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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7C1061GE-10BVXIT

Name: CY7C1061GE-10BVXIT
Brand: Infineon Technologies
SKU: CY7C1061GE-10BVXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7C1061GE-10BVXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-VFBGA

Datasheet:: CY7C1061GE-10BVXIT.pdf

Description:: IC SRAM 16MBIT PARALLEL 48VFBGA

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Product details

Overview

CY7C1061GE-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) synchronous CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time, supporting 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, and featuring an active ERR output pin for real-time ECC event indication. It is used in industrial control modules requiring data integrity during extended operation under temperature stress.

For engineers reviewing the CY7C1061GE-10BVXIT datasheet, CY7C1061GE-10BVXIT pinout, CY7C1061GE-10BVXIT application, or CY7C1061GE-10BVXIT equivalent, key selection criteria include ECC-enabled reliability, multi-voltage compatibility, TSOP I and VFBGA package options, and explicit ERR signal behavior during read-cycle correction events.

Technical Context

This SRAM implements full on-die ECC logic that detects and corrects single-bit errors in real time during read operations without external circuitry. The ERR pin asserts high only when a single-bit error is both detected and corrected - no automatic write-back occurs, and no multi-bit error handling is provided.

It supports dual chip enable (CE1/CE2) and single CE configurations, byte-level writes via BHE/ BLE, TTL-compatible I/O signaling, and three distinct V_CC operating ranges with corresponding timing and current specifications. Data retention is guaranteed down to 1.0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16 Mbit (1,048,576 words × 16 bits); enables compact 2 MB data buffers in space-constrained industrial controllers.
Access Time (t_AA)	10 ns at V_CC = 2.2–3.6 V or 4.5–5.5 V; ensures deterministic timing for 100 MHz bus interfaces without wait states.
ECC Function	On-die single-bit error detection and correction per read cycle; ERR pin signals correction event - no software intervention required.
Supply Voltage Ranges	1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; allows direct integration into mixed-voltage systems without level-shifting.
Standby Current (I_SB2)	20 mA typical at V_CC = 3 V; supports low-power hold modes in battery-backed or energy-sensitive applications.
Data Retention Voltage	1.0 V minimum; maintains memory state during brown-out or controlled power-down sequences.
Operating Temperature	–40 °C to +85 °C (Industrial grade); validated for deployment in motor drives and PLC backplanes.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
CE / CE1, CE2	Chip Enable (single or dual mode)	Dual CE logic: CE = LOW only when CE1 = LOW AND CE2 = HIGH; enables hierarchical memory banking control.
WE	Write Enable	Active-low control for synchronous write cycles; latches address and data on falling edge.
OE	Output Enable	Active-low gate for I/O bus drivers; places I/O pins in high-Z when deasserted to prevent bus contention.
BHE, BLE	Byte High/Low Enable	Independent 8-bit write masking: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7.
ERR	Error Indication Output	Open-drain output asserted HIGH during successful single-bit correction; requires external pull-up for logic-level compatibility.
A0–A19	Address Inputs	20-bit address bus supporting full 1M-word addressing; A19 placement varies by package variant (Ball G2 or H6 in VFBGA).
I/O0–I/O15	Bi-directional Data Bus	16-bit parallel interface with TTL-compatible voltage thresholds; supports concurrent read/write arbitration via OE/WE timing.

Key Features

Feature	Design Value
Embedded ECC logic	Hardware-accelerated single-bit error correction per read cycle - eliminates need for external ECC controller or firmware overhead.
Multi-voltage operation	Three independent V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) with guaranteed timing - simplifies migration across legacy and modern power domains.
ERR output pin	Dedicated open-drain signal indicating real-time correction event - enables system-level logging or fault-aware state machine transitions.
Low-power standby mode	I_SB2 = 20 mA typical at 3 V - reduces idle power in always-on industrial gateways without sacrificing wake latency.
Byte-selectable writes	Independent BHE/ BLE control allows partial-word updates without read-modify-write cycles - improves efficiency in protocol stack buffer management.

Applications

Industrial PLC Memory Buffer

Medical Imaging Frame Store

Use Scenario: Storing real-time I/O scan data and ladder logic variables in programmable logic controllers operating continuously at 85 °C ambient.

IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC protection against cosmic-ray-induced bit flips in unattended factory-floor deployments.

