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Infineon Technologies CY7C1061G30-10BV1XI

Part No.:
CY7C1061G30-10BV1XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061G30-10BV1XI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:146

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Product details

Overview

CY7C1061G30-10BV1XI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It supports industrial temperature range (–40 °C to +85 °C) and is used in mission-critical memory subsystems requiring data integrity.

For engineers reviewing the CY7C1061G30-10BV1XI datasheet, CY7C1061G30-10BV1XI pinout, CY7C1061G30-10BV1XI application, or CY7C1061G30-10BV1XI equivalent, this page delivers verified technical context, package-specific pin mapping, ECC implementation details, industrial-grade power behavior, and validated alternative SRAM options with documented functional distinctions.

Technical Context

This device implements on-die Hamming-code-based ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high upon correction, enabling system-level fault logging and recovery coordination.

It supports both single CE (CE only) and dual CE (CE1/CE2) configurations, with byte-enable control (BHE/ BLE) for 8-bit sub-word writes and reads. Address space spans A0–A19 (1 M words), and I/O lines I/O0–I/O15 are bidirectional with high-impedance tri-state control via CE/OE/BHE/BLE.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 × 16-bit words) - provides full 16-bit parallel data bus interface without external width expansion.
Access Time (tAA) 10 ns at 2.2–3.6 V - enables direct interfacing with 100 MHz synchronous controllers without wait states.
ECC Function Embedded single-bit error detection and correction per read cycle - eliminates need for external ECC logic or software overhead.
Supply Voltage Range 2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails; supports mixed-voltage board designs.
Active Current (ICC) 90 mA typical at 100 MHz - defines thermal budget for sustained burst reads in real-time control applications.
Standby Current (ISB2) 20 mA typical - ensures low-power retention mode during processor sleep while preserving full memory content.
Data Retention Voltage 1.0 V minimum - allows graceful degradation to ultra-low-power hold mode during brown-out conditions.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, industrial-grade (–40 °C to +85 °C).

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting 1M-word addressing; A19 placed at ball G2 per BV1XI configuration.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel data path; high-impedance when CE/OE/BHE/BLE inactive - prevents bus contention.
CE Chip Enable (Single CE variant) Active-low enable controlling entire memory array access; assertion required for read/write initiation.
WE Write Enable Active-low signal qualifying write cycles; latches data on rising edge of WE when CE and OE are asserted.
OE Output Enable Active-low control for output drivers; enables read data onto I/O bus only when CE and OE both low.
BHE / BLE Byte High/Low Enable Independent 8-bit write masking: BHE enables I/O8–I/O15; BLE enables I/O0–I/O7 - supports mixed-width transfers.
ERR Error Indication Output Open-drain active-high output signaling successful single-bit correction during last read - requires external pull-up.
VCC / VSS Power / Ground Dual VCC balls (balls E6, F6) and dual VSS balls (balls D1, E1) reduce IR drop and improve noise immunity.

Key Features

Feature Design Value
On-die ECC engine Hardware-accelerated Hamming-code correction eliminates CPU intervention and latency penalty for error recovery.
TTL-compatible I/O levels Supports direct interface with legacy 5 V-tolerant microcontrollers and FPGAs without level-shifting circuitry.
Multiple voltage support Three independent VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow reuse across 1.8 V, 2.5 V, 3.3 V, and 5 V platforms.
Industrial temperature grade Rated for –40 °C to +85 °C operation - qualified for use in transportation control units, PLCs, and outdoor telecom equipment.
Low-power standby mode 20 mA ISB2 current enables extended battery-backed operation in safety-critical black-box recorders and flight data systems.

Applications

Avionics Data Recorders Railway Signaling Controllers

Use Scenario: Continuous capture of flight parameter telemetry with guaranteed data integrity under EMI-rich cockpit environments.

IC Role / Device Role / Timing Role: Primary non-volatile buffer memory with real-time ECC correction ensuring bit-accurate replay of critical sensor logs.

Use Value: Eliminates post-flight data scrubbing and enables deterministic timestamp alignment between corrected and uncorrected frames.

Use Scenario: Storing interlocking logic state tables in EN 5012x-certified signaling cabinets exposed to rail-side vibration and thermal cycling.

IC Role / Device Role / Timing Role: Fault-tolerant program memory holding safety-critical route validation rules accessed by SIL-4-certified processors.

