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Infineon Technologies CY7C1061GE18-15BV1XIT
- Part No.:
- CY7C1061GE18-15BV1XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GE18-15BV1XIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,655
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Product details
Overview
CY7C1061GE18-15BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output signaling. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 15 ns access time, and supports industrial temperature (–40 °C to +85 °C). Used in mission-critical embedded controllers requiring data integrity, such as industrial PLCs and avionics memory buffers.
For engineers reviewing the CY7C1061GE18-15BV1XIT datasheet, CY7C1061GE18-15BV1XIT pinout, CY7C1061GE18-15BV1XIT application, or CY7C1061GE18-15BV1XIT equivalent, key selection factors include ECC-enabled reliability, dual/single CE configuration flexibility, 48-ball VFBGA (BV1XI) package compatibility, and support for byte-level writes via BHE/BLE control signals.
Technical Context
This SRAM integrates on-die ECC logic that detects and corrects single-bit errors during read cycles, asserting the ERR pin high upon correction. It does not perform automatic write-back, requiring external handling of corrected data if retention is needed.
The device supports both single CE (CE pin only) and dual CE (CE1/CE2) configurations, with pinout variants accommodating A19 placement at Ball G2 (BV1XI) and differing ERR inclusion. Byte enable logic (BHE/BLE) enables independent upper/lower 8-bit writes without full-word access overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); provides full-word parallel interface for microprocessor co-processor or cache buffer use. |
| Access Time (tAA) | 15 ns at 1.65–2.2 V; ensures timing compliance with 66 MHz bus interfaces under industrial voltage/temperature conditions. |
| ECC Function | Single-bit error detection and correction per read cycle; ERR pin asserts high to signal correction event-no auto-writeback. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; enables drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems. |
| Standby Current (ISB2) | 20 mA typical at VCC = 1.8 V / 3 V / 5 V; supports low-power hold mode during processor sleep without external power gating. |
| Data Retention Voltage | 1.0 V minimum; allows memory state preservation during brown-out or controlled power-down sequences. |
| Operating Temperature | –40 °C to +85 °C (Industrial grade); validated for continuous operation in factory automation and transportation electronics. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, BV1XI grade (single chip enable, ERR pin present, A19 at Ball G2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE | Chip Enable (active low) | Enables memory access; all I/O enter high-Z when CE is high-critical for bus arbitration in multi-device systems. |
| WE | Write Enable (active low) | Controls write cycle initiation; combined with OE and address setup, defines write window timing for reliable data capture. |
| OE | Output Enable (active low) | Activates output drivers; used with CE to gate read data onto I/O0–I/O15 without contention during shared-bus reads. |
| BHE / BLE | Byte High/Low Enable (active low) | Allows independent 8-bit writes: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7-reduces bus turnaround latency vs. full-word writes. |
| ERR | Error indication output | Open-drain output asserted high during single-bit ECC correction; requires external pull-up and interrupt routing for error logging. |
| A0–A19 | Address inputs | 20-bit address bus supporting 1M-word addressing; A19 placed at Ball G2 in BV1XI variant for layout compatibility with Cypress/Infineon reference designs. |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface with TTL-compatible thresholds; supports mixed-voltage interfacing when VCC matches host logic family. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Real-time single-bit error correction per read cycle with ERR flag-eliminates need for external ECC controller in safety-critical firmware stacks. |
| Multi-voltage operation | Three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow reuse across 1.8 V microcontrollers, 3.3 V FPGAs, and legacy 5 V backplanes. |
| Low-power standby mode | ISB2 = 20 mA typical enables >10-year data retention at 1.0 V supply-ideal for battery-backed industrial logging applications. |
| Byte-selectable write architecture | BHE/BLE pins enable true 8-bit sub-word writes without masking logic, reducing bus bandwidth usage by up to 50% in partial-update scenarios. |
| VFBGA package (BV1XI) | 48-ball 0.5 mm pitch VFBGA with A19 at Ball G2 matches Infineon's recommended layout for thermal and signal integrity in dense PCBs. |
Applications
| Industrial PLC Memory Buffer | Avionics Data Recorder |
|---|---|
|
Use Scenario: Storing real-time sensor fusion outputs and control command history in programmable logic controllers with no external ECC support. IC Role / Device Role / Timing Role: Primary working memory with on-the-fly bit-error correction to prevent corrupted ladder logic execution or watchdog timeout triggers. Use Value: Eliminates requirement for redundant memory mirroring or software-based checksum validation-reducing BOM cost and firmware complexity. |
