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Infineon Technologies CY7C1061G30-10BVXI
- Part No.:
- CY7C1061G30-10BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061G30-10BVXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:598
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Product details
Overview
CY7C1061G30-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring ERR output for real-time error indication, TTL-compatible I/Os, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It serves in industrial control memory buffers requiring data integrity under EMI-prone conditions.
For engineers reviewing the CY7C1061G30-10BVXI datasheet, CY7C1061G30-10BVXI pinout, CY7C1061G30-10BVXI application, or CY7C1061G30-10BVXI equivalent, this page delivers verified package mapping (BVXI = dual CE, ERR-enabled, A19 at Ball H6), ECC functional behavior, byte-enable timing constraints, and supply-voltage–dependent current specs critical for power budgeting and signal integrity validation.
Technical Context
This SRAM implements full-cycle ECC on every read operation: single-bit errors in the accessed 16-bit word are detected and corrected in hardware without CPU intervention, and signaled via the open-drain ERR output (active-high). The device supports both single and dual chip enable configurations - CY7C1061G30-10BVXI uses dual CE (CE1/CE2) with ERR enabled and address MSB A19 assigned to Ball H6 per VFBGA pinout.
It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" in the part number denotes the 2.2–3.6 V range, and "10" specifies 10 ns tAA. Byte write control is implemented via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7), enabling precise 8-bit updates without read-modify-write overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits): provides 2 MB of fast, non-refreshed storage for real-time firmware stacks or sensor buffers. |
| Access Time (tAA) | 10 ns at VCC = 2.2–3.6 V: enables direct interfacing with 100 MHz bus clocks without wait states. |
| ECC Function | Hardware single-bit error correction + detection per 16-bit word, with ERR pin assertion: eliminates need for software ECC layers in safety-critical reads. |
| Supply Voltage Range | 2.2 V to 3.6 V: compatible with 2.5 V and 3.3 V system rails; supports mixed-voltage board designs without level shifters. |
| Active Current (ICC) | 90 mA typical at 100 MHz: defines peak power draw for thermal modeling in dense PCB layouts. |
| Standby Current (ISB2) | 20 mA typical: sets minimum quiescent power during idle cycles in always-on industrial nodes. |
| Data Retention | 1.0 V minimum retention voltage: allows graceful degradation during brown-out events while preserving memory contents. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, moisture sensitivity level 3. Pin configuration corresponds to CY7C1061GE variant with dual chip enable (CE1/CE2), ERR output enabled, and address MSB A19 located at Ball H6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE1 / CE2 | Dual chip enable inputs | Device selected only when CE1 = LOW and CE2 = HIGH; enables hierarchical memory decoding in multi-SRAM systems. |
| WE | Write enable input | Active-low control: initiates write cycle when address and data are stable; synchronizes with BHE/ BLE for byte granularity. |
| OE | Output enable input | Active-low control: enables I/O pins as outputs during read; high-Z state prevents bus contention when deselected. |
| BHE / BLE | Byte high/low enable inputs | Independent 8-bit write masking: BHE controls I/O8–I/O15; BLE controls I/O0–I/O7; no internal gating delay between enables and data. |
| ERR | Error indication output | Open-drain, active-high pulse asserted during read if single-bit error is corrected; requires external pull-up for logic-level compatibility. |
| A0–A19 | Address inputs | 20-bit address bus (A19 at Ball H6): supports full 1M-word addressing; A19 placement matches legacy Cypress and third-party pinouts. |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface with TTL-compatible thresholds: simplifies connection to FPGA I/O banks or microcontroller data buses. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Corrects one bit per 16-bit word on every read - no CPU overhead, no latency penalty beyond tAA, and no external logic required. |
| Voltage-flexible operation | Single device supports 2.2–3.6 V rails, eliminating BOM splits for 2.5 V vs. 3.3 V systems and reducing qualification effort. |
| Low-power standby mode | ISB2 = 20 mA typical ensures <100 mW standby dissipation at 3.3 V - critical for fanless industrial enclosures. |
| Byte-select write architecture | Independent BHE/ BLE control enables atomic 8-bit writes without read-modify-write sequences, improving real-time logging efficiency. |
| ERR output signaling | Dedicated open-drain ERR pin provides immediate hardware notification of corrected errors - enables diagnostic logging or fail-safe state transitions. |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and motion control command queues in programmable logic controllers operating in electrically noisy factory environments. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory interfaced directly to ARM Cortex-M7 bus; handles burst writes from ADC sequencers and deterministic reads by motion scheduler. Use Value: Prevents silent data corruption in control loops caused by alpha particles or EMI-induced bit flips - maintaining SIL-2 functional safety compliance without software ECC overhead. |
