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Infineon Technologies CY7C1061G30-10BV1XET
- Part No.:
- CY7C1061G30-10BV1XET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061G30-10BV1XET.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,352
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Product details
Overview
CY7C1061G30-10BV1XET from Cypress Semiconductor is an automotive-grade 16-Mbit (1 M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over –40 °C to +125 °C, supporting 2.2–3.6 V supply and TTL-compatible I/O for high-reliability memory subsystems in engine control units and ADAS domain controllers.
For engineers reviewing the CY7C1061G30-10BV1XET datasheet, CY7C1061G30-10BV1XET pinout, CY7C1061G30-10BV1XET application, or CY7C1061G30-10BV1XET equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature compliance, byte-select write capability via BHE/ BLE, and dual-package availability in 48-ball VFBGA and 48-pin TSOP I.
Technical Context
This SRAM implements a synchronous, address-decoded memory array with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors during read cycles-without automatic write-back. It uses TTL-compatible input thresholds and supports CMOS-level timing margins across its full voltage and temperature range.
Control is managed through independent chip enable (CE), output enable (OE), write enable (WE), and byte enable (BHE/ BLE) signals, enabling full-word, upper-byte, or lower-byte accesses. All I/Os enter high-impedance state when CE is HIGH or OE/BHE/ BLE are deasserted, ensuring clean bus isolation in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1 M words × 16 bits) - supports 2 MB of wide-data storage for real-time firmware or sensor buffers |
| Access time (tAA) | 10 ns - enables direct interface with 100 MHz microcontrollers without wait states |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade) - qualified for under-hood and safety-critical ECUs |
| ECC capability | Single-bit error detection and correction per 16-bit word - improves system-level FIT rate without external logic |
| Supply voltage | 2.2 V to 3.6 V - compatible with modern low-voltage automotive power rails and LDO outputs |
| Standby current (ISB2) | 20 mA typical - enables low-power retention mode during vehicle sleep states |
| Data retention voltage | 1.0 V - maintains memory contents during brown-out or battery backup scenarios |
Pinout & Package
Package: 48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting full 1 M-word addressing; A18/A19 used for bank selection in extended configurations |
| I/O0–I/O15 | Bidirectional data lines | 16-bit parallel data path; high-impedance when CE/OE/BHE/ BLE inactive for bus sharing |
| CE | Chip enable | Active-low global select; device enters low-power ISB2 mode when HIGH |
| OE | Output enable | Active-low read strobe; controls output drivers independently of CE for multiplexed bus timing |
| WE | Write enable | Active-low write strobe; initiates write cycle only when CE and BHE/ BLE are also asserted |
| BHE, BLE | Byte enable controls | BHE enables I/O8–I/O15 (upper byte); BLE enables I/O0–I/O7 (lower byte); both required for full-word writes |
| VCC, VSS | Power and ground | Dual VCC pins and multiple VSS balls reduce IR drop and improve noise immunity in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Corrects single-bit errors on every read without CPU intervention or additional latency penalty |
| Automotive qualification | Qualified to AEC-Q100 Grade 1 (–40 °C to +125 °C) with full thermal cycling and HTOL validation |
| Low-power standby mode | ISB2 = 20 mA typical allows sustained data retention during vehicle ignition-off periods |
| TTL-compatible I/O | Supports legacy microcontroller interfaces without level-shifting circuitry or timing recalibration |
| Byte-select write architecture | Independent BHE/ BLE control enables efficient partial-word updates common in CAN message buffering and register shadowing |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of calibrated fuel maps, knock sensor history, and diagnostic trouble codes during active combustion cycles. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory interfaced directly to 32-bit RISC core with no external parity logic. Use Value: Prevents silent data corruption in safety-critical calibration tables, eliminating risk of erroneous torque delivery or misfire detection. | Use Scenario: Buffering radar point-cloud data from 77 GHz sensors before fusion with camera streams in autonomous driving domain controllers. IC Role / Device Role / Timing Role: Low-latency, byte-accessible frame buffer supporting concurrent read (fusion engine) and write (sensor interface) operations. Use Value: Enables deterministic 10 ns read access while maintaining ECC integrity across multi-sensor data streams under thermal stress. |
| Body Control Module (BCM) | Electric Power Steering (EPS) |