Use Scenario: Capturing flight telemetry (attitude, pressure, GPS) in certified airborne recorders where uncorrected memory errors violate DO-178C traceability requirements. IC Role / Device Role / Timing Role: Fault-tolerant data buffer between ADC interface and secure flash storage, with ERR pin wired to system health monitor. Use Value: Meets SER FIT rate <0.1 FIT/Mb (per AN88889), satisfying RTCA DO-254 hardware assurance level DAL-B for memory subsystems. |
| Railway Signaling Controller | Medical Imaging Subsystem Cache |
|
Use Scenario: Holding interlocking logic states and track occupancy tables in EN 5012x-compliant signaling cabinets exposed to EMI-rich traction environments. IC Role / Device Role / Timing Role: Safety-critical volatile memory with deterministic 15 ns access and ECC-triggered diagnostic interrupts for CENELEC SIL-3 compliance. Use Value: Enables single-point failure mitigation without increasing system clock latency-preserving hard real-time response under electromagnetic disturbance. |
Use Scenario: Acting as line-buffer cache between FPGA-based image preprocessor and DDR3 frame store in portable ultrasound units. IC Role / Device Role / Timing Role: Low-latency, low-power scratchpad memory supporting burst-mode pixel streaming at 100 MHz with ECC-protected intermediate results. Use Value: Prevents artifact generation from memory soft errors in grayscale rendering pipelines-avoiding false-positive diagnostics in clinical interpretation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-15BLI | No integrated ECC; requires external error detection logic or software correction; 15 ns access, 3.3 V only. | Lacks hardware-level error signaling; unsuitable for safety-certified systems without added validation layers. | Select only for cost-sensitive non-safety applications where ECC is handled at firmware level. |
| AS6C1008-15TIN | 1M × 8-bit organization; no ECC; 15 ns, 5 V only; TSOP-32 package. | Half the data width requires two devices for 16-bit bus; no ERR pin or byte-enable granularity. | Use only in legacy 5 V systems with space budget for dual-SRAM layout and no ECC requirement. |
Compared with IS61WV102416BLL-15BLI and AS6C1008-15TIN, CY7C1061GE18-15BV1XIT uniquely delivers integrated ECC with ERR signaling, multi-voltage support, and 16-bit bus efficiency-reducing system-level complexity for functional safety and mixed-voltage designs.
Availability
CY7C1061GE18-15BV1XIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics data recorders, railway signaling controllers, and medical imaging subsystem caches requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1061GE18-15BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial-grade performance.
CY7C1061GE18-15BV1XIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems where data corruption must be detected and corrected in hardware-targeting industrial automation, aerospace, and rail transport applications.
FAQ
Does CY7C1061GE18-15BV1XIT support automatic error correction write-back?
No. The device detects and corrects single-bit errors during read cycles and asserts the ERR pin, but it does not automatically write the corrected data back to memory. External logic or firmware must capture the corrected word and initiate a separate write cycle if persistent correction is required.
What is the function of the ERR pin, and how should it be interfaced?
The ERR pin is an open-drain output that goes high during a single-bit ECC correction event. It must be pulled up externally (typically 10 kΩ to VCC) and connected to an interrupt input or status register. It remains high for the duration of the read cycle in which correction occurs and does not latch.
Can CY7C1061GE18-15BV1XIT operate at 2.5 V?
Yes. The device supports the 2.2 V–3.6 V VCC range, and 2.5 V falls within specification. At 2.5 V, it operates with tAA = 10 ns (not 15 ns), ICC = 90 mA typical at 100 MHz, and meets all DC/AC electrical characteristics per the datasheet's 2.2–3.6 V column.
Is the 48-ball VFBGA (BV1XI) package RoHS-compliant and lead-free?
Yes. The "XIT" suffix in CY7C1061GE18-15BV1XIT explicitly denotes Pb-free (lead-free) construction per JEDEC J-STD-609, with matte tin surface finish and compliant with EU RoHS Directive 2011/65/EU and China RoHS.
CY7C1061GE18-15BV1XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE18-15BV1XIT FAQ
1.How can I place an order for CY7C1061GE18-15BV1XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE18-15BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE18-15BV1XIT reliable?
The price and inventory of CY7C1061GE18-15BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE18-15BV1XIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GE18-15BV1XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE18-15BV1XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE18-15BV1XIT?
CY7C1061GE18-15BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE18-15BV1XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE18-15BV1XIT?
For technical support, including CY7C1061GE18-15BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE18-15BV1XIT requirements.
6.How does Aetrix verify that CY7C1061GE18-15BV1XIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE18-15BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE18-15BV1XIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GE18-15BV1XIT?
All CY7C1061GE18-15BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE18-15BV1XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE18-15BV1XIT part is unused and in its original packaging.
Return procedure for CY7C1061GE18-15BV1XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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