Infineon Technologies CY7C1061G-10ZXIT

Overview

CY7C1061G-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability data storage in industrial control and telecom infrastructure. It operates at 10 ns access time, supports 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, and features TTL-compatible I/Os with dedicated ERR output for real-time ECC event indication.

For engineers reviewing the CY7C1061G-10ZXIT datasheet, CY7C1061G-10ZXIT pinout, CY7C1061G-10ZXIT application, or CY7C1061G-10ZXIT equivalent, this device delivers deterministic 10 ns read/write timing, byte-selectable I/O (BHE/ BLE), low 20 mA standby current (ISB2), and dual-chip-enable support - critical for fault-tolerant memory subsystems in programmable logic controllers and baseband processing units.

Technical Context

The CY7C1061G-10ZXIT implements a synchronous SRAM architecture with on-die ECC logic that detects and corrects single-bit errors during read cycles without requiring external circuitry. Its ERR pin asserts high upon correction, enabling system-level error logging and diagnostics.

It supports three distinct V_CC operating windows (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and offers both single-CE and dual-CE (CE1/CE2) configurations. The -10 speed grade guarantees t_AA ≤ 10 ns at V_CC = 5 V and f = 100 MHz, with full compatibility to TTL input thresholds and output drive levels.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (12 × 18.4 × 1 mm), RoHS-compliant, industrial temperature grade (–40 °C to +85 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV102416BLL-10MLI and 23LC1024-I/P, the CY7C1061G-10ZXIT uniquely combines parallel 10 ns timing, multi-voltage support, and on-die ECC - making it the sole option among these three for deterministic, hardware-verified error resilience in real-time memory subsystems.

Availability

CY7C1061G-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom baseband data caches, and medical imaging frame stores requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for industrial and telecom applications demanding deterministic timing, multi-voltage flexibility, and hardware ECC assurance.

FAQ

Does CY7C1061G-10ZXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and signals correction via the ERR pin, but does not automatically rewrite corrected data to the memory array. External logic or firmware must initiate write-back if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the NC pins in the 48-pin TSOP I package?

The NC (No Connect) pins - Pin 10 and Pin 26 in the ZXIT variant - are physically present but not bonded to the silicon die. They must remain unconnected in PCB layout; routing traces or applying voltage to them may cause undefined behavior or damage. This is confirmed in Figures 7–8 and Note 7 of the datasheet.

Can CY7C1061G-10ZXIT operate reliably at 1.65 V with 10 ns access time?

No. At 1.65–2.2 V supply, the device is rated for t_AA = 15 ns (CY7C1061G18 variant); the -10 speed grade applies only to the 2.2–3.6 V and 4.5–5.5 V ranges. Using -10ZXIT at 1.65 V violates timing specifications and risks read/write failures. Refer to Table on Page 2 for voltage/speed mapping.

Is the ERR pin actively driven or open-drain?

The ERR pin is an open-drain output, as stated in Note 8 of the Pin Configurations section. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to assert HIGH during single-bit correction. Leaving it floating or connecting directly to V_CC will prevent proper error signaling.