Infineon Technologies CY7C1061G18-15BV1XI

Overview

CY7C1061G18-15BV1XI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), rated for 15 ns access time, 1.65–2.2 V operation, and industrial temperature range (–40 °C to +85 °C). It features TTL-compatible I/Os, ERR output for error indication, and dual chip enable (CE1/CE2) logic - deployed in mission-critical memory buffers for industrial controllers and avionics data recorders.

For engineers reviewing the CY7C1061G18-15BV1XI datasheet, CY7C1061G18-15BV1XI pinout, CY7C1061G18-15BV1XI application, or CY7C1061G18-15BV1XI equivalent, key selection factors include ECC-enabled reliability at 1.8 V supply, VFBGA-48 package compatibility with high-density PCB layouts, byte-level write control via BHE/BLE, and errata-free read-cycle error reporting without automatic write-back.

Technical Context

This SRAM implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read operations, with ERR pin assertion (high) signaling correction completion. No automatic write-back occurs - corrected data appears only on I/O pins, preserving deterministic timing.

It supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) but the -15BV1XI variant is specifically configured for 1.65–2.2 V operation with 15 ns tAA. Its dual CE architecture (CE1/CE2) enables hierarchical memory banking, while BHE/BLE allow independent upper/lower byte writes to 16-bit words without bus turnaround.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, industrial-grade (I).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-15BLI and 23LC1024-I/P, CY7C1061G18-15BV1XI delivers deterministic hardware ECC correction, 16× higher density than serial alternatives, and 15 ns parallel access - making it uniquely suited for safety-certified, high-throughput memory subsystems where latency, reliability, and density are jointly constrained.

Availability

CY7C1061G18-15BV1XI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics data recorders, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G18-15BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY7C1061G18-15BV1XI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and aerospace applications demanding ECC protection, wide temperature operation, and long-term obsolescence mitigation.

FAQ

Does CY7C1061G18-15BV1XI support automatic error write-back after correction?

No. The device performs single-bit error detection and correction during read cycles and asserts the ERR pin, but corrected data remains only on the I/O bus - it does not automatically rewrite the corrected value back to the memory array. Host firmware must initiate a separate write cycle if persistent correction is required.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that goes high during a read cycle when a single-bit error is detected and corrected. If used for interrupt generation, it requires an external pull-up resistor (typically 4.7 kΩ to VCC). If unused, the pin must be left floating per datasheet Note 6 - tying it to VCC or GND may cause functional failure.

Can CY7C1061G18-15BV1XI operate at 2.5 V?

No. The -15BV1XI suffix specifies the 1.65–2.2 V voltage grade. Operation at 2.5 V falls outside its validated range and violates Absolute Maximum Ratings - it may cause excessive leakage, timing violations, or premature wear. For 2.2–3.6 V operation, select CY7C1061G30-10ZSXI or equivalent.

How does the dual CE architecture affect address decoding in multi-SRAM systems?

CE1 and CE2 form a logical AND: the device activates only when CE1 = LOW and CE2 = HIGH. This allows simple bank selection using one address line driving CE1 and its inverse driving CE2 - eliminating need for discrete AND gates or CPLD logic in 2-bank memory expansions.