Infineon Technologies CY7C1061G30-10ZXET
- Part No.:
- CY7C1061G30-10ZXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7C1061G30-10ZXET.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:1,075
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Product details
Overview
CY7C1061G30-10ZXET from Cypress Semiconductor is an automotive-grade 16-Mbit (1 M × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over –40 °C to +125 °C, supporting 2.2 V–3.6 V supply and TTL-compatible I/O for safety-critical memory subsystems in engine control units.
For engineers reviewing the CY7C1061G30-10ZXET datasheet, CY7C1061G30-10ZXET pinout, CY7C1061G30-10ZXET application, or CY7C1061G30-10ZXET equivalent, key selection factors include ECC-enabled data integrity, dual-byte write control (BHE/ BLE), low ISB2 standby current (20 mA typical), and AEC-Q100 Grade 1 qualification for automotive electronics.
Technical Context
This SRAM implements on-die ECC encoding and decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back-error correction occurs transparently in the data path before output buffer stage. The device uses asynchronous address-latched access with independent byte enables for true 8-bit sub-word writes.
It supports three power states: active (ICC = 90 mA typical @ 100 MHz), automatic CE-controlled standby (ISB2 = 20 mA), and 1.0-V data retention mode (ICC_DR ≤ 50 mA). All I/Os enter high-impedance state when CE is HIGH or OE/BHE/ BLE are deasserted, ensuring clean bus isolation in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1 M words × 16 bit) - supports full-word parallel access for microcontroller data buffers |
| Access time (tAA) | 10 ns - enables direct interface with 100 MHz bus clocks without wait states |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade) - qualified for under-hood ECU deployment |
| ECC capability | Single-bit error detection and correction per 16-bit word - improves FIT rate in safety-critical storage |
| Supply voltage range | 2.2 V to 3.6 V - compatible with modern low-voltage automotive power domains |
| Standby current (ISB2) | 20 mA typical - reduces quiescent power in always-on vehicle modules |
| Data retention voltage | 1.0 V - maintains memory state during brown-out or battery backup scenarios |
Pinout & Package
Available in 48-ball VFBGA (6 × 8 × 1.0 mm) and 48-pin TSOP I (12 × 18.4 × 1 mm) packages. Pin functions are identical across both packages; NC pins are unconnected internally.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE | Chip Enable | Active-low global select; disables all outputs and enters standby when HIGH |
| WE | Write Enable | Active-low write strobe; initiates write cycle when LOW with CE and BHE/ BLE asserted |
| OE | Output Enable | Active-low read enable; controls output buffer drive only (does not affect internal timing) |
| BHE | Byte High Enable | Controls I/O8–I/O15; enables upper byte write/read independently of lower byte |
| BLE | Byte Low Enable | Controls I/O0–I/O7; enables lower byte write/read with full 16-bit address alignment |
| A0–A19 | Address Inputs | 20-bit address bus supporting 1 M-word addressing; no internal address latching |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit TTL-compatible I/O; tri-stated when CE HIGH or OE/BHE/ BLE inactive |
| VCC / VSS | Power / Ground | Dual VCC pins (balls 47, 48) and dual VSS pins (balls 3, 4) reduce IR drop and noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Corrects single-bit errors per 16-bit word in real time without CPU intervention or latency penalty |
| Dual byte-write control | Independent BHE and BLE allow simultaneous or selective 8-bit writes to upper/lower bytes within same address |
| Low-power standby modes | ISB2 = 20 mA typical at 0 Hz clock; supports rapid wake-up (<100 µs) from deep sleep |
| TTL-compatible I/O | VIH = 2.0 V min, VOL = 0.4 V max - interoperable with legacy 3.3 V and 5 V logic families |
| Automotive qualification | AEC-Q100 Grade 1 compliant; validated for 125 °C junction operation and extended thermal cycling |
Applications
| Engine Control Unit (ECU) Data Buffer | Advanced Driver Assistance System (ADAS) Sensor Cache |
|---|---|
|
Use Scenario: Stores real-time sensor fusion results and actuator command history in diesel common-rail injection controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with 32-bit RISC MCU via 16-bit data bus and 20-bit address lines. Use Value: 10 ns tAA eliminates wait states at 100 MHz bus speed; ECC prevents silent corruption in closed-loop torque calculation. |
Use Scenario: Caches raw radar point-cloud frames before DSP preprocessing in 77 GHz ADAS front modules. IC Role / Device Role / Timing Role: High-reliability scratchpad memory with byte-select writes for partial frame updates without full-word overwrite. Use Value: Dual BHE/ BLE enables efficient 8-bit metadata tagging alongside 16-bit coordinate data; 125 °C rating sustains operation near RF front-end. |
| Infotainment Head Unit Boot ROM Shadow | Electric Power Steering (EPS) Fault Log Storage |
|
