Infineon Technologies CY7C1061G18-15BV1XIT

Overview

CY7C1061G18-15BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 15 ns access time, 1.65–2.2 V supply, and featuring TTL-compatible I/Os, ERR output for error indication, and dual chip enable (CE1/CE2) logic. It is used in industrial control systems requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY7C1061G18-15BV1XIT datasheet, CY7C1061G18-15BV1XIT pinout, CY7C1061G18-15BV1XIT application, or CY7C1061G18-15BV1XIT equivalent, this device supports byte-level writes via BHE/ BLE, high-impedance I/O during deselection, and 1.0 V data retention - critical for low-power hold modes in programmable logic controllers and avionics memory buffers.

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read cycles without automatic write-back, signaling correction events via the open-drain ERR pin. Its dual CE architecture (CE1/CE2) enables hierarchical memory mapping in multi-bank systems, while address MSB A19 placement at Ball G2 confirms compatibility with legacy Cypress board layouts.

The device supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) with distinct timing and current profiles; for the -15 variant, t_AA = 15 ns is guaranteed at 1.65–2.2 V, with typical I_CC = 70 mA at 66.7 MHz and I_SB2 = 20 mA in deep standby - enabling use in mixed-voltage industrial backplanes.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 array, 0.5 mm pitch, 1.0 mm height. Pinout conforms to Package/Grade ID BV1XI: single chip enable (CE), ERR output present, address MSB A19 located at Ball G2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-15BLI and MT48LC16M16A2P-75:C, CY7C1061G18-15BV1XIT delivers deterministic zero-refresh access, hardware ECC with dedicated ERR signaling, and industrial-grade voltage/temperature tolerance - making it uniquely suited for safety-critical, latency-constrained embedded memory roles.

Availability

CY7C1061G18-15BV1XIT is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G18-15BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and functional safety.

CY7C1061G18-15BV1XIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems where data corruption resilience, deterministic timing, and industrial temperature operation are mandatory.

FAQ

Does CY7C1061G18-15BV1XIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read cycles but does not perform automatic write-back to memory. Correction occurs internally and is signaled via the ERR pin; the corrected data appears on I/O lines, but the original corrupted word remains unchanged in the array unless explicitly rewritten by the host system.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH during a single-bit error correction event. It must be externally pulled up to V_CC (1.65–2.2 V) with a 4.7 kΩ resistor. When unused, it may be left floating per datasheet Note 6, but active monitoring requires pull-up and connection to an interrupt-capable GPIO.

Can CY7C1061G18-15BV1XIT operate at 1.8 V with 15 ns access time?

Yes. The -15 speed grade is fully specified for t_AA ≤ 15 ns across the entire 1.65–2.2 V V_CC range, including 1.8 V nominal operation. Typical I_CC at 1.8 V/66.7 MHz is 70 mA, and I_SB2 is 20 mA - both guaranteed over –40 °C to +85 °C.

Is the 48-ball VFBGA package (BV1XI) RoHS-compliant and lead-free?

Yes. The BV1XI package designation indicates Pb-free (lead-free) construction per JEDEC J-STD-609, with matte tin surface finish and full compliance to RoHS Directive 2011/65/EU and REACH Regulation EC 1907/2006. No exemptions apply.