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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7C1061GE-10ZSXI

Name: CY7C1061GE-10ZSXI
Brand: Infineon Technologies
SKU: CY7C1061GE-10ZSXI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7C1061GE-10ZSXI

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: CY7C1061GE-10ZSXI.pdf

Description:: IC SRAM 16MBIT PAR 54TSOP II

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Product details

Overview

CY7C1061GE-10ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output signaling correction events. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and supports dual chip enable (CE1/CE2) in a 54-pin TSOP II package - used in industrial control memory buffers requiring data integrity assurance.

For engineers reviewing the CY7C1061GE-10ZSXI datasheet, CY7C1061GE-10ZSXI pinout, CY7C1061GE-10ZSXI application, or CY7C1061GE-10ZSXI equivalent, key selection criteria include ECC-enabled read reliability, multi-voltage support, ERR pin behavior during correction, and TSOP II footprint compatibility with legacy SRAM layouts.

Technical Context

This device implements on-die Hamming-code ECC logic that detects and corrects single-bit errors in real time during read cycles, with no automatic write-back - correction occurs only in the data path to output. The ERR pin asserts high upon successful correction, enabling system-level fault logging without interrupt overhead.

It supports byte-wide writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and operates in both single CE (CE active-low) and dual CE (CE1 low + CE2 high) modes. Input thresholds and output drive strength are specified per V_CC range, ensuring interoperability with mixed-voltage microcontrollers and FPGAs.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16 Mbit (1,048,576 words × 16 bits) - provides full 2 MB of byte-addressable storage space for firmware/data buffering.
Access Time (t_AA)	10 ns at V_CC = 4.5–5.5 V or 2.2–3.6 V - enables direct interface with 100 MHz bus systems without wait states.
ECC Function	On-die single-bit error detection and correction per read cycle - eliminates soft-error-induced crashes in industrial environments.
Supply Voltage Ranges	1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - allows drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V designs.
Standby Current (I_SB2)	20 mA typical - supports low-power hold mode during processor sleep while retaining full memory content.
ERR Pin Behavior	Open-drain output asserted HIGH during single-bit correction - enables direct connection to MCU interrupt or status register without level-shifting.
Package	54-pin TSOP II (22.4 × 11.84 × 1.0 mm) - industry-standard footprint compatible with automated SMT placement and reflow profiles.

Pinout & Package

Package: 54-pin Thin Small Outline Package Type II (TSOP II), body size 22.4 mm × 11.84 mm × 1.0 mm, lead pitch 0.8 mm, RoHS-compliant Pb-free finish.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus supporting full 1M-word addressing; A19 is MSB and determines top half of memory map.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; high-impedance when deselected or during write cycles with WE active.
CE1 / CE2	Dual Chip Enable Inputs	CE1 LOW + CE2 HIGH enables memory; any other combination disables device - supports hierarchical memory decoding.
WE	Write Enable	Active-low control: LOW initiates write; HIGH with OE LOW enables read - ensures clean read/write separation.
OE	Output Enable	Active-low gate for data output drivers; must be LOW for valid reads, independent of CE state in some timing windows.
BHE / BLE	Byte Enable Controls	BHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7) - enables 8-bit peripheral interfacing on 16-bit bus.
ERR	Error Indication Output	Open-drain output asserted HIGH only when single-bit correction occurs - requires external pull-up for logic-level compatibility.
V_CC / V_SS	Power / Ground	Multiple V_CC and V_SS pins distributed across package to minimize noise and IR drop in high-speed operation.

Key Features

Feature	Design Value
Embedded ECC logic	Real-time single-bit error correction per read cycle without CPU intervention - reduces system-level error-handling firmware overhead.
Multi-voltage operation	Three discrete V_CC ranges supported in one device - eliminates need for separate 5 V, 3.3 V, and 1.8 V SRAM SKUs in platform design.
ERR output signaling	Dedicated open-drain pin indicates correction event timing-accurately - enables precise fault correlation with memory access timestamps.
Byte-select write capability	Independent BHE/ BLE controls allow partial-word writes without read-modify-write sequences - improves write efficiency in mixed-data-size applications.
Low standby current	20 mA typical I_SB2 at full V_CC - extends battery life in always-on industrial monitoring nodes during idle periods.

Applications

Industrial PLC Memory Buffer

Medical Imaging Frame Store

Use Scenario: Stores real-time I/O scan data and ladder logic state tables in programmable logic controllers operating in electrically noisy factory environments.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC protecting against cosmic-ray-induced bit flips in long-duration runtime.

Use Value: Prevents undetected memory corruption that could cause unsafe actuator commands - meets IEC 61508 SIL-2 functional safety requirements.

