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Infineon Technologies CY7C1061GE-10ZXI
- Part No.:
- CY7C1061GE-10ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1061GE-10ZXI.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,505
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Product details
Overview
CY7C1061GE-10ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and dedicated ERR output pin. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and supports byte-level writes via BHE/ BLE control - deployed in industrial control modules requiring data integrity under extended temperature (-40°C to +85°C).
For engineers reviewing the CY7C1061GE-10ZXI datasheet, CY7C1061GE-10ZXI pinout, CY7C1061GE-10ZXI application, or CY7C1061GE-10ZXI equivalent, this page provides verified package mapping (48-pin TSOP I), ECC behavior confirmation, ERR pin function, dual-voltage operation limits, and validated alternatives for memory subsystems where bit-flip resilience is mandatory.
Technical Context
The CY7C1061GE-10ZXI implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles, signaling correction events via the open-drain ERR output (active HIGH). It does not perform automatic write-back after correction, requiring external logic to re-write corrected data if persistence is needed.
It supports both single CE (CE pin only) and dual CE (CE1/CE2) configurations; the -10ZXI variant uses single CE and includes ERR. Addressing spans A0–A19 (1M words), with I/O0–I/O15 bidirectional data lines, and byte-select control via BHE (upper byte) and BLE (lower byte) for partial-word writes without read-modify-write overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words) - enables full 16-bit data bus interfacing without external width expansion. |
| Access Time (tAA) | 10 ns at VCC = 4.5–5.5 V or 2.2–3.6 V - meets timing budgets for 100 MHz synchronous bus interfaces. |
| ECC Function | On-die single-bit error detection and correction per read access - reduces uncorrectable error rate to <0.1 FIT/Mb per AN88889. |
| Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - allows drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems. |
| Standby Current (ISB2) | 20 mA typical at VCC = 5 V, TA = 25°C - supports low-power hold modes while retaining full SRAM state. |
| ERR Output | Open-drain active-HIGH signal asserted during single-bit correction - enables interrupt-driven error logging without polling. |
| Data Retention | 1.0 V minimum VCC for data retention - permits battery-backed operation down to 1 V during power brownouts. |
Pinout & Package
Package: 48-pin TSOP I (12 × 18.4 × 1 mm), RoHS-compliant, industrial-grade (–40°C to +85°C).
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting 1M-word addressing; A19 is MSB and determines top half of memory map. |
| I/O0–I/O15 | Bidirectional Data Lines | 16-bit parallel data interface; high-impedance when CE or OE inactive - enables bus sharing. |
| CE | Chip Enable (Active LOW) | Primary device select; places all I/Os in high-Z when HIGH - essential for multi-SRAM bus arbitration. |
| OE | Output Enable (Active LOW) | Controls read-data gating; must be LOW during valid address setup to drive I/Os - decouples address latch from output timing. |
| WE | Write Enable (Active LOW) | Initiates write cycle; latches data on I/O lines into addressed location when CE and OE are appropriately asserted. |
| BLE / BHE | Byte Low/High Enable | BLE enables I/O0–I/O7; BHE enables I/O8–I/O15 - permits 8-bit sub-word writes without disturbing adjacent bytes. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit correction - requires external pull-up; used for fault flagging or interrupt generation. |
| VCC / VSS | Power / Ground | Dual VCC pins (pins 24 & 42) reduce IR drop; separate VSS pins (pins 11 & 38) improve noise immunity on data/address buses. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Real-time single-bit error correction per read access - eliminates need for external ECC controller or software overhead. |
| Multi-voltage compatibility | Three independent VCC operating ranges - simplifies migration between 5 V, 3.3 V, and 1.8 V platforms without redesign. |
| Byte-select write capability | Independent BLE/BHE control enables 8-bit writes to upper/lower half of 16-bit word - avoids destructive read-modify-write sequences. |
| ERR output signaling | Dedicated open-drain ERR pin provides hardware-level notification of correction events - supports deterministic error handling in safety-critical firmware. |
| Industrial temperature range | –40°C to +85°C operation with guaranteed 10 ns access at full range - suitable for motor drives, PLCs, and outdoor telecom equipment. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and ladder logic variables in programmable logic controllers with extended uptime requirements. IC Role / Device Role / Timing Role: Primary working memory with ECC-protected read/write cycles synchronized to 10–50 ms scan intervals. Use Value: Prevents silent data corruption in control registers caused by cosmic rays or EMI - maintains functional safety integrity without system reboot. |
Use Scenario: Holds uncompressed grayscale image frames (e.g., 1024×1024×16-bit) during acquisition in portable ultrasound devices. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced directly to FPGA pixel processors at >60 MB/s sustained throughput. Use Value: 10 ns tAA and byte-enable support enable burst-aligned pixel writes; ECC ensures diagnostic image fidelity over 10+ year product lifecycle. |
