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Infineon Technologies CY7C1061GE18-15BVXIT

Part No.:
CY7C1061GE18-15BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061GE18-15BVXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,683

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Product details

Overview

CY7C1061GE18-15BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output signaling correction events. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), supports 15 ns access time, and delivers 90 mA typical active current at 100 MHz - deployed in industrial control modules requiring data integrity under extended temperature cycling.

For engineers reviewing the CY7C1061GE18-15BVXIT datasheet, CY7C1061GE18-15BVXIT pinout, CY7C1061GE18-15BVXIT application, or CY7C1061GE18-15BVXIT equivalent, key selection criteria include ECC-enabled reliability for mission-critical memory buffers, dual-chip-enable support for multi-bank addressing, 1.0 V data retention capability, and compatibility with legacy 48-ball VFBGA footprint designs.

Technical Context

This SRAM implements on-die ECC logic that detects and corrects single-bit errors during read cycles without automatic write-back, signaled via the dedicated ERR output pin asserted high. Its architecture supports byte-level writes using BHE/ BLE controls and full 16-bit parallel I/O access via I/O0–I/O15.

The device offers three selectable VCC operating ranges with corresponding speed grades: 15 ns at 1.65–2.2 V, 10 ns at 2.2–3.6 V and 4.5–5.5 V. Standby current is minimized to 20 mA typical in ISB2 mode, and it maintains data retention down to 1.0 V - enabling low-power hold states in battery-backed systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits) - provides full-word parallel access for microcontroller or FPGA data buffering.
Access Time 15 ns max at 1.65–2.2 V - ensures timing compliance in 66.7 MHz bus interfaces with adequate setup/hold margins.
ECC Function Single-bit error detection and correction per read cycle - eliminates soft-error-induced crashes in industrial environments.
Supply Voltage Ranges 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - enables drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-voltage 1.8 V systems.
Standby Current 20 mA typical (ISB2) - reduces power draw during idle periods in always-on edge nodes.
Data Retention Voltage 1.0 V minimum - sustains memory contents during brown-out conditions or controlled power-down sequences.
ERR Output Dedicated open-drain output indicating corrected single-bit errors - enables system-level fault logging without CPU polling overhead.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word decoding; A19 placement varies by variant (Ball G2 or H6).
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; byte-accessible via BHE (I/O8–I/O15) and BLE (I/O0–I/O7).
CE / CE1 & CE2 Chip Enable Control Single CE (active LOW) or dual CE1/CE2 (CE1=LOW & CE2=HIGH) for flexible bank selection in multi-SRAM systems.
WE Write Enable Active-LOW signal initiating write cycles; synchronized with address and data setup timing.
OE Output Enable Active-LOW control for placing I/O pins in high-impedance state or enabling read data output.
BHE / BLE Byte Enable Controls Independent gating of upper/lower bytes - enables mixed-width peripheral interfacing without glue logic.
ERR Error Indication Output Open-drain output asserted HIGH during single-bit correction - requires external pull-up for system interrupt generation.
VCC / VSS Power & Ground Dual VCC balls (Balls E1, F1) and multiple VSS balls (A1, D1, E2, etc.) ensure low-impedance supply routing and noise immunity.

Key Features

Feature Design Value
Embedded ECC Logic On-die Hamming-code-based correction circuitry eliminates need for external ECC controllers or software overhead.
TTL-Compatible I/O Input thresholds and output drive levels match standard TTL families - simplifies integration with legacy 5 V or mixed-voltage logic.
Dual Chip Enable Option CE1/CE2 logic allows hierarchical memory mapping in multi-bank architectures without address decoder complexity.
Low-Voltage Data Retention Maintains stored data at 1.0 V - enables seamless transition to backup power sources during main supply failure.
Multiple Package Options 48-ball VFBGA (this variant), 48-pin TSOP I, and 54-pin TSOP II - supports layout flexibility across space-constrained and board-level designs.

Applications

Industrial PLC Memory Buffer Medical Imaging Frame Store

Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers operating continuously at –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution and sensor register caching with deterministic 15 ns access.