Use Scenario: Holds uncompressed grayscale image frames (e.g., 1024×1024×16-bit) during acquisition in portable ultrasound devices before compression and transmission.

IC Role / Device Role / Timing Role: Low-latency, burst-capable frame buffer interfaced directly to FPGA pixel processors and ADC/DAC chains.

Use Value: 10 ns access time enables real-time pixel streaming at >60 fps; ECC prevents artifact generation from transient radiation in clinical settings.

Avionics Data Logger

Telecom Baseband Processor Cache

Use Scenario: Captures flight sensor telemetry (IMU, pressure, temperature) at 1 kHz sampling rate for post-flight analysis in UAV black box recorders.

IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM (1.0 V data retention) backed by supercapacitor, with ECC ensuring log integrity over extended power-loss intervals.

Use Value: Maintains data fidelity across thermal cycling (-40°C to +85°C) and vibration; ERR pin triggers backup CRC recalculation on correction events.

Use Scenario: Caches protocol stack metadata and packet headers in LTE small-cell baseband processors where deterministic latency is critical.

IC Role / Device Role / Timing Role: Low-jitter, cycle-accurate SRAM accessed by ARM Cortex-A cores and hardware accelerators via AXI-lite bus bridge.

Use Value: Dual CE inputs allow banked memory mapping; multi-voltage support simplifies integration with mixed-domain SoC power domains (1.8 V I/O, 3.3 V analog).

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102416BLL-10MLI	No integrated ECC; requires external logic or software correction - higher BOM cost and latency penalty.	Lacks ERR pin and real-time correction; suitable only where soft errors are statistically negligible (e.g., short-duration consumer devices).	Select only if ECC is implemented externally and board space permits additional logic; not drop-in compatible.
AS6C1008-10TIN	8-Mbit density (512K × 16), no ECC, 10 ns speed, 3.3 V only - half the capacity and no error resilience.	Used in cost-sensitive, non-safety-critical applications like basic display controllers where memory corruption risk is acceptable.	Choose only for legacy 3.3 V-only designs with <1 MB memory requirement and no functional safety mandate.

Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C1061GE-10ZSXI uniquely delivers on-die ECC, multi-voltage support, and ERR signaling in a single 16-Mbit TSOP II package - eliminating external correction logic while enabling compliance with industrial and medical data integrity standards.

Availability

CY7C1061GE-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and telecom baseband processor caches requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1061GE-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.

CY7C1061GE belongs to Infineon's industrial-grade SRAM portfolio, designed specifically for mission-critical embedded systems where data integrity, wide temperature operation, and multi-voltage flexibility are mandatory.

FAQ

Does CY7C1061GE-10ZSXI perform automatic write-back after ECC correction?

No. The device corrects single-bit errors only in the data path to output; corrected data is not written back to the memory array. System firmware must explicitly initiate a write cycle if persistent correction is required. This design minimizes unintended writes and preserves memory endurance.

What is the function of the ERR pin during normal (error-free) read operations?

During error-free reads, the ERR pin remains in high-impedance (floating) state - it is not actively driven low. An external pull-up resistor is required to establish a defined logic HIGH when unasserted. ERR asserts only during actual single-bit correction events.

Can CY7C1061GE-10ZSXI operate reliably at 1.65 V with 10 ns access time?

No. At 1.65–2.2 V, the guaranteed maximum access time is 15 ns (CY7C1061G18 variant). The -10 suffix in CY7C1061GE-10ZSXI specifies 10 ns performance, which is only guaranteed under 2.2–3.6 V or 4.5–5.5 V operation per datasheet Table 1.

How does the dual CE architecture affect timing when interfacing with an FPGA?

CE1 and CE2 form a logical AND gate: memory activates only when CE1 is LOW and CE2 is HIGH. This allows FPGA GPIOs to implement hierarchical chip select decoding - e.g., CE1 tied to address MSBs, CE2 to peripheral enable - reducing external logic count and improving timing margin.

CY7C1061GE-10ZSXI Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 16Mbit

Memory Organization:: 1M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ns

Access Time:: 10 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP II

CY7C1061GE-10ZSXI FAQ

1.How can I place an order for CY7C1061GE-10ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE-10ZSXI reliable?

The price and inventory of CY7C1061GE-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE-10ZSXI is usually 5 days.

3.What payment methods are accepted for CY7C1061GE-10ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE-10ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE-10ZSXI?

CY7C1061GE-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE-10ZSXI?

For technical support, including CY7C1061GE-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE-10ZSXI requirements.

6.How does Aetrix verify that CY7C1061GE-10ZSXI is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE-10ZSXI meets industry standards.

7.What is the process for return or replacement of CY7C1061GE-10ZSXI?

All CY7C1061GE-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE-10ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE-10ZSXI part is unused and in its original packaging.

Return procedure for CY7C1061GE-10ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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