Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1061G30-10BV1XIT

Part No.:
CY7C1061G30-10BV1XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061G30-10BV1XIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1061G30-10BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and low standby current (20 mA typical). It is used in industrial control systems requiring data integrity under radiation-prone or long-term operation conditions.

For engineers reviewing the CY7C1061G30-10BV1XIT datasheet, CY7C1061G30-10BV1XIT pinout, CY7C1061G30-10BV1XIT application, or CY7C1061G30-10BV1XIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, dual CE support, byte-enable write control, and real-world timing and power parameters per Rev. *T datasheet.

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read cycles without automatic write-back, signaling correction events via the dedicated ERR output pin. Its architecture supports both single and dual chip enable configurations, with BHE/ BLE enabling independent upper/lower byte writes to the 16-bit data bus.

The device operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the -30 suffix denotes the 2.2–3.6 V range and 10 ns tAA, while the BV1XIT suffix confirms the 48-ball VFBGA package with single CE and A19 at ball G2, including ERR functionality.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits): supports full-word parallel access for microcontroller or FPGA-based memory buffers.
Access Time (tAA) 10 ns at 2.2–3.6 V: enables direct interfacing with 100 MHz synchronous controllers without wait states.
ECC Function Single-bit error detection and correction per read cycle, signaled by ERR pin assertion - no software overhead required.
Supply Voltage Range 2.2 V to 3.6 V: compatible with modern low-voltage industrial MCUs and FPGAs, reducing system-level power conversion complexity.
Standby Current (ISB2) 20 mA typical: ensures low-power retention in always-on subsystems such as watchdog memory or configuration storage.
Data Retention 1.0 V minimum: allows extended hold mode during brown-out or controlled power-down without data loss.
I/O Interface TTL-compatible inputs/outputs: eliminates level-shifting requirements when interfacing with legacy or mixed-voltage logic families.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word addressing; A19 located at ball G2 per BV1XIT configuration.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; high-impedance when deselected or during write cycles with WE active.
CE Chip Enable (Single CE variant) Active-low enable: device enters standby (ISB2) when HIGH; no CE1/CE2 logic required.
WE Write Enable Active-low control: initiates write cycle; latches data on rising edge of WE when CE and OE are asserted appropriately.
OE Output Enable Active-low control: enables output drivers only during read cycles; disables outputs to prevent bus contention.
BHE / BLE Byte High/Low Enable Independent 8-bit write control: BHE enables I/O8–I/O15; BLE enables I/O0–I/O7 - supports partial-word updates.
ERR Error Indication Output Open-drain output asserted HIGH during single-bit ECC correction; requires external pull-up for proper logic level.
VCC / VSS Power / Ground Dual VCC balls (balls E1, H1) and dual VSS balls (balls D1, G1) minimize IR drop and improve noise immunity.

Key Features

Feature Design Value
Embedded ECC logic Hardware-accelerated single-bit error correction per read access - eliminates need for external ECC controller or software overhead.
Multi-voltage operation Supports 2.2–3.6 V range with guaranteed 10 ns tAA - simplifies integration into mixed-supply industrial platforms.
Low-power standby mode 20 mA typical ISB2 at max VCC - enables energy-efficient retention in battery-backed or intermittent-power applications.
Byte-selectable writes BHE/ BLE pins allow independent 8-bit writes without masking or read-modify-write sequences - improves firmware efficiency.
TTL-compatible I/O Meets VIH/VIL thresholds across full VCC range - interoperable with 3.3 V and 5 V logic without level shifters.

Applications

Industrial PLC Memory Buffer Medical Imaging Frame Store

Use Scenario: Storing real-time I/O status and control registers in programmable logic controllers exposed to electromagnetic interference.

IC Role / Device Role / Timing Role: Primary non-refreshing data buffer with ECC protection against bit flips induced by EMI or alpha particles.

Use Value: Prevents silent data corruption in safety-critical control loops; ERR pin enables diagnostic logging without CPU intervention.

Use Scenario: Holding uncompressed image frames during acquisition in portable ultrasound or X-ray systems.

IC Role / Device Role / Timing Role: High-speed frame buffer interfaced directly to image sensor controller and display processor.

Use Value: 10 ns access time supports real-time pixel streaming; 16-bit bus width matches common image data paths.

Aerospace Avionics Configuration Storage Test Equipment Pattern Memory

Use Scenario: Retaining flight-critical configuration tables and calibration coefficients in airborne computing modules.

