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Infineon Technologies CY7C1061G30-10ZSXIT
- Part No.:
- CY7C1061G30-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1061G30-10ZSXIT.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,591
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Product details
Overview
CY7C1061G30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and low standby current (20 mA typical). It serves as a high-reliability data buffer in industrial control modules requiring ECC-enabled memory integrity.
For engineers reviewing the CY7C1061G30-10ZSXIT datasheet, CY7C1061G30-10ZSXIT pinout, CY7C1061G30-10ZSXIT application, or CY7C1061G30-10ZSXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, byte-enable write control (BHE/ BLE), ERR pin assertion logic, and voltage-range-specific timing compliance - all confirmed against Infineon's official Rev. *T datasheet (001-81540).
Technical Context
This SRAM implements a synchronous, addressable memory array with dedicated ECC circuitry that detects and corrects single-bit errors on read cycles without automatic write-back. The ERR pin asserts high only during correction events, enabling system-level fault logging without interrupt overhead.
It supports dual chip enable (CE1/CE2) and single CE configurations, byte-selectable writes via BHE (I/O8–I/O15) and BLE (I/O0–I/O7), and operates across three voltage ranges - here configured for 2.2 V–3.6 V at 10 ns tAA - with TTL-compatible input thresholds and output drive strength validated per DC specs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); provides full-word parallel access for microcontroller or FPGA data buffering. |
| Access Time (tAA) | 10 ns at 2.2 V–3.6 V; enables integration into 100 MHz bus systems with zero wait states. |
| ECC Function | Embedded single-bit error detection and correction per read cycle; no software intervention required. |
| Supply Voltage Range | 2.2 V–3.6 V; compatible with 3.3 V industrial logic rails and mixed-voltage SoC interfaces. |
| Standby Current (ISB2) | 20 mA typical; ensures low-power retention during idle periods in always-on control units. |
| ERR Pin Behavior | Open-drain output asserted HIGH during single-bit correction; used for asynchronous fault flagging without CPU polling. |
| Package | 48-ball VFBGA (6 × 8 × 1.0 mm); supports high-density PCB layouts with fine-pitch routing. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.5 mm ball pitch, RoHS-compliant Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 placement varies by variant (Ball G2 or H6). |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; supports full-word or byte (via BHE/ BLE) reads/writes. |
| CE1 / CE2 | Dual Chip Enable Inputs | CE = LOW when CE1 = LOW and CE2 = HIGH; enables hierarchical memory decoding in multi-chip systems. |
| WE | Write Enable Input | Active-low control for write operations; latches data on rising edge of WE in conjunction with address setup. |
| OE | Output Enable Input | Active-low control for read data output; places I/Os in high-Z when deasserted. |
| BHE / BLE | Byte Enable Inputs | BHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7); supports 8-bit peripheral interfacing. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit correction; requires external pull-up for logic-level compatibility. |
| VCC / VSS | Power / Ground | Separate power and ground balls distributed for low-noise operation; VCC pins support decoupling near I/O banks. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Hardware-accelerated single-bit error correction per read cycle, reducing firmware overhead and improving MTBF in harsh environments. |
| TTL-compatible I/O interface | Direct connection to legacy 3.3 V microcontrollers and FPGAs without level-shifting circuitry. |
| Low ISB2 standby current | 20 mA typical at 2.2–3.6 V enables >10-year data retention in battery-backed industrial loggers. |
| Multiple package options | 48-ball VFBGA footprint matches space-constrained designs while maintaining signal integrity via symmetric ball layout. |
| ERR pin with open-drain output | Enables wired-OR fault signaling across multiple memory devices for centralized error monitoring in safety-critical systems. |
Applications
| Industrial PLC Data Buffer | Railway Signaling Memory Module |
|---|---|
|
Use Scenario: Real-time I/O data caching in programmable logic controllers handling analog sensor inputs and actuator outputs under EMI-prone factory conditions. IC Role / Device Role / Timing Role: Primary 16-bit SRAM buffer with ECC protection for volatile process data, synchronized to 100 MHz backplane clock. Use Value: Prevents silent data corruption in control loops; ERR pin triggers diagnostic logging before corrupted values propagate to safety interlocks. |
