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Infineon Technologies CY7C1061G30-10BV1XE
- Part No.:
- CY7C1061G30-10BV1XE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061G30-10BV1XE.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,938
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Product details
Overview
CY7C1061G30-10BV1XE from Cypress Semiconductor is an automotive-grade 16-Mbit (1 M × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over –40 °C to +125 °C, supporting 2.2 V–3.6 V supply and TTL-compatible I/O for safety-critical memory subsystems in engine control units.
For engineers reviewing the CY7C1061G30-10BV1XE datasheet, CY7C1061G30-10BV1XE pinout, CY7C1061G30-10BV1XE application, or CY7C1061G30-10BV1XE equivalent, key selection considerations include ECC-enabled data integrity, dual-byte write control (BHE/ BLE), 48-ball VFBGA packaging, and ISB2 = 20 mA standby current under automotive thermal stress.
Technical Context
The CY7C1061G30-10BV1XE implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back. Its address space spans A0–A19 (20-bit), supporting full 16-bit parallel I/O (I/O0–I/O15) with independent byte enable control via BHE (upper byte) and BLE (lower byte).
It uses TTL-compatible input thresholds and drives outputs to VOH ≥ 2.4 V (VCC ≥ 3.0 V) and VOL ≤ 0.4 V, with CE-driven power-down modes yielding ISB2 = 20 mA typical and 1.0-V data retention capability. The device supports asynchronous read/write with tRC = tAA = 10 ns and operates across 2.2 V–3.6 V with no internal voltage regulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1 M words × 16 bits) - supports full-word or byte-accessed storage for ECU firmware buffers and real-time sensor history. |
| Access Time (tAA) | 10 ns - enables direct interface with 100 MHz microcontrollers without wait states in automotive timing-critical paths. |
| ECC Function | Single-bit error correction per 16-bit word - provides hardware-level data integrity for ASIL-B compliant systems without software overhead. |
| Supply Voltage | 2.2 V to 3.6 V - compatible with wide-range automotive power rails including post-regulated 2.5 V and 3.3 V domains. |
| Standby Current (ISB2) | 20 mA typical - ensures low-power sleep mode operation while maintaining full memory state in stop/start engine cycles. |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade) - qualified for under-hood deployment in transmission control modules and ADAS domain controllers. |
| Data Retention Voltage | 1.0 V - allows memory contents to persist during brown-out conditions below functional VCC minimum. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word decoding; A18/A19 used for bank selection in extended configurations. |
| I/O0–I/O7 | Lower Byte Data I/O | Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when deselected or BLE HIGH. |
| I/O8–I/O15 | Upper Byte Data I/O | Bi-directional 8-bit data path enabled only when BHE = LOW; isolated from lower byte for independent byte writes. |
| CE | Chip Enable | Active-LOW global enable; asserts internal power-up sequence (tPU = 0 ns) and enters ISB2 mode when HIGH and inputs stable. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and BHE/ BLE are also LOW; tPWE = 7 ns minimum pulse width. |
| OE | Output Enable | Active-LOW output gate; controls data bus drive (tDOE = 5 ns) and high-Z transition (tHZOE = 5 ns) independent of CE state. |
| BHE / BLE | Byte Enable Controls | Independent active-LOW enables for upper/lower byte; allow mixed-width accesses without external glue logic. |
| VCC / VSS | Power / Ground | Dual VCC pins (balls A16, G1) and dual VSS pins (balls D1, H6) reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-based single-bit error detection and correction per 16-bit word - eliminates need for external ECC controllers in safety-critical firmware storage. |
| Dual-Byte Write Architecture | Separate BHE and BLE inputs enable concurrent or independent 8-bit writes to upper/lower bytes - reduces bus arbitration overhead in multi-threaded ECU tasks. |
| Low-Power Standby Mode | ISB2 = 20 mA typical at max VCC and 0 Hz - extends battery life during vehicle sleep mode while preserving full memory image. |
| 1.0-V Data Retention | Retains valid data down to 1.0 V supply - sustains memory state through cold-cranking voltage sag (< 2.0 V) without backup capacitor. |
| TTL-Compatible I/O | VIH = 2.0 V min, VOL = 0.4 V max - interoperates directly with legacy 5-V-tolerant microcontrollers and level-shifting peripherals. |
Applications
| Engine Control Unit (ECU) | Transmission Control Module (TCM) |
|---|---|
|
Use Scenario: Storing real-time combustion timing maps and knock sensor history with fault tolerance. IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC for volatile calibration data accessed at 10 ns latency during closed-loop fuel injection cycles. Use Value: Prevents undetected memory corruption in ASIL-B diagnostic routines by correcting single-bit errors before firmware reads calibration values. |
Use Scenario: Holding gear-shift decision tables and torque converter slip history in harsh under-transmission environments. IC Role / Device Role / Timing Role: Automotive-E grade SRAM providing deterministic 10 ns read access and 1.0 V data retention during cranking-induced voltage dips. Use Value: Ensures uninterrupted shift logic execution despite repeated 12 V battery sags below 2.2 V, eliminating need for external retention capacitors. |
