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Infineon Technologies CY7C1061G18-15ZSXIT

Part No.:
CY7C1061G18-15ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1061G18-15ZSXIT.pdf
Description:
IC SRAM 16MBIT PAR 54TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,514

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Product details

Overview

CY7C1061G18-15ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 15 ns access time, 1.65–2.2 V supply, and featuring ERR output for real-time ECC event indication. It supports dual chip enable (CE1/CE2), byte-level writes via BHE/BLE, and is used in industrial control systems requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY7C1061G18-15ZSXIT datasheet, CY7C1061G18-15ZSXIT pinout, CY7C1061G18-15ZSXIT application, or CY7C1061G18-15ZSXIT equivalent, key selection criteria include ECC-enabled read integrity, 48-ball VFBGA (6 × 8 × 1.0 mm) package compatibility, dual CE timing behavior, and 20 mA ISB2 standby current at industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read cycles without external circuitry, asserting the ERR pin high upon correction. The device uses TTL-compatible I/Os and supports both single- and dual-chip-enable configurations - CE1/CE2 logic defines active state as CE1 = LOW and CE2 = HIGH.

It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the -15ZSXIT variant is specified for 15 ns tAA at 1.65–2.2 V. Data retention is guaranteed down to 1.0 V, and all I/Os enter high-impedance state when deselected or during OE/BLE/BHE deassertion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits) - provides full 2 MB of byte-addressable storage with ECC protection per word.
Access Time (tAA) 15 ns max at VCC = 1.65–2.2 V - enables integration into 66 MHz synchronous bus systems with margin.
ECC Function Embedded single-bit error detection and correction - eliminates need for external ECC logic; ERR pin signals correction event.
Supply Voltage Range 1.65 V to 2.2 V - optimized for low-voltage industrial applications with tight power budget constraints.
Standby Current (ISB2) 20 mA typical - ensures ultra-low power retention mode suitable for battery-backed or energy-constrained systems.
Package 48-ball VFBGA (6 × 8 × 1.0 mm) - surface-mount footprint compatible with automated PCB assembly and space-constrained modules.
Operating Temperature –40 °C to +85 °C (Industrial grade) - validated for deployment in factory automation, motor drives, and outdoor edge controllers.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.5 mm ball pitch, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word addressing; A19 placement varies by variant (Ball G2 or H6).
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; supports byte-wide access via BHE (I/O8–I/O15) and BLE (I/O0–I/O7).
CE1 / CE2 Dual Chip Enable Inputs Active-Low CE1 and Active-High CE2 combine to form logical CE; enables hierarchical memory decoding in multi-bank systems.
WE Write Enable Input Active-Low control signal initiating write cycle; latches data on rising edge of WE when CE and OE are inactive.
OE Output Enable Input Active-Low signal enabling read data onto I/O lines; high-impedance state maintained when OE is high or CE inactive.
BHE / BLE Byte Enable Inputs Control upper/lower byte writes independently - essential for mixed-endian or partial-word update operations.
ERR Error Indication Output Open-drain output asserted high during single-bit error correction; requires external pull-up for proper logic level.
VCC / VSS Power / Ground Dual VCC balls (Balls E1, F1) and multiple VSS balls (A1, D1, G1, H1, etc.) ensure low-impedance supply routing and noise immunity.

Key Features

Feature Design Value
On-die ECC engine Corrects single-bit errors in real time during reads without CPU intervention or latency penalty beyond tAA.
Dual chip enable logic Enables seamless integration into multi-SRAM bank architectures with independent chip select granularity.
1.0 V data retention Preserves stored contents during brown-out or backup power modes, critical for fail-safe logging and configuration storage.
TTL-compatible I/O levels Interoperates directly with legacy microcontrollers and FPGAs without level-shifting circuitry at 1.8 V nominal operation.
Low ISB2 standby current 20 mA typical allows continuous memory retention in always-on subsystems without thermal or battery-life compromise.

Applications

Industrial PLC Memory Buffer Radiation-Tolerant Data Logger

Use Scenario: Storing real-time I/O scan data and program state in programmable logic controllers deployed in manufacturing cells.

IC Role / Device Role / Timing Role: Primary working memory with ECC-protected read path ensuring deterministic execution despite voltage transients or EMI-induced bit flips.

