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Infineon Technologies CY7C1061G30-10BVJXI

Part No.:
CY7C1061G30-10BVJXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061G30-10BVJXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:458

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Product details

Overview

CY7C1061G30-10BVJXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring ERR output for real-time error indication, and packaged in 48-ball VFBGA (6 × 8 × 1.0 mm) with dual chip enable (CE1/CE2) and A19 at ball G2.

For engineers reviewing the CY7C1061G30-10BVJXI datasheet, CY7C1061G30-10BVJXI pinout, CY7C1061G30-10BVJXI application, or CY7C1061G30-10BVJXI equivalent, this device serves as a high-reliability SRAM solution for industrial control, avionics data buffers, medical imaging subsystems, and telecom baseband memory where ECC-enabled data integrity and low standby current (20 mA typical) are critical.

Technical Context

The CY7C1061G30-10BVJXI implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without requiring external circuitry or write-back support. Its dual CE architecture (CE1/CE2) enables hierarchical memory enable control in multi-bank systems, while BHE/BLE pins allow byte-level writes to upper or lower 8-bit lanes independently.

It supports three voltage ranges - 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - with this specific variant rated for 2.2–3.6 V operation at 10 ns tAA. The ERR pin asserts high only when a correctable single-bit error is detected and corrected, providing deterministic fault signaling without interrupt latency overhead.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits); provides full 16-bit parallel interface for microprocessor or FPGA data bus coupling.
Access Time (tAA) 10 ns max at VCC = 2.2–3.6 V; enables direct interfacing with 100 MHz synchronous controllers without wait states.
ECC Function Embedded single-bit error detection and correction per read cycle; no external logic or software intervention required.
Supply Voltage Range 2.2 V to 3.6 V; compatible with modern low-voltage I/O domains including 2.5 V and 3.3 V systems.
Standby Current (ISB2) 20 mA typical at VCC = 3 V, TA = 25 °C; supports low-power retention modes in battery-backed or energy-constrained applications.
Data Retention 1.0 V minimum VCC for data retention; allows ultra-low-power hold mode during system sleep with minimal leakage.
Package 48-ball VFBGA (6 × 8 × 1.0 mm), RoHS-compliant; supports high-density PCB layouts with fine-pitch routing and thermal efficiency.

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 array, 0.5 mm pitch, 1.0 mm height, JEDEC MO-276 compliant. Pinout corresponds to dual chip enable configuration with ERR output and address MSB A19 located at ball G2.

Pin/Terminal Circuit Role Design Meaning
CE1 / CE2 Dual chip enable inputs Logical AND gate: device enabled only when CE1 = LOW and CE2 = HIGH; enables selective bank activation in multi-SRAM systems.
ERR Error indication output Open-drain active-HIGH signal asserted only during successful single-bit correction; requires external pull-up for proper logic level.
BHE / BLE Byte high/low enable inputs Control write masking: BHE enables I/O8–I/O15; BLE enables I/O0–I/O7; supports 8-bit sub-word writes without data bus splitting.
A0–A19 Address inputs 20-bit address bus supporting full 1M-word addressing; A19 placed at ball G2 per BVJXI package definition.
I/O0–I/O15 Bi-directional data bus 16-bit parallel interface with TTL-compatible drive strength; all pins enter high-Z when CE inactive or OE/BLE/BHE deasserted.

Key Features

Feature Design Value
On-die ECC engine Corrects single-bit errors in real time during read cycles without CPU intervention or memory controller modification.
Dual CE architecture Enables hierarchical memory enable schemes - e.g., CE1 driven by FPGA bank select, CE2 by system clock domain enable.
ERR output signaling Provides hardware-observable fault event flag; simplifies diagnostic logging and failsafe response in safety-critical firmware.
VFBGA thermal profile Low junction-to-board thermal resistance (θJB ≈ 35 °C/W) supports sustained 100 MHz operation in enclosed industrial enclosures.
Multi-voltage compatibility Single part number supports 2.5 V and 3.3 V I/O domains via same footprint - reduces BOM variants in mixed-voltage designs.

Applications

Avionics Data Buffer Medical Imaging Frame Store

Use Scenario: Real-time buffering of sensor telemetry packets in flight control computers where bit flips from cosmic radiation must be mitigated.

IC Role / Device Role / Timing Role: Primary SRAM buffer with ECC protection between ADC interface and ARM Cortex-R5 processor.

Use Value: Eliminates need for external ECC logic or software checksum overhead, reducing latency by >120 ns per 16-bit word read.

Use Scenario: Storing uncompressed DICOM image frames during CT scan acquisition before compression and transmission.