IC Role / Device Role / Timing Role: Radiation-tolerant configuration memory with 1.0 V data retention for safe power-loss recovery.

Use Value: SER FIT rate <0.1 FIT/Mb ensures ultra-high reliability over mission lifetime; VFBGA package resists mechanical shock.

Use Scenario: Storing test vectors and expected response patterns in automated circuit testers (ATE).

IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to tester clock with minimal jitter dependency.

Use Value: Dual CE and byte-enable support enables rapid vector loading and selective update - reduces test cycle time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31025B-10TIN No integrated ECC; requires external logic or software for error handling; 10 ns access at 3.3 V only. Lacks hardware-level error reporting; unsuitable where autonomous fault detection is required. Select only if ECC is implemented externally and board space permits additional logic.
IS61WV102416BLL-10MLI 10 ns access, 1.8 V–3.6 V range, no ECC; lower standby current (15 µA) but no error signaling. Optimized for ultra-low-power sleep modes, not for data integrity assurance. Prefer for battery-powered devices where ECC is unnecessary and retention current dominates design priority.

Compared with AS7C31025B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G30-10BV1XIT uniquely delivers on-chip ECC with ERR output - eliminating external error-handling logic while maintaining 10 ns performance and industrial temperature support.

Availability

CY7C1061G30-10BV1XIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, aerospace avionics configuration storage, and ATE pattern memory requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1061G30-10BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its SRAM portfolio with full technical and supply chain continuity, including legacy Cypress products like the CY7C1061 series.

This device belongs to Infineon's industrial-grade parallel SRAM product line, designed specifically for high-reliability applications demanding deterministic timing, ECC-assisted data integrity, and multi-voltage flexibility in harsh environments.

FAQ

Does CY7C1061G30-10BV1XIT support automatic error correction write-back?

No. The device performs single-bit error detection and correction during read cycles only, and does not automatically write corrected data back to the memory array. The ERR pin signals correction occurrence, but software or external logic must decide whether to initiate a write if persistent correction is required.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH when a single-bit error is detected and corrected during a read access. It must be externally pulled up to VCC with a 4.7 kΩ resistor to ensure valid logic levels; leaving it floating may cause undefined behavior or false interrupts.

Can CY7C1061G30-10BV1XIT operate at 1.8 V?

No. The "30" in the part number specifies the 2.2 V–3.6 V operating range. While some 1.8 V–3.6 V SRAMs exist in the CY7C1061 family (e.g., -18 variants), this specific part is characterized and guaranteed only from 2.2 V minimum - operation below that violates datasheet specifications.

Is the 48-ball VFBGA (BV1XIT) pinout compatible with standard PCB footprints for CY7C1061G devices?

Yes. The BV1XIT package uses the same 6 × 8 mm VFBGA footprint as other CY7C1061G variants in the BVx series, including identical ball pitch (0.8 mm) and pad layout. Mechanical compatibility is confirmed in Infineon's Package Diagrams (Document 001-81540, Page 20).

CY7C1061G30-10BV1XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061G30-10BV1XIT FAQ

1.How can I place an order for CY7C1061G30-10BV1XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061G30-10BV1XIT reliable?

The price and inventory of CY7C1061G30-10BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BV1XIT is usually 5 days.

3.What payment methods are accepted for CY7C1061G30-10BV1XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BV1XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061G30-10BV1XIT?

CY7C1061G30-10BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061G30-10BV1XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061G30-10BV1XIT?

For technical support, including CY7C1061G30-10BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BV1XIT requirements.

6.How does Aetrix verify that CY7C1061G30-10BV1XIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061G30-10BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BV1XIT meets industry standards.

7.What is the process for return or replacement of CY7C1061G30-10BV1XIT?

All CY7C1061G30-10BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BV1XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061G30-10BV1XIT part is unused and in its original packaging.

Return procedure for CY7C1061G30-10BV1XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1061G30-10BV1XIT Tags

  • CY7C1061G30-10BV1XIT
  • CY7C1061G30-10BV1XIT PDF
  • CY7C1061G30-10BV1XIT Datasheet
  • CY7C1061G30-10BV1XIT Specifications
  • CY7C1061G30-10BV1XIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1061G30-10BV1XIT
  • Buy CY7C1061G30-10BV1XIT
  • CY7C1061G30-10BV1XIT Price
  • CY7C1061G30-10BV1XIT Distributor
  • CY7C1061G30-10BV1XIT Supplier
  • CY7C1061G30-10BV1XIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER