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Infineon Technologies CY7C1061GE18-15BV1XI
- Part No.:
- CY7C1061GE18-15BV1XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GE18-15BV1XI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY7C1061GE18-15BV1XI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output signaling. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 15 ns access time, and supports industrial temperature (–40 °C to +85 °C). Used in mission-critical memory buffers for industrial controllers and avionics data recorders where data integrity is non-negotiable.
For engineers reviewing the CY7C1061GE18-15BV1XI datasheet, CY7C1061GE18-15BV1XI pinout, CY7C1061GE18-15BV1XI application, or CY7C1061GE18-15BV1XI equivalent, this page provides verified package mapping (48-ball VFBGA, BV1XI), ECC functional behavior, byte-enable control logic, ERR pin timing behavior, and validated alternatives for SRAM replacement in high-reliability systems.
Technical Context
This device implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when a correctable error is found and corrected - no automatic write-back occurs, requiring host-level handling of correction events.
It supports dual chip enable (CE1/CE2) or single CE configurations, with BHE/ BLE enabling independent upper/lower byte writes and reads. Address space spans A0–A19 (1 M words), and data retention is guaranteed at 1.0 V, enabling low-power suspend modes in battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words) - provides full 16-bit parallel interface without multiplexing or external address latching. |
| Access Time | 15 ns (tAA) at 1.65–2.2 V - enables direct interfacing with legacy microcontrollers and FPGAs running at ≤66 MHz bus clocks. |
| ECC Function | Embedded single-bit error detection and correction per 16-bit word - eliminates need for external ECC logic or software overhead in safety-critical firmware. |
| Supply Voltage Ranges | 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V - allows drop-in replacement across multiple legacy and modern power domains without redesign. |
| Standby Current | ISB2 = 20 mA typical - ensures ultra-low leakage during system sleep while retaining full memory content at 1.0 V. |
| Operating Current | ICC = 90 mA typical at 100 MHz - matches power budgets of industrial SoCs and FPGA-based memory subsystems. |
| Data Retention Voltage | 1.0 V minimum - supports battery-backed operation down to near-dead-cell thresholds in uninterruptible storage applications. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, BV1XI grade (Industrial, –40 °C to +85 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 placed at ball G2 per BV1XI configuration. |
| I/O0–I/O15 | Bidirectional Data Lines | 16-bit parallel data path; high-impedance when CE/OE/BLE/BHE inactive - prevents bus contention during deselect. |
| CE (or CE1/CE2) | Chip Enable Control | Single CE input (BV1XI uses CE-only mode); active-low enables memory access - critical for multi-SRAM arbitration. |
| WE | Write Enable | Active-low signal initiating write cycle; synchronous with address and data setup/hold timing. |
| OE | Output Enable | Active-low control for read data output; decouples memory read timing from system clock domain. |
| BHE / BLE | Byte Enable Controls | Independent upper (I/O8–I/O15) and lower (I/O0–I/O7) byte gating - enables 8-bit peripheral compatibility on 16-bit bus. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during successful single-bit correction - requires external pull-up; signals correction event to host controller. |
| VCC / VSS | Power / Ground | Dual VCC balls (balls E1, F1) and dual VSS balls (balls D1, H1) reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| On-die ECC engine | Corrects one bit per 16-bit word without CPU intervention - reduces firmware complexity and latency in fault-tolerant systems. |
| Multi-voltage support | Three discrete VCC ranges allow reuse across 1.8 V, 3.3 V, and 5 V platforms - simplifies BOM consolidation and design migration. |
| ERR pin with defined assertion timing | ERR goes HIGH within tAA after valid address and OE assertion - enables deterministic error logging and real-time diagnostics. |
| Low-voltage data retention | Guaranteed 1.0 V retention - supports seamless transition to backup power without data loss during brown-out conditions. |
| TTL-compatible I/O | VIH/VIL thresholds match legacy 5 V TTL logic families - eliminates level-shifter requirements in mixed-voltage industrial backplanes. |
Applications
| Avionics Data Recorder | Railway Signaling Controller |
|---|---|
|
Use Scenario: Continuous high-integrity logging of flight parameters with radiation-induced soft-error mitigation. IC Role / Device Role / Timing Role: Primary volatile buffer with real-time ECC correction between sensor acquisition FIFO and flash storage controller. Use Value: Eliminates need for redundant memory banks or periodic scrubbing - reduces PCB area and power by 35% versus dual-SRAM schemes. |
Use Scenario: Safe state storage for interlocking logic in EN 5012x-certified signaling hardware. IC Role / Device Role / Timing Role: Fault-tolerant working memory for SIL-4 PLC core, interfaced via 16-bit parallel bus to ARM Cortex-R5F. Use Value: Meets SER FIT <0.1 FIT/Mb requirement per AN88889 - satisfies IEC 61508 hardware fault tolerance metrics without external ECC ASIC. |
| Medical Imaging Console | Industrial CNC Motion Controller |
|
Use Scenario: Frame buffering for real-time ultrasound image reconstruction pipelines under EMI-heavy operating environments. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for DSP co-processor, accessed at 66 MHz with burst reads. Use Value: 15 ns tAA and 20 mA ISB2 enable deterministic frame capture timing while minimizing thermal load in sealed enclosures. |
Use Scenario: Position register cache in servo drive firmware executing nanosecond-precision motion profiles. IC Role / Device Role / Timing Role: Dual-port accessible memory (via CE/OE separation) for simultaneous host command ingestion and real-time trajectory update. Use Value: BHE/ BLE byte enables allow 8-bit microcontroller to update axis-specific registers without disturbing adjacent 16-bit motion vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-15BLI | No integrated ERR pin; ECC status must be polled via status register; 15 ns access, same 48-ball VFBGA. | Lacks real-time error indication - requires firmware polling loop, increasing interrupt latency in time-critical systems. | Select when cost sensitivity outweighs need for deterministic error signaling and host interrupt response is >1 µs. |
| Micron MT45W8MW16BGX-15IT:D | DDR2 SDRAM with optional on-die ECC; 15 ns tAA not applicable - CAS latency dominates timing; different interface protocol. | Requires DDR controller, PHY, and refresh management - incompatible with simple parallel bus microcontrollers. | Select only for new designs with DDR-capable SoC and willingness to absorb full DDR stack complexity and power overhead. |
Compared with IS61WV102416BLL-15BLI and MT45W8MW16BGX-15IT:D, CY7C1061GE18-15BV1XI uniquely delivers pin-compatible ECC correction with hardware ERR signaling - eliminating firmware polling and DDR infrastructure while maintaining legacy parallel bus simplicity.
Availability
CY7C1061GE18-15BV1XI is available at Aetrix Electronics and suitable for avionics data recorders, railway signaling controllers, medical imaging consoles, and industrial CNC motion controllers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1061GE18-15BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.
CY7C1061GE18-15BV1XI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and aerospace applications demanding error-resilient, low-power, parallel-interface memory with long-term supply assurance.
FAQ
Does CY7C1061GE18-15BV1XI support automatic error correction write-back?
No. The device performs single-bit error detection and correction during read cycles but does not automatically write the corrected data back to the memory array. Host firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that asserts HIGH only when a single-bit error is detected and corrected during a read access. If unused, it must be left floating per Note 6 in the datasheet; adding an external pull-up resistor is required only when actively monitoring correction events. Its timing aligns with tAA, ensuring deterministic host response windows.
Can CY7C1061GE18-15BV1XI operate across all three voltage ranges simultaneously?
No. The device must be powered from exactly one of the three supported VCC ranges (1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V) at any given time. Internal voltage regulation and I/O threshold logic are calibrated per range; mixing voltages violates absolute maximum ratings and may cause functional failure or accelerated wear.
Is the 48-ball VFBGA (BV1XI) pinout compatible with other CY7C1061G(E) variants?
Yes - the BV1XI package shares identical ball map and signal assignment with other 48-ball VFBGA versions of CY7C1061GE, including BVJXI and BVXI, differing only in A19 placement (G2 vs. H6) and CE configuration (single vs. dual). Pin compatibility is verified in Figures 4–6 of the datasheet and confirmed by Infineon's ordering code definitions.
CY7C1061GE18-15BV1XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE18-15BV1XI FAQ
1.How can I place an order for CY7C1061GE18-15BV1XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE18-15BV1XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE18-15BV1XI reliable?
The price and inventory of CY7C1061GE18-15BV1XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE18-15BV1XI is usually 5 days.
3.What payment methods are accepted for CY7C1061GE18-15BV1XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE18-15BV1XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE18-15BV1XI?
CY7C1061GE18-15BV1XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE18-15BV1XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE18-15BV1XI?
For technical support, including CY7C1061GE18-15BV1XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE18-15BV1XI requirements.
6.How does Aetrix verify that CY7C1061GE18-15BV1XI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE18-15BV1XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE18-15BV1XI meets industry standards.
7.What is the process for return or replacement of CY7C1061GE18-15BV1XI?
All CY7C1061GE18-15BV1XI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE18-15BV1XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE18-15BV1XI part is unused and in its original packaging.
Return procedure for CY7C1061GE18-15BV1XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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