IC Role / Device Role / Timing Role: High-speed frame buffer interfaced to Xilinx Zynq-7000 FPGA with AXI HP port.

Use Value: 10 ns access time ensures zero-wait-state transfers at 100 MHz; ECC prevents corrupted pixel data from propagating to diagnosis pipeline.

Industrial PLC Program Memory Telecom Baseband Memory

Use Scenario: Holding ladder logic program code and I/O state tables in DIN-rail mounted programmable logic controllers exposed to EMI-rich factory floors.

IC Role / Device Role / Timing Role: Nonvolatile-equivalent working memory backed by supercapacitor; retains data at 1.0 V during brownout.

Use Value: ISB2 = 20 mA typical enables >72-hour retention on 0.47 F supercapacitor at 3.0 V, meeting IEC 61131-2 power-fail requirements.

Use Scenario: Storing FFT coefficients and channel estimation data in LTE small-cell baseband processors operating in temperature-cycled outdoor cabinets.

IC Role / Device Role / Timing Role: Dual-port-accessible SRAM used for ping-pong buffering between DSP cores and RF transceivers.

Use Value: VFBGA package withstands –40 °C to +85 °C thermal cycling; SER FIT rate <0.1 FIT/Mb ensures <1 uncorrectable error per 10⁹ hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-10TIN No integrated ECC; requires external Hamming encoder/decoder or FPGA logic for correction. Suitable only where ECC is implemented at system level or not required; lacks ERR pin for hardware fault reporting. Select when cost sensitivity outweighs reliability requirements and board space permits external ECC logic.
IS61WV102416BLL-10MLI 10 ns access but no ECC; 3.3 V only; TSOP-II package (22.4 × 11.84 mm) vs. VFBGA (6 × 8 mm). Used in legacy telecom line cards where board area is unconstrained and ECC handled by host processor. Choose for drop-in replacement in existing TSOP-based designs lacking ECC needs; not suitable for new safety-critical designs.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G30-10BVJXI uniquely delivers integrated ECC with hardware ERR signaling in a space-optimized VFBGA, eliminating design complexity and enabling deterministic fault handling in real-time systems.

Availability

CY7C1061G30-10BVJXI is available at Aetrix Electronics and suitable for avionics data buffers, medical imaging frame stores, and industrial PLC program memory requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY7C1061G30-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for mission-critical industrial, aerospace, and medical systems demanding embedded ECC, multi-voltage operation, and extended temperature support.

FAQ

Does CY7C1061G30-10BVJXI support automatic error correction during write operations?

No. The device performs single-bit error detection and correction only during read cycles. It does not implement automatic write-back or scrubbing; correction is applied to the read data path only, and the original memory location remains unmodified unless explicitly rewritten by the host system.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that drives HIGH only when a correctable single-bit error is detected and corrected during a read access. It must be externally pulled up to VCC via a 4.7 kΩ resistor; leaving it floating or tying it directly to VCC may cause false assertions or contention.

Can CY7C1061G30-10BVJXI operate reliably at 1.8 V?

No. This variant (G30 suffix) is specified only for 2.2 V–3.6 V operation. For 1.65 V–2.2 V operation, the CY7C1061G18-15BVJXI variant must be used; attempting 1.8 V operation on the G30 part violates its absolute maximum ratings and may result in undefined behavior or data corruption.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The BVJXI suffix denotes a lead-free, halogen-free, RoHS-compliant 48-ball VFBGA package conforming to JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), with peak reflow temperature rating of 260 °C.

CY7C1061G30-10BVJXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061G30-10BVJXI FAQ

1.How can I place an order for CY7C1061G30-10BVJXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BVJXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061G30-10BVJXI reliable?

The price and inventory of CY7C1061G30-10BVJXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BVJXI is usually 5 days.

3.What payment methods are accepted for CY7C1061G30-10BVJXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BVJXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061G30-10BVJXI?

CY7C1061G30-10BVJXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061G30-10BVJXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061G30-10BVJXI?

For technical support, including CY7C1061G30-10BVJXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BVJXI requirements.

6.How does Aetrix verify that CY7C1061G30-10BVJXI is sourced from the original manufacturer or authorized distributors?

All CY7C1061G30-10BVJXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BVJXI meets industry standards.

7.What is the process for return or replacement of CY7C1061G30-10BVJXI?

All CY7C1061G30-10BVJXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BVJXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061G30-10BVJXI part is unused and in its original packaging.

Return procedure for CY7C1061G30-10BVJXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1061G30-10BVJXI Tags

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