V?

Yes - it supports 1.65 V to 2.2 V operation with 15 ns access time (tAA), as specified in the Product Portfolio table. At 1.8 V, typical ICC is 70 mA and ISB2 is 20 mA. The -10ZSXI speed grade is rated for 10 ns only at 4.5–5.5 V; 1.8 V operation uses the -15 speed variant.

How does dual chip enable (CE1/CE2) differ from single CE in timing behavior?

CE1 and CE2 form a logical CE: CE is active only when CE1 = LOW and CE2 = HIGH. This enables hierarchical memory decoding - for example, CE1 driven by upper address bits and CE2 by chip-select logic - allowing finer-grained bank selection than single CE. Timing parameters like tCE and tCO are referenced to the CE transition, not individual pins.