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Infineon Technologies CY7C1061G30-10ZXE

Part No.:
CY7C1061G30-10ZXE
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7C1061G30-10ZXE.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,436

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Product details

Overview

CY7C1061G30-10ZXE from Cypress Semiconductor is an automotive-grade 16-Mbit (1 M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over –40 °C to +125 °C, supporting 2.2 V–3.6 V supply and TTL-compatible I/Os for safety-critical memory subsystems in engine control units.

For engineers reviewing the CY7C1061G30-10ZXE datasheet, CY7C1061G30-10ZXE pinout, CY7C1061G30-10ZXE application, or CY7C1061G30-10ZXE equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature compliance, byte-selectable write capability via BHE/ BLE, and dual-package availability in 48-ball VFBGA and 48-pin TSOP I.

Technical Context

The CY7C1061G30-10ZXE implements on-die ECC encoding and decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back - requiring external intervention for error logging or recovery. Its address space spans A0–A19 (20-bit), supporting full 1 M-word addressing with byte-level granularity via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls.

It features three power states: active (ICC = 90 mA typical at 100 MHz), standby ISB2 (20 mA typical), and data retention (VDR = 1.0 V, ICCDR ≤ 50 mA). All I/Os enter high-impedance when CE is HIGH or OE/BHE/ BLE are deasserted, ensuring clean bus isolation in multi-device systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory density16 Mbit (1 M words × 16 bit) - supports 2 MB of word-aligned SRAM storage with ECC protection per 16-bit word
Access time (tAA)10 ns - enables direct interface with 100 MHz microcontrollers without wait states
Operating voltage2.2 V–3.6 V - compatible with automotive 3.3 V rails and tolerant of transient brownouts down to 2.2 V
Temperature range–40 °C to +125 °C (Automotive-E grade) - qualified for under-hood ECU deployment
ECC capabilitySingle-bit error correction per 16-bit word - ensures functional safety compliance (e.g., ISO 26262 ASIL-B/C) without external logic
Standby current (ISB2)20 mA typical - reduces quiescent power in sleep modes while retaining full memory content
Data retention voltage1.0 V - allows low-power backup operation during main supply loss, preserving state across ignition cycles

Pinout & Package

Available in two RoHS-compliant packages: 48-ball Very Fine Pitch Ball Grid Array (VFBGA, 6 × 8 × 1.0 mm) and 48-pin Thin Small Outline Package Type I (TSOP I, 12 × 18.4 × 1 mm). Both packages support identical pin functions and thermal performance validated per JEDEC standards.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address inputs20-bit address bus enabling full 1 M-word addressing; no internal multiplexing required
I/O0–I/O15Bidirectional data bus16-bit parallel interface with tristate control; supports simultaneous or byte-wise transfers
CEChip enableActive-low global select; places all I/Os in high-Z when HIGH, enabling multi-chip memory expansion
WEWrite enableActive-low control initiating write cycle; timing-critical for meeting tPWE ≥ 7 ns minimum pulse width
OEOutput enableActive-low control enabling read data output; decouples read timing from chip select (tDOE = 5 ns)
BHE / BLEByte high/low enableIndependent 8-bit write masking: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7
VCC / VSSPower / groundDual VCC pins and multiple VSS pins reduce IR drop and improve noise immunity in high-speed operation
NCNo-connectUnbonded pads (e.g., A16, A17 in TSOP); must be left floating or tied to GND per layout guidelines

Key Features

FeatureDesign Value
Embedded ECC logicOn-die Hamming-code encoder/decoder corrects single-bit errors in real time during reads - eliminates need for external ECC ASIC or FPGA logic
Automotive qualificationQualified to AEC-Q100 Grade 1 (–40 °C to +125 °C) with full DC/AC characterization - suitable for powertrain and chassis control modules
Byte-selectable writesIndependent BHE and BLE inputs allow partial-word writes without read-modify-write sequences - improves firmware efficiency in CAN message buffering
Low-power retention modeOperates at 1.0 V with ≤50 mA current - maintains full memory image during vehicle sleep mode with minimal battery drain
TTL-compatible I/OVIH/VIL thresholds match legacy 5 V TTL logic families - simplifies integration with older microcontrollers lacking 3.3 V LVTTL support

Applications

Engine Control Unit (ECU)Advanced Driver Assistance System (ADAS) Sensor Fusion

Use Scenario: Real-time storage of calibrated fuel injection maps, knock sensor history, and misfire counters during combustion cycles.

IC Role / Device Role / Timing Role: Primary working memory for 32-bit RISC MCU with deterministic 10 ns access latency and ECC-protected data integrity.

Use Value: Prevents silent data corruption in safety-critical calibration tables, satisfying ISO 26262 ASIL-B fault tolerance requirements.

