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Infineon Technologies CY7C1061GE-10BV1XIT
- Part No.:
- CY7C1061GE-10BV1XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GE-10BV1XIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,160
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Product details
Overview
CY7C1061GE-10BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output signaling correction events. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and supports data retention at 1.0 V. Used in industrial control systems requiring fault-resilient memory for firmware storage and real-time data buffering.
For engineers reviewing the CY7C1061GE-10BV1XIT datasheet, CY7C1061GE-10BV1XIT pinout, CY7C1061GE-10BV1XIT application, or CY7C1061GE-10BV1XIT equivalent, key selection criteria include ECC-enabled reliability, multi-voltage support, TSOP I / VFBGA package compatibility, byte-enable write control (BHE/ BLE), and ERR pin behavior during single-bit correction cycles.
Technical Context
This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read operations without automatic write-back. The ERR pin asserts high only when a correctable error is found and corrected - no latching or interrupt generation occurs.
It supports both single CE (CE) and dual CE (CE1/CE2) configurations, with configurable A19 pin placement (Ball G2 or H6 in VFBGA) to match legacy address mapping. Byte write enable (BHE/ BLE) allows independent upper/lower 8-bit writes, and all I/Os enter high-Z state when deselected or during OE/BLE/BHE deassertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); enables compact 2 MB data buffers without external multiplexing. |
| Access Time (tAA) | 10 ns at VCC = 4.5–5.5 V or 2.2–3.6 V; ensures timing compliance in 100 MHz bus systems with minimal wait states. |
| ECC Function | Embedded single-bit error detection and correction per read cycle; reduces uncorrectable failure rate to <0.1 FIT/Mb. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; supports mixed-voltage system integration and legacy 5 V designs. |
| Standby Current (ISB2) | 20 mA typical at VCC max and f = 0; enables low-power hold mode during processor sleep without data loss. |
| Data Retention Voltage | 1.0 V minimum; guarantees nonvolatile data preservation during brown-out or controlled power-down sequences. |
| I/O Compatibility | TTL-compatible inputs and outputs; eliminates level-shifter requirements in 5 V or 3.3 V microcontroller interfaces. |
Pinout & Package
Package: 48-ball VFBGA (6 × 8 × 1.0 mm), RoHS-compliant, industrial temperature grade (–40 °C to +85 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 location configurable (Ball G2 or H6) for vendor interoperability. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive, enabling bus sharing. |
| CE / CE1 & CE2 | Chip Enable Control | Single CE (active LOW) or dual CE (CE1=LOW & CE2=HIGH) selection; supports hierarchical memory decoding. |
| WE | Write Enable | Active LOW write strobe; initiates write cycle when CE and OE are asserted appropriately. |
| OE | Output Enable | Active LOW read strobe; controls output driver enable independently of CE for shared-bus timing flexibility. |
| BHE / BLE | Byte Write Enables | BHE enables I/O8–I/O15 writes; BLE enables I/O0–I/O7 writes; supports 8-bit peripheral interfacing without glue logic. |
| ERR | Error Indication Output | Open-drain HIGH pulse during single-bit correction; requires external pull-up; no auto-clear or latch behavior. |
| VCC / VSS | Power & Ground | Dual VCC pins (Balls C1 & D1) and multiple VSS balls (A1, B2, E1, F1, G1, H1) reduce IR drop and improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| On-die ECC engine | Corrects single-bit errors per read access without software intervention or memory controller overhead. |
| Multi-voltage operation | Three discrete VCC ranges allow direct integration into 1.8 V, 3.3 V, and 5 V subsystems without regulators or level shifters. |
| Configurable A19 pinout | Supports both Ball G2 and H6 placements to maintain pin compatibility with Cypress and third-party 1M×16 SRAMs. |
| ERR output signaling | Hardware-level indication of correction event; enables system-level logging or diagnostic flagging without polling. |
| Low ISB2 standby current | 20 mA typical at full VCC and zero frequency enables energy-efficient idle states in battery-backed or always-on systems. |
Applications
| Industrial PLC Data Logging | Railway Signaling Memory Buffer |
|---|---|
|
Use Scenario: Storing real-time sensor readings and control state history in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile buffer memory with ECC protection for critical operational logs; accessed via parallel bus at ≤100 MHz. Use Value: Prevents silent data corruption in long-term logging; 10 ns access ensures deterministic response within 10 µs control loops. |
Use Scenario: Holding fail-safe configuration tables and event timestamps in EN 5012x-certified railway interlocking units. IC Role / Device Role / Timing Role: High-reliability SRAM for safety-critical parameter storage; ERR pin feeds into watchdog monitoring circuitry. Use Value: Reduces SER FIT rate to <0.1 FIT/Mb, meeting SIL-2 functional safety requirements for memory integrity. |