Use Scenario: Temporary frame buffering in portable ultrasound devices where image data must be preserved during brief power interruptions or battery switchover. IC Role / Device Role / Timing Role: Low-latency, 10 ns-access memory holding 1–2 uncompressed B-mode frames (1024 × 768 × 16-bit) before GPU processing. Use Value: 1.0 V data retention capability maintains frame integrity during 50-ms brown-out events, avoiding image loss or reacquisition delays in clinical use. |
| Railway Signaling Logic Memory | Avionics Sensor Fusion Cache |
|
Use Scenario: Holding interlocking logic state tables and route validation checksums in EN 5012x-certified trackside controllers exposed to wide temperature swings (–40 °C to +85 °C). IC Role / Device Role / Timing Role: Industrial-grade SRAM with extended temp support and ECC used as configuration memory for FPGA-based safety processors. Use Value: SER FIT rate <0.1 FIT/Mb ensures less than one uncorrectable error per billion device-hours - meeting IEC 62425 reliability targets for fail-safe subsystems. |
Use Scenario: Caching inertial measurement unit (IMU) and GNSS timestamp-aligned samples in UAV flight controllers prior to Kalman filter execution. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory feeding sensor fusion algorithms running on dual-core Cortex-R5F with lockstep checking. Use Value: Hardware ECC eliminates need for redundant memory copies or periodic scrubbing - reducing memory bandwidth pressure and CPU load in resource-constrained avionics SoCs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | No integrated ECC; requires external error detection logic or software layer; 10 ns access, 2.5 V only; 48-pin TSOP I package. | Lacks hardware error correction - unsuitable for safety-critical or high-reliability contexts where silent corruption is unacceptable. | Select only when cost sensitivity outweighs reliability requirements and system-level ECC can be implemented in firmware. |
| Microchip 23LC1024-I/P | Serial SPI interface (not parallel); 1 Mbit density (1/16th capacity); no ECC; 5V-tolerant I/O; DIP-8 package. | Serial architecture introduces latency and bandwidth limitations - incompatible with high-throughput parallel bus architectures. | Consider only for low-pin-count, space-constrained designs where memory bandwidth <10 MB/s is acceptable and ECC is not required. |
Compared with IS61WV102416BLL-10MLI and 23LC1024-I/P, CY7C1061G30-10BVXI uniquely delivers parallel-interface speed, full 16-Mbit density, and autonomous hardware ECC in a single VFBGA package - making it the only option that satisfies simultaneous requirements for throughput, capacity, and fault containment in industrial safety systems.
Availability
CY7C1061G30-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics sensor fusion modules requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.
Supply support for CY7C1061G30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY7C1061G30-10BVXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems demanding deterministic timing, radiation-tolerant data storage, and hardware-accelerated error resilience without software dependency.
FAQ
Does CY7C1061G30-10BVXI support automatic error correction write-back?
No. The device performs single-bit error correction during read operations only and does not automatically write the corrected data back to the memory array. The corrected value appears on the I/O bus, but the original corrupted word remains unchanged in the array until explicitly rewritten by the host system. This behavior is documented in Note 1 of the datasheet and avoids unintended write cycles during diagnostic reads.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that asserts high (requires external pull-up resistor) whenever a single-bit error is detected and corrected during a read cycle. It remains inactive (high-impedance) otherwise. Infineon recommends connecting a 4.7 kΩ pull-up to VCC and routing ERR to an interrupt-capable GPIO for real-time error logging. Leaving ERR floating is permissible but forfeits error visibility.
Can CY7C1061G30-10BVXI operate reliably at 2.2 V minimum supply?
Yes. The "30" suffix confirms qualification for the 2.2 V–3.6 V range, and all AC/DC specifications - including 10 ns tAA, 90 mA ICC, and 20 mA ISB2 - are guaranteed across this full range. At 2.2 V, VOH is specified ≥2.0 V (IOH = –1.0 mA), ensuring robust noise margins with standard 2.5 V logic families.
How does the dual CE architecture affect memory decoding in multi-SRAM systems?
CE1 and CE2 form a logical AND gate: the device activates only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding - e.g., using higher-order address bits to drive CE2 across multiple SRAMs while sharing CE1 globally - enabling clean 2^n address partitioning without external logic gates or timing skew concerns.
CY7C1061G30-10BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061G30-10BVXI FAQ
1.How can I place an order for CY7C1061G30-10BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10BVXI reliable?
The price and inventory of CY7C1061G30-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BVXI is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10BVXI?
CY7C1061G30-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10BVXI?
For technical support, including CY7C1061G30-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BVXI requirements.
6.How does Aetrix verify that CY7C1061G30-10BVXI is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BVXI meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10BVXI?
All CY7C1061G30-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10BVXI part is unused and in its original packaging.
Return procedure for CY7C1061G30-10BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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