Use Scenario: Storing seat/mirror position profiles, lighting configuration states, and LIN gateway message queues across vehicle power cycles. IC Role / Device Role / Timing Role: Retention-capable SRAM holding nonvolatile user preferences with 1.0 V data hold capability during battery disconnect. Use Value: Eliminates need for external EEPROM wear-leveling or backup capacitors in cost-sensitive body electronics. | Use Scenario: Holding torque compensation lookup tables and motor phase current histories for closed-loop steering assist algorithms. IC Role / Device Role / Timing Role: Automotive-grade SRAM with ECC ensuring integrity of real-time torque calculation parameters against alpha particle upsets. Use Value: Meets ASIL-B functional safety requirements for memory integrity without requiring redundant memory controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No integrated ECC; requires external error handling; 10 ns access, same density and voltage range | Suitable for non-safety-critical infotainment modules where ECC is not mandated | Select when cost sensitivity outweighs functional safety requirements and system-level ECC can be implemented in software |
| MT28EW128ABA1HPC-0SIT | Quad SPI NOR Flash with internal ECC; 128 Mbit density; sequential read optimized, not random-access SRAM | Used for firmware storage rather than runtime data buffering; lacks byte-write capability and low-latency random access | Choose only for code storage applications; not a functional replacement for SRAM-based data buffers or scratchpads |
Compared with IS61WV102416BLL-10MLI and MT28EW128ABA1HPC-0SIT, the CY7C1061G30-10BV1XET uniquely delivers on-chip ECC correction with true SRAM timing, making it the only viable option for ASIL-B compliant runtime memory in powertrain and chassis control domains.
Availability
CY7C1061G30-10BV1XET is available at Aetrix Electronics and suitable for engine control units, advanced driver assistance systems, and electric power steering modules requiring stable component supply across automotive production lifecycles.
Supply support for CY7C1061G30-10BV1XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor, now part of Infineon Technologies, designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with deep expertise in memory, PSoC, and USB-C controller technologies.
The CY7C1061G product line delivers automotive-qualified SRAMs with integrated ECC specifically for safety-critical electronic control units where data integrity must be guaranteed without software overhead or external logic.
FAQ
Does CY7C1061G30-10BV1XET support automatic error correction during write operations?
No. The ECC logic corrects single-bit errors only during read cycles. Write operations store raw data without on-the-fly encoding or verification. Error detection occurs upon subsequent reads, and corrected data is returned to the host-but no automatic write-back or scrubbing is performed. This design minimizes write latency and avoids unintended memory state changes.
What is the maximum clock frequency supported by CY7C1061G30-10BV1XET?
The device does not use a clock signal; it is an asynchronous SRAM. Its 10 ns access time (tAA) supports reliable interfacing with microcontrollers running up to 100 MHz, assuming proper setup/hold timing for address and control signals. AC timing parameters such as tRC (10 ns) define minimum cycle times for consecutive accesses.
Can CY7C1061G30-10BV1XET operate at 1.8 V?
No. The absolute minimum supply voltage is 2.2 V, as specified in the Operating Range table. Operation below 2.2 V violates the device's DC electrical characteristics and may result in data corruption, timing violations, or failure to enter or exit data retention mode correctly. It is not rated for 1.8 V logic families.
Is the 48-ball VFBGA package of CY7C1061G30-10BV1XET compatible with standard reflow profiles?
Yes. The part is qualified for Pb-free reflow per JEDEC J-STD-020D, with peak temperature up to 260 °C and time above liquidus (TAL) of 60–150 seconds. Thermal resistance values (θJA = 31.5 °C/W) confirm suitability for automotive PCB layouts with four-layer boards and standard thermal vias under the VFBGA footprint.
CY7C1061G30-10BV1XET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061G30-10BV1XET FAQ
1.How can I place an order for CY7C1061G30-10BV1XET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BV1XET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10BV1XET reliable?
The price and inventory of CY7C1061G30-10BV1XET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BV1XET is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10BV1XET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BV1XET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10BV1XET?
CY7C1061G30-10BV1XET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10BV1XET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10BV1XET?
For technical support, including CY7C1061G30-10BV1XET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BV1XET requirements.
6.How does Aetrix verify that CY7C1061G30-10BV1XET is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10BV1XET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BV1XET meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10BV1XET?
All CY7C1061G30-10BV1XET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BV1XET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10BV1XET part is unused and in its original packaging.
Return procedure for CY7C1061G30-10BV1XET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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