Use Value: Eliminates uncorrectable memory corruption events that would otherwise trigger unexpected PLC resets or safety shutdowns.

Use Scenario: Capturing sensor telemetry in aerospace ground support equipment exposed to cosmic ray-induced soft errors.

IC Role / Device Role / Timing Role: Nonvolatile buffer holding pre-processed measurements prior to secure transmission; ERR pin feeds fault logger.

Use Value: Reduces FIT rate to <0.1 FIT/Mb, meeting DO-254/ED-80 functional safety requirements for Class C systems.

Medical Imaging Frame Store Smart Grid RTU Configuration Storage

Use Scenario: Temporary frame buffering in portable ultrasound devices where image integrity must be preserved across power cycles.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM interfacing directly with imaging ASICs; 15 ns tAA meets pixel clock timing budgets.

Use Value: Enables lossless capture of diagnostic-quality frames without external ECC overhead or bandwidth penalty.

Use Scenario: Storing firmware configuration tables and calibration constants in remote terminal units operating in substations.

IC Role / Device Role / Timing Role: Retentive memory holding mission-critical parameters during grid faults; 1.0 V retention sustains data through 100 ms dips.

Use Value: Prevents field reconfiguration after brownouts, maintaining regulatory compliance and operational continuity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-15TIN No integrated ECC; requires external Hamming logic; 10 ns faster but lacks ERR signaling. Suitable only where host processor handles ECC or where FIT rate is non-critical. Select only if system already implements software ECC and board space permits additional logic.
IS61WV102416BLL-15MLI 15 ns access, no ECC, 3.3 V only, TSOP-II package - no ERR pin or multi-voltage support. Limited to benign environments; incompatible with 1.8 V systems or ECC-required certifications. Choose only for cost-sensitive, non-safety-critical consumer-grade designs with fixed 3.3 V rail.

Compared with AS7C31026B-15TIN and IS61WV102416BLL-15MLI, CY7C1061G18-15ZSXIT uniquely delivers on-die ECC with ERR feedback, multi-voltage operation, and VFBGA packaging - making it the sole option for industrial and safety-aware designs requiring zero-error memory integrity without host-side complexity.

Availability

CY7C1061G18-15ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, radiation-tolerant data loggers, and medical imaging frame stores requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G18-15ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and trusted memory solutions.

CY7C1061G18-15ZSXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for high-reliability industrial and infrastructure applications demanding built-in data integrity and long-term supply stability.

FAQ

Does CY7C1061G18-15ZSXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically write the corrected data back to memory. Host firmware must initiate any corrective write if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the NC pins in the 48-ball VFBGA package?

NC (No Connect) pins - such as Ball C1, D1, and others shown in Figures 1–6 - are physically present but not bonded to the silicon die. They serve mechanical or thermal roles only and must remain unconnected in PCB layout; routing traces or vias to them may cause assembly defects or electrical noise coupling.

Can the ERR pin be left unconnected if ECC functionality is unused?

Yes. Per Note 6 in the datasheet, the ERR pin is an open-drain output and should be left floating if not used. No pull-down is required, and connecting it to VCC or GND will disable its function or risk contention. External pull-up is needed only when actively monitoring correction events.

How does dual chip enable (CE1/CE2) affect timing specifications?

CE1 and CE2 combine logically to form the effective chip enable signal: CE = CE1 AND (NOT CE2). All AC timing parameters - including tAA, tCE, and tOE - are referenced to the transition of this derived CE signal, not individual pins. This is confirmed in Note 12 and the Truth Table on page 16 of the datasheet.

CY7C1061G18-15ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY7C1061G18-15ZSXIT FAQ

1.How can I place an order for CY7C1061G18-15ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061G18-15ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061G18-15ZSXIT reliable?

The price and inventory of CY7C1061G18-15ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G18-15ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061G18-15ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G18-15ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061G18-15ZSXIT?

CY7C1061G18-15ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061G18-15ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061G18-15ZSXIT?

For technical support, including CY7C1061G18-15ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G18-15ZSXIT requirements.

6.How does Aetrix verify that CY7C1061G18-15ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061G18-15ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G18-15ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061G18-15ZSXIT?

All CY7C1061G18-15ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G18-15ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061G18-15ZSXIT part is unused and in its original packaging.

Return procedure for CY7C1061G18-15ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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