| Medical Imaging Frame Buffer | Avionics Display Controller Cache |
|
Use Scenario: Temporary storage of DICOM image tiles during CT/MRI reconstruction pipelines where bit errors could misrepresent anatomical features. IC Role / Device Role / Timing Role: High-speed frame buffer with ECC validation before pixel rendering; operated at 3.3 V with 10 ns tAA. Use Value: Eliminates need for software CRC checks on every frame read, reducing CPU load and latency in real-time imaging chains. |
Use Scenario: Caching navigation map segments and flight plan metadata in DO-254-compliant cockpit display units. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM for ARINC-661 GUI layer management; retains data at 1.0 V during transient power dips. Use Value: Maintains display continuity during avionics bus voltage sags; VFBGA package supports high-density, low-profile PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-10TIN | No integrated ECC; requires external logic or controller-based correction; 10 ns access, 5 V only. | Lacks hardware-level error reporting; unsuitable for safety-critical logging where ERR signal is required. | Select only if ECC is implemented externally and 5 V-only operation is acceptable. |
| IS61WV102416BLL-10MLI | 10 ns access, 3.3 V only, no ERR pin; supports low-power ISB2 = 15 µA (not mA). | Lower standby current but no error visibility; incompatible with multi-voltage or ERR-driven diagnostics. | Prefer for ultra-low-power portable systems where ECC is not mandated and voltage is fixed at 3.3 V. |
Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE-10BV1XIT uniquely combines hardware ECC correction, ERR output signaling, and triple-voltage support - making it the only choice for industrial and transportation systems requiring both fault detection transparency and flexible power rail integration.
Availability
CY7C1061GE-10BV1XIT is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling units, medical imaging subsystems, and avionics display controllers requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.
Supply support for CY7C1061GE-10BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including industrial-grade SRAMs with advanced reliability features.
CY7C1061GE belongs to Cypress's legacy fast SRAM product line, designed specifically for mission-critical embedded systems demanding ECC protection, multi-voltage operation, and deterministic timing in harsh environments.
FAQ
Does CY7C1061GE-10BV1XIT perform automatic write-back after ECC correction?
No. The device corrects single-bit errors during read cycles but does not automatically rewrite the corrected data back to the memory array. System firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that goes HIGH only during a read cycle where a single-bit error is detected and corrected. It remains LOW otherwise. If unused, the pin must be left floating per datasheet Note 6; adding a pull-up resistor is required only when actively monitoring correction events.
Can CY7C1061GE-10BV1XIT operate at 2.5 V?
Yes. The device supports the 2.2 V–3.6 V VCC range, and 2.5 V falls within specification. Electrical characteristics (e.g., VOH, VOL, ICC) are guaranteed across this full range, with typical values measured at 3.0 V per Note 10. No derating or special configuration is needed.
Is the 48-ball VFBGA package (BV1XI) lead-free and RoHS-compliant?
Yes. The "BV1XI" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with industrial temperature rating (–40 °C to +85 °C). This is confirmed in the Ordering Information section (page 17) and Package Diagrams (page 20) of the official datasheet Rev. *T.
CY7C1061GE-10BV1XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE-10BV1XIT FAQ
1.How can I place an order for CY7C1061GE-10BV1XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE-10BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE-10BV1XIT reliable?
The price and inventory of CY7C1061GE-10BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE-10BV1XIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GE-10BV1XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE-10BV1XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE-10BV1XIT?
CY7C1061GE-10BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE-10BV1XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE-10BV1XIT?
For technical support, including CY7C1061GE-10BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE-10BV1XIT requirements.
6.How does Aetrix verify that CY7C1061GE-10BV1XIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE-10BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE-10BV1XIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GE-10BV1XIT?
All CY7C1061GE-10BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE-10BV1XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE-10BV1XIT part is unused and in its original packaging.
Return procedure for CY7C1061GE-10BV1XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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