Infineon Technologies CY7C1061G18-15BVXI

Overview

CY7C1061G18-15BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 15 ns access time, 1.65–2.2 V supply, and featuring ERR output for real-time error indication. It supports dual chip enable (CE1/CE2), byte-level writes via BHE/BLE, and is packaged in 48-ball VFBGA (6 × 8 × 1.0 mm) for space-constrained industrial memory subsystems.

For engineers reviewing the CY7C1061G18-15BVXI datasheet, CY7C1061G18-15BVXI pinout, CY7C1061G18-15BVXI application, or CY7C1061G18-15BVXI equivalent, this device is selected for high-reliability SRAM applications requiring ECC-enabled data integrity, low standby current (20 mA typical), TTL-compatible I/O, and multi-voltage support across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails.

Technical Context

This SRAM implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles, with ERR pin assertion indicating correction events-no automatic write-back is performed. The device uses asynchronous addressing with CE1/CE2 control logic to define active chip state, and supports independent upper/lower byte writes via BHE and BLE signals tied to I/O8–I/O15 and I/O0–I/O7 respectively.

It operates across three distinct V_CC ranges with corresponding speed grades: 15 ns at 1.65–2.2 V, 10 ns at 2.2–3.6 V and 4.5–5.5 V. Data retention is guaranteed down to 1.0 V, and all I/Os enter high-impedance state when deselected or under disabled control conditions (OE, CE, BHE, BLE).

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 array, 0.5 mm pitch, 1.0 mm height. Pinout conforms to Figure 2 of datasheet Rev. *T: dual chip enable (CE1/CE2), A19 at ball H6, no ERR pin-consistent with CY7C1061G18-15BVXI ordering code BVXI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with CY7C1061G18-15BVXI, IS61WV102416BLL-10MLI lacks on-die ECC and increases system-level validation burden, while MT28EW128ABA1HPC-0SIT trades parallel throughput and low-latency access for serial density and simplified layout-neither matches the 15 ns + hardware ECC + 16-bit bus combination of the CY7C1061G18-15BVXI.

Availability

CY7C1061G18-15BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and test & measurement equipment requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7C1061G18-15BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, emphasizing automotive, industrial, and aerospace-grade components with rigorous qualification and long-term supply commitment.

CY7C1061G18-15BVXI belongs to the Cypress SRAM product line originally designed for mission-critical embedded systems demanding ECC protection, low-power operation, and multi-voltage interoperability in harsh environments.

FAQ

Does CY7C1061G18-15BVXI support automatic error correction write-back?

No. The device performs single-bit error detection and correction during read cycles only, and does not automatically write the corrected data back to the memory array. System firmware must explicitly initiate a write if persistent correction is required. This behavior is documented in Note 1 of the datasheet Rev. *T.

What is the function of the ERR pin on CY7C1061G18-15BVXI?

The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected in the accessed 16-bit word. It remains LOW otherwise. If unused, the pin must be left floating per Note 6 in the datasheet-no pull-up or pull-down is required.

Can CY7C1061G18-15BVXI operate at 2.5 V supply?

Yes. The device supports the 2.2 V to 3.6 V V_CC range, and at 2.5 V it achieves 10 ns access time (CY7C1061G(E)30 speed grade). However, CY7C1061G18-15BVXI is specifically rated for 15 ns operation within the 1.65–2.2 V range; using 2.5 V would require selecting a different speed variant such as CY7C1061GE30-10ZSXI.

Is the 48-ball VFBGA package of CY7C1061G18-15BVXI RoHS compliant?

Yes. The BVXI suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified per JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and rated for reflow peak temperatures up to 260 °C.