| Railway Signaling Data Logger | Avionics Sensor Fusion Cache |
|
Use Scenario: Logs GPS timestamps, accelerometer readings, and switch status in EN 5012x-certified train control units exposed to wide thermal cycling. IC Role / Device Role / Timing Role: Nonvolatile shadow memory holding last-known-good state during brownout recovery sequences. Use Value: 1.0 V data retention and –40°C to +85°C rating ensure log integrity across rail depot storage and track-side operation. |
Use Scenario: Caches inertial measurement unit (IMU) and GNSS data streams for Kalman filter computation in flight control computers. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by dual-core ARM Cortex-R5 processors. Use Value: Dual CE option (not used in ZXI but supported by family) allows lock-step memory access arbitration; ERR pin feeds fault-reporting subsystem per DO-254. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-10TIN | No integrated ECC; requires external Hamming encoder/decoder or processor-based correction. | Suitable for cost-sensitive designs where error rate is statistically acceptable and firmware can manage correction. | Select when BOM cost reduction outweighs ECC assurance and board space permits external logic. |
| IS61WV102416BLL-10MLI | 10 ns access, no ERR pin, no on-die ECC - relies on system-level error detection only. | Used in non-safety-critical consumer electronics where ECC is omitted for simplicity. | Choose only if application tolerates uncorrected single-bit errors and lacks interrupt-capable GPIO for ERR monitoring. |
Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE-10ZXI uniquely delivers hardware-accelerated ECC with visible correction feedback, eliminating software latency and external component count - critical for deterministic response in industrial and transportation systems.
Availability
CY7C1061GE-10ZXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging buffers, railway data loggers, and avionics sensor fusion caches requiring stable component supply across long-lifecycle deployments.
Supply support for CY7C1061GE-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, emphasizing automotive, industrial, and IoT applications with rigorous AEC-Q100 and extended-temperature qualification.
CY7C1061GE belongs to Cypress's legacy fast SRAM product line, designed specifically for systems demanding deterministic timing, ECC resilience, and multi-voltage interoperability in harsh environments.
FAQ
Does CY7C1061GE-10ZXI perform automatic write-back after ECC correction?
No. The device detects and corrects single-bit errors during read cycles and asserts the ERR pin, but it does not automatically rewrite the corrected data back to the memory cell. External logic or firmware must initiate a write cycle to restore the corrected value if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that goes HIGH during a single-bit error correction event. It must be externally pulled up to VCC via a 4.7 kΩ resistor. If unused, the pin should be left floating per Note 8 in the datasheet - no internal pull-up or pull-down is provided, and driving it actively may damage the output stage.
Can CY7C1061GE-10ZXI operate at 2.5 V?
Yes. The device supports the 2.2 V to 3.6 V VCC range, and 2.5 V falls within specification. At 2.5 V, typical ICC is 90 mA at 100 MHz (per Table on page 2), and tAA remains 10 ns. All DC and AC parameters are guaranteed across the full 2.2–3.6 V band, including VIH/VIL thresholds and output drive strength.
Is the 48-pin TSOP I package of CY7C1061GE-10ZXI pin-compatible with non-ECC variants like CY7C1061G-10ZXI?
Yes - the ZXI package variant uses identical pinout and footprint between CY7C1061G and CY7C1061GE. The only difference is that pin 1 (labeled ERR in CY7C1061GE-10ZXI) is NC (no connect) in CY7C1061G-10ZXI. No PCB redesign is needed when upgrading to ECC functionality, provided the ERR signal is routed and utilized.
CY7C1061GE-10ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1061GE-10ZXI FAQ
1.How can I place an order for CY7C1061GE-10ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE-10ZXI reliable?
The price and inventory of CY7C1061GE-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE-10ZXI is usually 5 days.
3.What payment methods are accepted for CY7C1061GE-10ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE-10ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE-10ZXI?
CY7C1061GE-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE-10ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE-10ZXI?
For technical support, including CY7C1061GE-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE-10ZXI requirements.
6.How does Aetrix verify that CY7C1061GE-10ZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE-10ZXI meets industry standards.
7.What is the process for return or replacement of CY7C1061GE-10ZXI?
All CY7C1061GE-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE-10ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE-10ZXI part is unused and in its original packaging.
Return procedure for CY7C1061GE-10ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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