Use Scenario: Non-volatile configuration storage and runtime variable buffering in EN 5012x-certified train signaling hardware operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: High-integrity memory for critical state variables, accessed via dual CE for redundancy arbitration. Use Value: Meets SIL-2 requirements for memory integrity; 10 ns access ensures deterministic response within 50 µs watchdog windows. |
| Medical Imaging Frame Buffer | Avionics Display Controller Cache |
|
Use Scenario: Temporary frame storage in portable ultrasound devices where radiation-induced soft errors must be mitigated without DRAM refresh overhead. IC Role / Device Role / Timing Role: ECC-protected line buffer between ADC pipeline and image processor, operating at 3.3 V with byte-enable writes. Use Value: Eliminates need for software checksum validation, reducing latency and CPU load during real-time scan processing. |
Use Scenario: Graphics cache in DO-254-compliant cockpit display units exposed to cosmic ray flux at flight altitude. IC Role / Device Role / Timing Role: Read-dominant memory for glyph and overlay data, with ERR pin feeding health monitoring subsystem. Use Value: Achieves SER FIT rate <0.1 FIT/Mb, satisfying airborne electronic hardware reliability targets per ARP4754A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C316000B-10TIN | No integrated ECC; requires external Hamming logic; 10 ns access at 3.3 V; 48-pin TSOP I package. | Lacks hardware error correction; increases PCB area and firmware complexity for error handling. | Select only if cost sensitivity outweighs reliability requirements and external ECC implementation is acceptable. |
| IS61WV102416BLL-10MLI | 10 ns access, 3.3 V only, no ERR pin; supports low-power ISB2 = 15 µA (vs. 20 mA here); no ECC. | Optimized for ultra-low standby power, not error resilience; unsuitable for safety-critical contexts. | Prefer for battery-powered non-safety devices where ECC is unnecessary and µA-level sleep current is mandatory. |
Compared with AS7C316000B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G30-10ZSXIT uniquely delivers hardware ECC with ERR signaling in a compact VFBGA, making it the only choice among these three for applications demanding certified memory integrity without design-level error-handling overhead.
Availability
CY7C1061G30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, railway signaling memory modules, and medical imaging frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1061G30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and reliable memory solutions for mission-critical systems.
CY7C1061G30-10ZSXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for high-reliability industrial and transportation applications where ECC-enabled data integrity and wide-voltage operation are mandatory.
FAQ
Does CY7C1061G30-10ZSXIT support automatic error correction write-back?
No. Per datasheet Note 1, this device performs single-bit error detection and correction during read cycles only, with corrected data presented on I/O lines but no automatic write-back to memory. System firmware must handle persistent correction if required, using the ERR pin as a trigger for targeted rewrite operations.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that asserts HIGH during single-bit error correction events. It must be externally pulled up to VCC via a 4.7 kΩ resistor to ensure valid logic levels. Leaving it floating or connecting directly to VCC violates datasheet Note 6 and may cause false assertions or latch-up risk.
Can CY7C1061G30-10ZSXIT operate at 1.8 V?
No. This variant (G30 suffix) is rated for 2.2 V–3.6 V only. Operation below 2.2 V violates the specified operating range and risks timing violations, ECC failure, or undefined ERR behavior. For 1.65 V–2.2 V operation, select CY7C1061G18 variants instead.
How does the dual CE architecture affect memory decoding in multi-SRAM systems?
CE1 and CE2 form a logical CE input where CE = LOW only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding: CE1 can serve as a bank select, CE2 as a chip select, enabling up to four devices per bus using two address lines - reducing decode logic and improving noise immunity versus single CE schemes.
CY7C1061G30-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1061G30-10ZSXIT FAQ
1.How can I place an order for CY7C1061G30-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10ZSXIT reliable?
The price and inventory of CY7C1061G30-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10ZSXIT?
CY7C1061G30-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10ZSXIT?
For technical support, including CY7C1061G30-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10ZSXIT requirements.
6.How does Aetrix verify that CY7C1061G30-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10ZSXIT?
All CY7C1061G30-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7C1061G30-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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