Infineon Technologies CY7C1061G30-10BVJXIT

Overview

CY7C1061G30-10BVJXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), rated for 10 ns access time at 2.2–3.6 V supply, supporting industrial temperature range (–40 °C to +85 °C), and packaged in 48-ball VFBGA (6 × 8 × 1.0 mm). It features dual chip enable (CE1/CE2), ERR output pin for real-time ECC event indication, and TTL-compatible I/Os - deployed in mission-critical memory subsystems requiring data integrity assurance.

For engineers reviewing the CY7C1061G30-10BVJXIT datasheet, CY7C1061G30-10BVJXIT pinout, CY7C1061G30-10BVJXIT application, or CY7C1061G30-10BVJXIT equivalent, key selection considerations include its 10 ns tAA timing at 3.0 V, dual CE architecture, ERR signal behavior during read cycles, and compatibility with legacy SRAM controllers in avionics, medical imaging buffers, and industrial PLC firmware storage.

Technical Context

This device implements a synchronous, byte-selectable SRAM core with on-die ECC logic that detects and corrects single-bit errors in real time during read operations - without automatic write-back. The ERR pin asserts high only when correction occurs, enabling external fault logging without interrupt overhead.

It supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); this specific variant operates in the 2.2–3.6 V band with guaranteed 10 ns access. Dual CE inputs (CE1/CE2) provide hierarchical chip select control, while BHE/BLE enable independent upper/lower byte writes to the 16-bit data bus.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, Pb-free. Pinout corresponds to dual chip enable (CE1/CE2) configuration with ERR output and A19 address MSB located at ball G2 (Package/Grade ID: BVJXI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT48LC16M16A2P-6A:G, CY7C1061G30-10BVJXIT delivers hardware-accelerated, transparent ECC correction with zero software overhead and native SRAM timing - essential for deterministic real-time systems where latency predictability and fault traceability are non-negotiable.

Availability

CY7C1061G30-10BVJXIT is available at Aetrix Electronics and suitable for avionics flight control memory, medical imaging frame buffers, and industrial PLC firmware storage requiring stable component supply, long-term lifecycle support, and documented ECC reliability metrics.

Supply support for CY7C1061G30-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.

This device belongs to the CY7C1061G/E family of ECC-enhanced SRAMs designed specifically for safety-critical embedded systems where data integrity, deterministic timing, and extended temperature operation are mandatory.

FAQ

Does CY7C1061G30-10BVJXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. External logic or firmware must initiate a write cycle if persistent correction is required - a design choice to avoid unintended write interference in safety-critical contexts.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that goes HIGH for one clock cycle whenever a single-bit error is detected and corrected during a read operation. It should be pulled up to VCC via a 4.7 kΩ resistor and connected to an interrupt input or status register bit. If unused, it must be left floating per datasheet guidance - not tied HIGH or LOW.

Can CY7C1061G30-10BVJXIT operate at 1.8 V?

No. This variant (suffix "30") is specified for the 2.2 V to 3.6 V supply range only. For 1.65–2.2 V operation, the CY7C1061G18 variant must be selected. Attempting 1.8 V operation on the "30" part violates the guaranteed 10 ns timing spec and may result in data corruption or functional failure.

How does the dual CE architecture improve system design?

CE1 and CE2 allow hierarchical memory enable control: CE1 LOW + CE2 HIGH activates the device, while CE1 HIGH or CE2 LOW disables it. This enables clean partitioning of memory space across multiple devices using minimal address decode logic - reducing gate count in FPGA-based systems and eliminating contention risks in multi-master buses.