Infineon Technologies CY7C1061GE-10BVJXI

Overview

CY7C1061GE-10BVJXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and ERR output pin for real-time error indication. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and supports dual chip enable (CE1/CE2) in a 48-ball VFBGA package - used in industrial control systems requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY7C1061GE-10BVJXI datasheet, CY7C1061GE-10BVJXI pinout, CY7C1061GE-10BVJXI application, or CY7C1061GE-10BVJXI equivalent, key selection criteria include ECC-enabled read-cycle error detection latency, dual CE timing compatibility, VFBGA thermal performance at 125 °C ambient, and byte-write control via BHE/BLE pins in memory-mapped microcontroller interfaces.

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during every read cycle without CPU intervention, asserting the ERR pin high upon correction. The device uses standard asynchronous parallel interface timing with independent byte enables (BHE/BLE) to support 8-bit sub-accesses within the 16-bit data bus.

It supports three distinct V_CC operating windows with corresponding speed grades: 10 ns at 2.2–3.6 V and 4.5–5.5 V, and 15 ns at 1.65–2.2 V. Standby current drops to 20 mA typical in ISB2 mode with CMOS-level CE deassertion, enabling low-power retention in battery-backed systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish. Thermal resistance θ_JA = 45 °C/W (JEDEC JESD51-2, 4-layer board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-107:K, CY7C1061GE-10BVJXI uniquely delivers asynchronous 10 ns ECC SRAM with hardware ERR signaling in compact VFBGA - critical for retrofitting legacy industrial controllers and safety-certified avionics where timing determinism and interrupt-driven error response are mandatory.

Availability

CY7C1061GE-10BVJXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data logs, avionics flight management units, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GE-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY7C1061GE belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for mission-critical embedded systems demanding hardware ECC, wide-voltage operation, and industrial temperature resilience.

FAQ

Does CY7C1061GE-10BVJXI support automatic error correction write-back?

No. The device performs single-bit error correction transparently during read cycles but does not automatically write the corrected data back to the memory array. Correction is internal and ephemeral - the original uncorrected word remains stored unless explicitly rewritten by the host system. This behavior is documented in Note 1 of the datasheet and avoids unintended write wear or timing penalties.

What is the function of the ERR pin during normal (error-free) operation?

The ERR pin remains in high-impedance (floating) state when no single-bit error is detected or corrected. It is an open-drain output that requires an external pull-up resistor to V_CC; during error-free reads, it does not drive any voltage level and must not be left unconnected in noise-sensitive environments. Its assertion is strictly synchronous with the read data valid window.

Can CY7C1061GE-10BVJXI operate at 2.5 V supply?

Yes. The device supports the 2.2 V–3.6 V V_CC range, and 2.5 V falls within specification. At 2.5 V, it maintains 10 ns access time and meets all DC/AC electrical characteristics per the datasheet's "CY7C1061G(E)30" speed grade, including ICC = 90 mA typical at 100 MHz and ISB2 = 20 mA typical in standby.

How does the dual CE architecture affect power sequencing?

Power sequencing must ensure CE1 and CE2 reach valid logic levels before V_CC stabilizes to prevent undefined chip enable states. The device enters low-power ISB2 mode only when CE1 is HIGH *or* CE2 is LOW - not both - so improper sequencing may cause unintended wake-up or bus contention. Recommended practice is to tie CE2 to V_CC and control CE1 alone for simplified interface.