Infineon Technologies CY7C1061G18-15BVJXI

Overview

CY7C1061G18-15BVJXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), rated for 15 ns access time at 1.65–2.2 V, operating across industrial temperature (–40 °C to +85 °C), and packaged in a 48-ball VFBGA (6 × 8 × 1.0 mm) with dual chip enable and ERR output. It supports byte-level writes via BHE/ BLE and delivers 90 mA typical active current at 100 MHz.

For engineers reviewing the CY7C1061G18-15BVJXI datasheet, CY7C1061G18-15BVJXI pinout, CY7C1061G18-15BVJXI application, or CY7C1061G18-15BVJXI equivalent, this device is selected for high-reliability embedded memory subsystems requiring deterministic ECC correction, low-voltage operation, and compact footprint in aerospace data loggers, industrial PLCs, and medical imaging buffers where bit-flip resilience is critical.

Technical Context

This SRAM implements a synchronous, TTL-compatible interface with dual CE control logic (CE1 LOW / CE2 HIGH enables access), integrated ECC syndrome generation and correction circuitry that detects and corrects single-bit errors on read without automatic write-back, and an open-drain ERR output asserted HIGH during correction events. The architecture supports independent upper- and lower-byte writes using BHE and BLE signals.

It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), with data retention down to 1.0 V, and features two standby modes: ISB1 (40 mA max, TTL input thresholds) and ISB2 (20 mA typical, CMOS thresholds). Address space spans A0–A19 (1 M words), with I/O0–I/O15 bidirectional data bus and NC pins unconnected internally.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (6 × 8 × 1.0 mm), RoHS-compliant, ball pitch 0.8 mm, package grade ID BVJXI denotes dual chip enable (CE1/CE2), ERR output enabled, and A19 located at ball G2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with CY7C1061G18-15BVJXI, the ISSI part lacks on-die ECC and voltage flexibility, increasing system-level validation burden; the Microchip SPI SRAM trades raw bandwidth and parallel simplicity for footprint reduction - making the CY7C1061G18-15BVJXI optimal for high-reliability, high-throughput embedded systems needing guaranteed bit integrity without architectural compromise.

Availability

CY7C1061G18-15BVJXI is available at Aetrix Electronics and suitable for aerospace data loggers, industrial PLC memory buffers, and medical imaging frame buffers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality across temperature and voltage corners.

Supply support for CY7C1061G18-15BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions with ISO/TS 16949 and AS9100 certified manufacturing.

CY7C1061G18-15BVJXI belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for mission-critical embedded systems demanding deterministic ECC correction, multi-voltage interoperability, and industrial-grade reliability without external error-handling circuitry.

FAQ

Does CY7C1061G18-15BVJXI support automatic error correction write-back?

No. The device performs single-bit error detection and correction during read cycles only, with corrected data presented on the I/O bus. It does not automatically rewrite the corrected data back to the memory array - this must be handled externally if persistent correction is required. The ERR pin signals each correction event, enabling firmware to initiate a write-back if needed.

What is the function of the NC pins in the 48-ball VFBGA package?

The NC (No Connect) pins - including balls C1, D2, G1, and H2 in the BVJXI configuration - are physically present but not bonded to the silicon die. They serve no electrical function and must remain unconnected on the PCB; routing traces or applying solder paste to these balls may cause mechanical stress or unintended shorts and is strictly prohibited per Cypress design guidelines.

Can CY7C1061G18-15BVJXI operate reliably at 1.65 V across its full industrial temperature range?

Yes. The device is fully characterized and guaranteed for tAA ≤ 15 ns, ICC ≤ 110 mA, and ISB2 ≤ 30 mA over –40 °C to +85 °C at VCC = 1.65 V minimum. DC parameters including VOH, VOL, VIH, and VIL meet specification limits at this voltage, confirmed by production test screening per Rev. *T datasheet Section 7.

How is the ERR output electrically configured, and what pull-up value is recommended?

ERR is an open-drain output requiring an external pull-up resistor to VCC. Infineon recommends 4.7 kΩ for standard 1.8 V operation, ensuring rise time < 5 ns while limiting current to < 0.4 mA during assertion. The pin remains high-impedance when inactive and drives LOW only during internal ECC correction - no internal pull-up is present.