Use Value: Embedded ECC prevents silent data corruption from cosmic radiation or EMI in factory-floor environments - eliminating unexplained controller resets.

Use Scenario: Temporary storage of uncompressed DICOM image frames during acquisition in portable ultrasound systems.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced directly to FPGA pixel processors with burst-mode reads/writes.

Use Value: 16-bit parallel bus and 10–15 ns access enable real-time pixel streaming without FIFO bottlenecks or frame drops.

Railway Signaling Data Logger Avionics Health Monitor Cache

Use Scenario: Logging train position, speed, and brake status over extended duty cycles with battery backup during power loss.

IC Role / Device Role / Timing Role: Nonvolatile cache holding last-known operational state before shutdown, retained at 1.0 V.

Use Value: 1.0 V data retention allows safe state capture during brown-out events - critical for post-failure diagnostics and regulatory compliance.

Use Scenario: Storing sensor fusion outputs and flight control telemetry in certified airborne computing modules.

IC Role / Device Role / Timing Role: Safety-critical memory buffer where bit errors could impact control loop integrity.

Use Value: SER FIT rate <0.1 FIT/Mb ensures statistically negligible uncorrectable error probability over 20-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102416BLL-15BLI No integrated ECC; requires external error handling or software mitigation. Suitable only where system-level ECC is already implemented or soft errors are non-critical. Select when cost sensitivity outweighs reliability requirements and board space permits external ECC logic.
Microchip 23LC1024-I/P Serial SPI interface (vs. parallel); 1 Mbit density (1/16th capacity); no ECC. Used in low-pin-count, low-bandwidth applications where memory bandwidth is not limiting. Choose only for space-constrained designs accepting serial latency and reduced capacity - not a functional substitute.

Compared with CY7C1061GE18-15BVXIT, the ISSI part lacks on-die ECC and demands external fault management, while the Microchip SPI SRAM trades parallel throughput and ECC for pin count reduction - neither matches the combination of 16-Mbit density, 15 ns access, and hardware ECC in a VFBGA package.

Availability

CY7C1061GE18-15BVXIT is available at Aetrix Electronics and suitable for industrial control systems, medical imaging subsystems, railway data loggers, and avionics health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GE18-15BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade performance.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity memory applications where data corruption must be prevented without software intervention or external ECC circuitry.

FAQ

Does CY7C1061GE18-15BVXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations and asserts the ERR pin, but does not perform automatic write-back to the memory array. System firmware must handle any required corrective writes if persistent error logging or proactive scrubbing is needed.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that goes HIGH when a single-bit error is detected and corrected during a read cycle. It must be externally pulled up to VCC with a 4.7 kΩ resistor to generate a valid logic HIGH signal usable for interrupt generation or status monitoring.

Can CY7C1061GE18-15BVXIT operate across all three voltage ranges simultaneously?

No. The device must be powered within one of the three specified VCC ranges (1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V) at a time. Voltage range selection determines maximum operating frequency and timing parameters - mixing ranges is not supported and may cause functional failure.

Is the 48-ball VFBGA package of CY7C1061GE18-15BVXIT compatible with CY7C1061G variants?

Yes - mechanical and pinout compatibility is maintained across CY7C1061G and CY7C1061GE variants in the same package type (e.g., BVXIT). However, the ERR pin is present only on GE versions; on G variants, that ball is designated NC and must remain unconnected.

CY7C1061GE18-15BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061GE18-15BVXIT FAQ

1.How can I place an order for CY7C1061GE18-15BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE18-15BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE18-15BVXIT reliable?

The price and inventory of CY7C1061GE18-15BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE18-15BVXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GE18-15BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE18-15BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE18-15BVXIT?

CY7C1061GE18-15BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE18-15BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE18-15BVXIT?

For technical support, including CY7C1061GE18-15BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE18-15BVXIT requirements.

6.How does Aetrix verify that CY7C1061GE18-15BVXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE18-15BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE18-15BVXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GE18-15BVXIT?

All CY7C1061GE18-15BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE18-15BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE18-15BVXIT part is unused and in its original packaging.

Return procedure for CY7C1061GE18-15BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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