| Advanced Driver Assistance Systems (ADAS) Domain Controller | Body Control Module (BCM) |
|
Use Scenario: Caching radar pre-processing results and camera frame metadata prior to fusion algorithm execution. IC Role / Device Role / Timing Role: Low-latency, ECC-protected SRAM interfacing directly with ARM Cortex-R5F cores running real-time OS kernels. Use Value: Enables deterministic memory access within 10 ns deadlines while meeting ISO 26262 SEooC requirements for latent fault coverage. |
Use Scenario: Maintaining door lock status, lighting sequences, and LIN gateway message buffers across ignition cycles. IC Role / Device Role / Timing Role: Dual-voltage SRAM (2.2–3.6 V) supporting both 2.5 V MCU domains and 3.3 V CAN transceivers in centralized body electronics. Use Value: Reduces BOM count by eliminating separate voltage translators and simplifies PCB layout with unified power domain routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; requires external error handling; 10 ns access, same density and voltage range. | Lacks hardware-level ASIL-B compliance; suitable for non-safety-critical infotainment buffers. | Select when ECC is managed in software or system-level redundancy suffices. |
| AS6C1008-10TIN | Commercial temperature range (0 °C to +70 °C); no automotive qualification; identical 10 ns speed and 16-bit bus. | Not qualified for under-hood use; limited to cabin-mounted modules with controlled thermal environments. | Choose only for cost-sensitive non-automotive industrial applications where AEC-Q100 is not required. |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, the CY7C1061G30-10BV1XE uniquely delivers integrated ECC, automotive-E temperature support, and 1.0-V data retention-enabling single-chip compliance with ISO 26262 memory safety requirements without external circuitry.
Availability
CY7C1061G30-10BV1XE is available at Aetrix Electronics and suitable for engine control units, transmission control modules, ADAS domain controllers, and body control modules requiring stable component supply across automotive production lifecycles.
Supply support for CY7C1061G30-10BV1XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with headquarters in San Jose, CA.
The CY7C1061G product line delivers automotive-qualified SRAMs with embedded ECC and extended temperature operation, specifically engineered for functional safety-critical memory subsystems in powertrain and chassis control systems.
FAQ
Does CY7C1061G30-10BV1XE support automatic error correction during write operations?
No. The embedded ECC logic corrects single-bit errors only during read cycles. It does not perform automatic write-back or error correction on write paths. Error detection occurs on read data, and corrected data is presented to the bus; no internal memory update is triggered.
What is the maximum clock frequency supported for synchronous interface timing?
The CY7C1061G30-10BV1XE is an asynchronous SRAM and does not use a clock signal. Its timing is governed by setup/hold relationships between CE, OE, WE, and address transitions. Maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 MHz random access rates without external clocking.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW enables full 16-bit data transfer on I/O0–I/O15 during a single write cycle. This configuration matches standard 16-bit bus operation and is electrically identical to asserting CE and WE alone without byte masking.
Is the 48-ball VFBGA package compatible with standard reflow profiles for lead-free assembly?
Yes. The CY7C1061G30-10BV1XE in 48-ball VFBGA uses Pb-free solder balls and is qualified for JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles with peak temperatures up to 260 °C are supported, and the package meets IPC-7351B footprint standards.
CY7C1061G30-10BV1XE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061G30-10BV1XE FAQ
1.How can I place an order for CY7C1061G30-10BV1XE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BV1XE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10BV1XE reliable?
The price and inventory of CY7C1061G30-10BV1XE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BV1XE is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10BV1XE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BV1XE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10BV1XE?
CY7C1061G30-10BV1XE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10BV1XE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10BV1XE?
For technical support, including CY7C1061G30-10BV1XE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BV1XE requirements.
6.How does Aetrix verify that CY7C1061G30-10BV1XE is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10BV1XE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BV1XE meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10BV1XE?
All CY7C1061G30-10BV1XE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BV1XE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10BV1XE part is unused and in its original packaging.
Return procedure for CY7C1061G30-10BV1XE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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