Use Value: Prevents silent data corruption in safety-critical control loops; ERR signal triggers diagnostic flagging without CPU interruption.

Use Scenario: Holding uncompressed DICOM image frames during acquisition in portable ultrasound devices with thermal constraints.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to FPGA-based image processors at 100 MHz clock rates.

Use Value: 10 ns t_AA eliminates pipeline stalls; multi-voltage support allows shared 3.3 V rail with ADC and display controllers.

Railway Signaling Controller

Avionics Data Logger

Use Scenario: Caching sensor fusion outputs and route validation tables in EN 5012x-certified train control units exposed to wide thermal cycling.

IC Role / Device Role / Timing Role: ECC-protected working memory for real-time decision engines where bit errors could compromise fail-safe behavior.

Use Value: SER FIT rate < 0.1 FIT/Mb meets SIL-3 reliability targets; 1.0 V data retention supports graceful shutdown during power loss.

Use Scenario: Recording flight parameter telemetry in black-box recorders requiring nonvolatile retention after main power failure.

IC Role / Device Role / Timing Role: High-integrity intermediate storage between sensor interface ASICs and flash write controllers.

Use Value: ERR pin provides traceable evidence of memory integrity events for post-flight forensic analysis and certification reporting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102416BLL-10MLI	No integrated ERR pin; ECC status must be polled via status register; 10 ns access but only 2.5–3.6 V operation.	Lacks hardware interrupt signaling for error events - requires firmware polling and increases CPU load in real-time systems.	Select when cost sensitivity outweighs need for autonomous error notification and multi-voltage flexibility.
AS6C1008-10TIN	No ECC functionality; standard 1M × 8-bit SRAM; 10 ns access, 2.7–5.5 V range; no ERR or byte-enable pins.	Requires external ECC engine or software correction - unsuitable for safety-critical or high-reliability contexts.	Select only for non-critical buffering where ECC is implemented elsewhere in the system architecture.

Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C1061GE-10BVXIT uniquely delivers autonomous ERR signaling, triple-voltage support, and guaranteed single-bit correction without software dependency - critical for certified industrial and transportation systems.

Availability

CY7C1061GE-10BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GE-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY7C1061GE belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for mission-critical industrial and transportation systems demanding hardware ECC, wide temperature operation, and long-term supply assurance.

FAQ

Does CY7C1061GE-10BVXIT support automatic error correction write-back?

No. The device performs single-bit error detection and correction during read cycles only, and does not automatically rewrite corrected data to the memory array. The corrected word appears on the I/O bus, but the original erroneous bit remains uncorrected in the cell until a subsequent write operation overwrites it.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH when a single-bit error is detected and corrected during a read cycle. It must be externally pulled up to V_CC with a 4.7 kΩ resistor to ensure valid logic levels and avoid floating states that could trigger false interrupts in monitoring circuitry.

Can CY7C1061GE-10BVXIT operate across all three voltage ranges simultaneously?

No. Only one V_CC range may be used at a time - the device must be configured for either 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V operation. Electrical characteristics including t_AA, I_CC, and VIH/VIL thresholds are specified separately per range and are not interoperable.

Is the 48-ball VFBGA package (BVXIT) pin-compatible with other CY7C1061GE variants?

Yes, the BVXIT variant uses the same 48-ball VFBGA footprint as BVJXI and BV1XI, but differs in pin configuration: BVXIT has dual CE (CE1/CE2) and ERR enabled, with A19 located at Ball G2. Pin mapping matches Figure 5 in the datasheet, not Figures 1, 2, or 4.

CY7C1061GE-10BVXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 48-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 16Mbit

Memory Organization:: 1M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ns

Access Time:: 10 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (6x8)

CY7C1061GE-10BVXIT FAQ

1.How can I place an order for CY7C1061GE-10BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE-10BVXIT reliable?

The price and inventory of CY7C1061GE-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE-10BVXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GE-10BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE-10BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE-10BVXIT?

CY7C1061GE-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE-10BVXIT?

For technical support, including CY7C1061GE-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE-10BVXIT requirements.

6.How does Aetrix verify that CY7C1061GE-10BVXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE-10BVXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GE-10BVXIT?

All CY7C1061GE-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE-10BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE-10BVXIT part is unused and in its original packaging.

Return procedure for CY7C1061GE-10BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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