Use Scenario: Buffering synchronized radar, camera, and ultrasonic timestamped frames prior to fusion algorithm execution.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer interfaced directly to DMA controller with byte-enable write granularity.

Use Value: Enables concurrent capture and processing without frame loss, leveraging 16-bit bus width and 10 ns tAA for sub-microsecond pixel data access.

Transmission Control Module (TCM)Electric Power Steering (EPS) Controller

Use Scenario: Storing adaptive shift strategy parameters, torque converter lock-up profiles, and gear position history across drive cycles.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding mission-critical configuration data updated only during maintenance windows.

Use Value: Ensures parameter persistence during ignition-off periods via 1.0 V data retention mode, eliminating reliance on external backup capacitors.

Use Scenario: Real-time storage of motor phase current samples, steering angle derivatives, and assist torque lookup tables.

IC Role / Device Role / Timing Role: Low-jitter memory subsystem for 20 kHz motor control loop with guaranteed ECC-protected read/write timing.

Use Value: Mitigates single-event upsets from electromagnetic interference near high-current motor drivers, maintaining closed-loop stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102416BLL-10MLINo integrated ECC; requires external error detection logic; 10 ns access, same 1 M × 16 organizationLacks built-in single-bit correction - unsuitable for ASIL-B/C systems without additional safety mechanismsSelect only if ECC is implemented externally and cost sensitivity outweighs functional safety certification effort
MT28EW128ABA1HPC-0SIT128-Mbit Quad SPI NOR Flash with ECC; serial interface; not pin-compatible; slower random accessNon-volatile storage with execute-in-place capability - used for firmware storage, not working RAMChoose for code storage or configuration retention; not a functional replacement for fast SRAM working memory

Compared with IS61WV102416BLL-10MLI and MT28EW128ABA1HPC-0SIT, the CY7C1061G30-10ZXE uniquely delivers deterministic 10 ns parallel-access SRAM performance with on-die ECC - essential for real-time automotive control where latency and data integrity are jointly constrained.

Availability

CY7C1061G30-10ZXE is available at Aetrix Electronics and suitable for engine control units, ADAS sensor fusion modules, transmission control systems, and electric power steering controllers requiring stable component supply across extended automotive lifecycles.

Supply support for CY7C1061G30-10ZXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with headquarters in San Jose, CA.

The CY7C1061G series targets automotive safety-critical memory subsystems, delivering ECC-enhanced SRAM optimized for ASIL-B/C compliance, extended temperature operation, and seamless integration with 32-bit MCUs in powertrain and chassis domains.

FAQ

Does CY7C1061G30-10ZXE support automatic error correction during write operations?

No. The embedded ECC logic corrects single-bit errors only during read cycles. Write operations do not trigger automatic correction or write-back; detected errors require external firmware handling for logging or recovery. The device lacks write-time ECC verification per the datasheet Note 1.

What is the maximum clock frequency supported for continuous read/write cycling?

The device does not use a clock signal. It operates asynchronously with timing defined by tRC = 10 ns (minimum read cycle time) and tWC = 10 ns (minimum write cycle time), enabling effective 100 MHz burst operation when interfaced with a controller meeting setup/hold timing constraints.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW enables full 16-bit writes to I/O0–I/O15. The datasheet confirms this in the Functional Description section, stating "byte accesses" include independent or combined enable signals for upper/lower bytes.

Is the 48-ball VFBGA package lead-free and RoHS compliant?

Yes. The "ZXE" suffix in CY7C1061G30-10ZXE explicitly denotes a lead-free, RoHS-compliant 48-ball VFBGA package per Cypress ordering information (Document 001-84821, Page 13), with matte tin finish and JEDEC-standard reflow profile compatibility.

CY7C1061G30-10ZXE Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY7C1061G30-10ZXE FAQ

1.How can I place an order for CY7C1061G30-10ZXE through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061G30-10ZXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061G30-10ZXE reliable?

The price and inventory of CY7C1061G30-10ZXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10ZXE is usually 5 days.

3.What payment methods are accepted for CY7C1061G30-10ZXE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10ZXE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061G30-10ZXE?

CY7C1061G30-10ZXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061G30-10ZXE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061G30-10ZXE?

For technical support, including CY7C1061G30-10ZXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10ZXE requirements.

6.How does Aetrix verify that CY7C1061G30-10ZXE is sourced from the original manufacturer or authorized distributors?

All CY7C1061G30-10ZXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10ZXE meets industry standards.

7.What is the process for return or replacement of CY7C1061G30-10ZXE?

All CY7C1061G30-10ZXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10ZXE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061G30-10ZXE part is unused and in its original packaging.

Return procedure for CY7C1061G30-10ZXE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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