Use Value: Reduces system-level FIT rate below 0.1 FIT/Mb, satisfying IEC 61508 hardware fault tolerance requirements.

Medical Imaging Frame Buffers Industrial CNC Motion Controllers

Use Scenario: Temporary storage of raw DICOM pixel streams during CT/MRI scan acquisition where bit corruption could misdiagnose tissue boundaries.

IC Role / Device Role / Timing Role: High-bandwidth 16-bit-wide frame buffer synchronized to ADC sampling clocks with sub-10 ns access timing.

Use Value: Prevents false-positive tumor detection by ensuring pixel-level fidelity across multi-gigabyte volumetric datasets.

Use Scenario: Holding real-time trajectory interpolation tables and servo feedback history in closed-loop motion systems requiring deterministic jitter-free memory access.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for FPGA-based motion engines executing 10 kHz position update loops.

Use Value: Enables consistent 10 ns tAA timing across voltage and temperature - critical for sub-micron positioning repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-10TIN No embedded ECC; requires external error-handling logic or software mitigation. Suitable for cost-sensitive industrial HMI where single-bit errors are acceptable or handled at application layer. Select when ECC is not mandated by safety standard and BOM cost is primary constraint.
IS61WV102416BLL-10MLI 10 ns access at 3.3 V only; no multi-voltage support; no ERR pin; lower ISB2 (15 mA typical). Preferred for compact 3.3 V-only designs where footprint and standby power outweigh ECC requirement. Choose when system operates exclusively at 3.3 V and ECC is managed externally or omitted.

Compared with CY7C1061G30-10BV1XI, AS7C31026B-10TIN lacks hardware ECC and increases system-level verification burden, while IS61WV102416BLL-10MLI trades voltage flexibility and error visibility for marginally lower standby current - making the CY7C1061G30-10BV1XI optimal for safety-critical, multi-rail, or field-deployed systems demanding autonomous error resolution.

Availability

CY7C1061G30-10BV1XI is available at Aetrix Electronics and suitable for avionics data recorders, railway signaling controllers, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G30-10BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial, transportation, and medical systems where data integrity, multi-voltage compatibility, and long-term supply assurance are mandatory.

FAQ

Does CY7C1061G30-10BV1XI support automatic error correction write-back?

No. The device performs single-bit error correction during read operations and signals correction via the ERR pin, but does not automatically rewrite corrected data back to the memory cell. System firmware must implement write-back if persistent correction is required - this avoids unintended write wear during transient errors.

What is the function of the NC pins in the 48-ball VFBGA package?

NC (No Connect) pins - such as balls C1, D2, F1, and H1 in the BV1XI configuration - are physically present but not bonded to the die. They must remain unconnected on the PCB; routing traces or applying solder paste to these balls may cause mechanical stress or shorting risks during reflow.

Can the ERR pin be left unconnected if ECC functionality is unused?

Yes. The ERR pin is an open-drain output and may be left floating if error reporting is not implemented. However, for noise immunity in high-EMI environments, a weak pull-up resistor (e.g., 10 kΩ to VCC) is recommended even when unused - no internal pull-up exists.

How does the dual CE architecture affect timing behavior compared to single CE mode?

In dual CE mode (CE1/CE2), effective chip enable is the logical AND of CE1 (active-low) and CE2 (active-high); timing parameters like tCE and tAA are identical to single CE mode when the combined CE signal meets setup/hold requirements. No timing penalty occurs - only pin assignment differs.

CY7C1061G30-10BV1XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061G30-10BV1XI FAQ

1.How can I place an order for CY7C1061G30-10BV1XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BV1XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061G30-10BV1XI reliable?

The price and inventory of CY7C1061G30-10BV1XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BV1XI is usually 5 days.

3.What payment methods are accepted for CY7C1061G30-10BV1XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BV1XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061G30-10BV1XI?

CY7C1061G30-10BV1XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061G30-10BV1XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061G30-10BV1XI?

For technical support, including CY7C1061G30-10BV1XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BV1XI requirements.

6.How does Aetrix verify that CY7C1061G30-10BV1XI is sourced from the original manufacturer or authorized distributors?

All CY7C1061G30-10BV1XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BV1XI meets industry standards.

7.What is the process for return or replacement of CY7C1061G30-10BV1XI?

All CY7C1061G30-10BV1XI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BV1XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061G30-10BV1XI part is unused and in its original packaging.

Return procedure for CY7C1061G30-10BV1XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1061G30-10BV1XI Tags

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