Infineon Technologies CY7C1061GE-10BVJXIT

Overview

CY7C1061GE-10BVJXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V triple-voltage operation, and ERR output pin for real-time error indication. It serves as fault-tolerant data buffer in industrial controllers requiring ECC-enabled memory retention.

For engineers reviewing the CY7C1061GE-10BVJXIT datasheet, CY7C1061GE-10BVJXIT pinout, CY7C1061GE-10BVJXIT application, or CY7C1061GE-10BVJXIT equivalent, key selection criteria include ECC correction capability, multi-voltage compatibility, ERR signal timing behavior, and 48-ball VFBGA (BVJXI) package footprint alignment with high-density PCB layouts.

Technical Context

This SRAM implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when a correctable error is found and corrected - no automatic write-back occurs.

It supports dual chip enable (CE1/CE2) and byte-level control via BHE/BLE, enabling selective upper/lower byte writes and reads. Address range spans A0–A19 (1 M words), with A19 placed at ball G2 in the BVJXI package configuration.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, Pb-free, RoHS-compliant (Package ID: BVJXI). Pinout corresponds to dual chip enable (CE1/CE2) configuration with ERR output and A19 at ball G2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE-10BVJXIT uniquely delivers integrated ECC correction, triple-voltage support, and ERR signaling in a single VFBGA package - reducing design risk and validation effort in safety-critical embedded systems.

Availability

CY7C1061GE-10BVJXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data loggers requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7C1061GE-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full CY7C1061G/GE product line as part of its industrial memory portfolio.

This device belongs to Infineon's high-reliability SRAM family designed specifically for mission-critical industrial, medical, and transportation systems demanding ECC protection and wide operating voltage flexibility.

FAQ

Does CY7C1061GE-10BVJXIT perform automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations but does not automatically rewrite the corrected data back to the memory array. The ERR pin signals that correction occurred, and system firmware must decide whether to initiate a write cycle to restore the corrected value if persistent storage is required.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that goes HIGH during a read cycle when a single-bit error is detected and corrected. If unused, it must be left floating per datasheet guidance; if monitored, it requires an external pull-up resistor to VCC. It does not drive low actively - only pulls low through internal FET when inactive.

Can CY7C1061GE-10BVJXIT operate at 2.5 V, and what speed grade applies?

Yes - it operates across 2.2–3.6 V, so 2.5 V falls within specification. At 2.5 V, the -10 speed grade guarantees tAA ≤ 10 ns, supporting reliable 100 MHz bus timing. ICC remains within 90 mA typical, and ISB2 stays at 20 mA typical, matching performance at 3.0 V.

How does the dual chip enable (CE1/CE2) logic differ from single CE operation?

CE1 and CE2 form a logical AND: device is enabled only when CE1 = LOW and CE2 = HIGH. This allows hierarchical memory mapping - e.g., CE1 driven by higher-order address bits and CE2 by chip-select decode - unlike single CE where one pin controls all selection. Pinout and timing parameters remain identical in both configurations.