Use Scenario: Mirrors boot firmware image from NAND flash into fast-access SRAM during cold start for deterministic boot timing. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding executable code with ECC-protected instruction fetch path. Use Value: 1.0 V data retention preserves boot image during battery disconnect; 2.2–3.6 V range matches infotainment PMIC output rails. |
Use Scenario: Logs torque sensor anomalies and motor phase faults over 10,000+ ignition cycles in EPS control modules. IC Role / Device Role / Timing Role: Write-enduring memory with ECC-protected circular buffer for diagnostic event timestamps and error codes. Use Value: ISB2 = 20 mA enables continuous logging in sleep mode; automotive temperature range ensures reliability in steering column mounting location. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; 10 ns access, 2.5 V–3.6 V supply, –40 °C to +85 °C industrial temp | Lacks fault-tolerant data path; requires external ECC logic or software mitigation | Select only if system-level ECC is implemented externally and ambient temperature stays below 85 °C |
| AS6C1008-10TIN | 8-Mbit (512K × 16), no ECC, 3.3 V only, –40 °C to +125 °C, 10 ns access | Half density; lacks byte-enable granularity and low-voltage flexibility (2.2–3.6 V) | Use where memory footprint is constrained and ECC is not required for functional safety compliance |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C1061G30-10ZXET uniquely delivers integrated ECC, wider voltage range, and AEC-Q100 Grade 1 qualification-making it the only choice for ISO 26262 ASIL-B/C memory subsystems requiring hardware-level error resilience.
Availability
CY7C1061G30-10ZXET is available at Aetrix Electronics and suitable for engine control units, ADAS sensor modules, infotainment boot systems, and electric power steering controllers requiring stable component supply across automotive production lifecycles.
Supply support for CY7C1061G30-10ZXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with headquarters in San Jose, CA.
The CY7C1061G product line delivers automotive-qualified SRAMs with embedded ECC specifically for ASIL-B/C systems where data integrity must be guaranteed without software overhead or external circuitry.
FAQ
Does CY7C1061G30-10ZXET support automatic error correction during write operations?
No. The embedded ECC logic operates only during read cycles to detect and correct single-bit errors in the output data path. It does not perform write-time encoding or automatic write-back on error detection, as explicitly stated in the datasheet Note 1. Error correction is transparent and adds no latency to read access time.
What is the maximum clock frequency supported for burst reads using this SRAM?
This is an asynchronous SRAM with no internal clock input; it does not support burst reads. Maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 million random accesses per second. Interface timing relies solely on CE, OE, and address setup/hold constraints-not a system clock.
Can BHE and BLE be used simultaneously to perform a full 16-bit write?
Yes. Asserting both BHE and BLE LOW while CE and WE are LOW enables full 16-bit write to the addressed location. The device treats simultaneous assertion as a standard word write-no conflict or undefined behavior occurs, and both byte lanes drive valid data concurrently.
Is the 48-ball VFBGA package RoHS and REACH compliant?
Yes. The CY7C1061G30-10ZXET in VFBGA packaging is Pb-free and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Cypress's official product change notices and material declarations dated 2016 onward.
CY7C1061G30-10ZXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7C1061G30-10ZXET FAQ
1.How can I place an order for CY7C1061G30-10ZXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061G30-10ZXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061G30-10ZXET reliable?
The price and inventory of CY7C1061G30-10ZXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061G30-10ZXET is usually 5 days.
3.What payment methods are accepted for CY7C1061G30-10ZXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061G30-10ZXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061G30-10ZXET?
CY7C1061G30-10ZXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061G30-10ZXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061G30-10ZXET?
For technical support, including CY7C1061G30-10ZXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061G30-10ZXET requirements.
6.How does Aetrix verify that CY7C1061G30-10ZXET is sourced from the original manufacturer or authorized distributors?
All CY7C1061G30-10ZXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061G30-10ZXET meets industry standards.
7.What is the process for return or replacement of CY7C1061G30-10ZXET?
All CY7C1061G30-10ZXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061G30-10ZXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061G30-10ZXET part is unused and in its original packaging.
Return procedure for CY7C1061G30-10ZXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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