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Infineon Technologies CY7C1061G30-10BVXIT
- Part No.:
- CY7C1061G30-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061G30-10BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,615
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Product details
Overview
CY7C1061G30-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring ERR output pin for real-time error indication, TTL-compatible I/Os, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It targets high-reliability industrial memory subsystems requiring data integrity in avionics control units and medical imaging buffers.
For engineers reviewing the CY7C1061G30-10BVXIT datasheet, CY7C1061G30-10BVXIT pinout, CY7C1061G30-10BVXIT application, or CY7C1061G30-10BVXIT equivalent, key selection criteria include ECC-enabled read reliability, dual-chip-enable support for bank isolation, 20 mA ISB2 standby current, and VFBGA thermal performance in space-constrained embedded controllers.
Technical Context
This SRAM implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without external circuitry; correction occurs transparently with no latency penalty beyond tAA. The ERR pin asserts high only when a correctable error is found, enabling system-level logging without interrupt overhead.
It supports both single-CE (CE) and dual-CE (CE1/CE2) addressing modes, with CE1/CE2 logic defined as active-low/high combination to enable chip select arbitration in multi-device memory banks; byte enables (BHE/BLE) allow independent upper/lower 8-bit writes aligned to 16-bit word boundaries.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); provides full 2 MB of byte-addressable storage with ECC protection per 16-bit word. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V; guarantees deterministic read latency for real-time control loops running at ≤100 MHz bus clock. |
| ECC Function | Embedded Hamming-code single-bit error correction with ERR output assertion; no external logic or firmware overhead required. |
| Supply Voltage Range | 2.2 V–3.6 V; compatible with modern low-voltage microcontroller I/O domains and eliminates level-shifting in 3.3 V systems. |
| Standby Current (ISB2) | 20 mA typical at VCC = 3 V, TA = 25 °C; enables power-sensitive applications like portable diagnostic equipment with extended idle periods. |
| Package | 48-ball VFBGA (6 × 8 × 1.0 mm, 0.8 mm pitch); supports high-density PCB layouts and improved thermal dissipation vs. TSOP alternatives. |
| Data Retention | 1.0 V minimum retention voltage; maintains stored data during brown-out conditions down to ultra-low VCC without refresh. |
Pinout & Package
48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 array, 0.8 mm pitch, 6 mm × 8 mm footprint, 1.0 mm height. Pinout corresponds to CY7C1061GE variant with dual chip enable (CE1/CE2) and ERR output, A19 at ball G2 (Package Grade ID: BVXIT).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE1, CE2 | Dual chip enable inputs | Enable memory access only when CE1 = LOW and CE2 = HIGH; allows independent bank selection in multi-SRAM configurations. |
| WE | Write enable input | Active-low signal initiating write cycle; latches address and data on falling edge for synchronous write timing. |
| OE | Output enable input | Controls tri-state output drivers; deassertion places I/O0–I/O15 in high-impedance state to prevent bus contention. |
| BLE, BHE | Byte low/high enable inputs | Selectively write lower (I/O0–I/O7) or upper (I/O8–I/O15) byte; enables 8-bit peripheral interfacing without data masking logic. |
| ERR | Error indication output | Open-drain output asserted HIGH during successful single-bit correction; requires external pull-up for system monitoring. |
| A0–A19 | Address inputs | 20-bit address bus supporting full 1M-word addressing; A19 placed at ball G2 per BVXIT configuration. |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface with TTL-compatible thresholds; supports burst reads/writes in legacy controller designs. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | On-die Hamming-code engine corrects single-bit errors in real time with zero software intervention or latency penalty. |
| Dual chip enable architecture | CE1/CE2 pairing enables hierarchical memory mapping and reduces address decoding complexity in multi-bank systems. |
| Multi-voltage operation | Supports 2.2–3.6 V range with guaranteed 10 ns tAA, simplifying integration into mixed-voltage SoC platforms. |
| VFBGA thermal profile | 1.0 mm package height and fine-pitch balls improve heat transfer to PCB ground planes in fanless enclosures. |
| ERR output signaling | Dedicated open-drain pin provides hardware-level error notification for fault-tolerant system logging or fail-safe shutdown. |
Applications
| Avionics Flight Control Memory | Medical MRI Image Buffer |
|---|---|
|
Use Scenario: Stores real-time sensor fusion data and actuator command history in fly-by-wire ECUs where bit corruption could compromise flight safety. IC Role / Device Role / Timing Role: Primary working memory with ECC-enforced data integrity; operates at 10 ns tAA to meet DO-254 deterministic timing budgets. Use Value: Eliminates need for external ECC logic or periodic memory scrubbing, reducing BOM count and validation effort for certified airborne systems. |
Use Scenario: Buffers raw k-space data during MRI scan acquisition before FFT processing, where transient radiation-induced upsets risk image artifacts. IC Role / Device Role / Timing Role: High-bandwidth 16-bit parallel buffer interfaced to FPGA DMA engines; ERR pin triggers reacquisition on detected errors. Use Value: Achieves SER FIT rate <0.1 FIT/Mb, directly supporting IEC 62304 Class C software safety requirements for diagnostic imaging. |
| Industrial PLC Program Storage | Railway Signaling Logic Memory |
|
Use Scenario: Holds ladder logic program code and I/O state tables in DIN-rail mounted PLCs exposed to EMI-rich factory environments. IC Role / Device Role / Timing Role: Nonvolatile-equivalent program memory with 1.0 V data retention; accessed via microcontroller's external bus interface. Use Value: Maintains program integrity during voltage sags or switching transients, preventing uncontrolled machine motion during brownouts. |
Use Scenario: Stores interlocking logic tables and train position history in wayside signaling controllers deployed along electrified rail corridors. IC Role / Device Role / Timing Role: Safety-critical memory node in SIL-4 compliant systems; ERR output feeds watchdog supervisor for automatic failover. Use Value: Enables compliance with EN 50129 Annex C by providing hardware-level error detection/correction traceable to failure mode analysis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-10TIN | No embedded ECC; requires external syndrome generator and correction logic; 10 ns tAA at 3.3 V only. | Lacks hardware error reporting; increases FPGA resource usage and validation scope for safety-critical use. | Select only if system already implements external ECC and board layout cannot accommodate VFBGA. |
| IS61WV102416BLL-10MLI | 10 ns tAA at 2.5 V ±10%; no ERR pin; uses 44-pin TSOP II; ISB2 = 25 mA typical. | Higher standby current and larger footprint limit suitability in thermally constrained or battery-backed modules. | Prefer for cost-sensitive industrial HMIs where ECC logging is handled at firmware layer. |
Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G30-10BVXIT uniquely delivers integrated ECC with dedicated ERR signaling in a compact VFBGA, reducing system-level complexity and qualification burden for functional safety applications.
Availability
CY7C1061G30-10BVXIT is available at Aetrix Electronics and suitable for avionics flight control memory, medical MRI image buffering, and industrial PLC program storage requiring stable component supply across extended product lifecycles.
Supply support for CY7C1061G30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full CY7C1061G/E product family as part of its industrial and automotive memory portfolio.
This device belongs to Infineon's high-reliability SRAM product line, designed specifically for mission-critical applications demanding hardware-based ECC, multi-voltage flexibility, and long-term industrial temperature support (–40 °C to +85 °C).
FAQ
Does CY7C1061G30-10BVXIT support automatic error correction without CPU intervention?
Yes. The device performs single-bit error correction entirely within the SRAM die using embedded Hamming-code logic. Correction occurs transparently during read cycles, and the ERR pin signals completion-no firmware polling, interrupt handling, or external logic is required. This is confirmed in the Functional Description section (page 1) and Truth Table (page 16) of datasheet 001-81540 Rev. *T.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that asserts HIGH when a single-bit error is detected and corrected during a read cycle. As stated in Note 6 on page 5, it must be externally pulled up to VCC via a 4.7 kΩ resistor. If unused, the pin may be left floating-but leaving it unconnected forfeits error visibility, compromising system-level fault detection capability.
Can CY7C1061G30-10BVXIT operate at 1.8 V supply?
No. This variant (G30-10) is rated for 2.2 V–3.6 V operation only. While earlier CY7C1061G18 variants support 1.65 V–2.2 V, the "30" in the part number explicitly denotes the 2.2–3.6 V voltage grade per the Product Portfolio table on page 2. Operating below 2.2 V violates absolute maximum ratings and risks data retention failure or ECC malfunction.
Is the 48-ball VFBGA package lead-free and RoHS-compliant?
Yes. The "XIT" suffix in CY7C1061G30-10BVXIT indicates Pb-free (lead-free) construction and RoHS-6 compliance, as defined in the Ordering Information section (page 17) of datasheet 001-81540 Rev. *T. The package uses matte tin surface finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.
CY7C1061G30-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061G30-10BVXIT FAQ
1.How can I place an order for CY7C1061G30-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10BVXIT reliable?
The price and inventory of CY7C1061G30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10BVXIT?
CY7C1061G30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10BVXIT?
For technical support, including CY7C1061G30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10BVXIT requirements.
6.How does Aetrix verify that CY7C1061G30-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10BVXIT?
All CY7C1061G30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10BVXIT part is unused and in its original packaging.
Return procedure for CY7C1061G30-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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