My Inquiry
My Account
Infineon Technologies CY7C1061GE18-15ZSXI
- Part No.:
- CY7C1061GE18-15ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1061GE18-15ZSXI.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,974
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1061GE18-15ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and dual chip enable (CE1/CE2). It operates across 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V supply ranges, delivers 15 ns access time (tAA), and features an ERR output pin for real-time single-bit error detection and correction-used in industrial control memory buffers requiring data integrity.
For engineers reviewing the CY7C1061GE18-15ZSXI datasheet, CY7C1061GE18-15ZSXI pinout, CY7C1061GE18-15ZSXI application, or CY7C1061GE18-15ZSXI equivalent, this page provides verified package mapping (54-pin TSOP II), ECC functional behavior, byte-enable write control (BHE/BLE), ERR pin timing behavior, and voltage-flexible operation across three VCC ranges.
Technical Context
The CY7C1061GE18-15ZSXI implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without external circuitry; correction occurs transparently and does not require CPU intervention or write-back. The ERR pin asserts high only when a correctable 1-bit error is found in the accessed word.
It supports dual chip enable (CE1/CE2) logic per TSOP II pinout (ZSXI), where CE = CE1 LOW AND CE2 HIGH enables the device; OE controls output enable, WE controls write strobe, and BHE/BLE independently gate upper/lower byte writes to I/O8–I/O15 and I/O0–I/O7 respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); supports full-word or byte-level access via BHE/BLE. |
| Access Time (tAA) | 15 ns at 1.65–2.2 V; defines maximum clock-to-data-read delay in synchronous systems. |
| ECC Function | Embedded single-bit error detection and correction per 16-bit word; no external logic required. |
| ERR Pin Behavior | Open-drain output asserted HIGH only during read cycle when 1-bit error is corrected; requires pull-up. |
| Supply Voltage Ranges | Three independent operating ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; enables legacy and low-voltage system integration. |
| Standby Current (ISB2) | 20 mA typical at VCC max and f = 0; enables low-power retention in battery-backed applications. |
| Data Retention | 1.0 V minimum VCC for data hold; allows ultra-low-power retention mode with external bias control. |
Pinout & Package
Package: 54-pin TSOP II (22.4 mm × 11.84 mm × 1.0 mm), RoHS-compliant, lead-free (ZSXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE1 / CE2 | Dual chip enable inputs | Enable logic requires CE1 = LOW AND CE2 = HIGH; enables robust isolation in multi-SRAM systems. |
| WE | Write enable input | Active-low control for write cycles; latches address and data on falling edge. |
| OE | Output enable input | Active-low control for read data output; places I/Os in high-Z when deasserted. |
| BHE / BLE | Byte high/low enable inputs | Independent gating of upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes during write/read. |
| ERR | Error indication output | Open-drain signal asserted HIGH only upon successful 1-bit correction; requires external pull-up. |
| A0–A19 | Address inputs | 20-bit address bus supporting full 1M-word addressing; A19 is MSB. |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface with TTL-compatible thresholds; supports byte-wide transfers. |
Key Features
| Feature | Design Value |
|---|---|
| Triple-voltage operation | Single part supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails-reduces BOM count across mixed-voltage designs. |
| Hardware ECC with ERR flag | On-die correction eliminates need for external ECC logic or software overhead; ERR pin enables system-level error logging. |
| Low ISB2 standby current | 20 mA typical at max VCC enables extended retention in power-constrained industrial controllers without external regulators. |
| Byte-selectable write architecture | BHE/BLE allow independent 8-bit writes-critical for efficient firmware updates and partial memory writes in embedded bootloaders. |
| TSOP II mechanical compatibility | 54-pin ZSXI footprint matches industry-standard layout for drop-in replacement in existing PCBs with minimal redesign. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Storing real-time sensor fusion data in programmable logic controllers with extended temperature operation (–40 °C to +85 °C). IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC protecting against cosmic-ray-induced bit flips in long-duration runtime. Use Value: Prevents undetected memory corruption in safety-critical control loops; ERR pin triggers diagnostic logging before fault escalation. |
Use Scenario: Temporary frame storage in portable ultrasound devices requiring fast 16-bit parallel access and low standby power. IC Role / Device Role / Timing Role: Low-latency pixel buffer enabling real-time image stitching with 15 ns tAA and 1.0 V data retention mode. Use Value: Enables battery-powered operation with <20 mA ISB2; byte-enable support reduces EMI during partial frame refreshes. |
| Railway Signaling Data Cache | Avionics Display Controller Buffer |
|
Use Scenario: Caching configuration tables and route logic in EN 5012x-certified signaling hardware with wide-input voltage tolerance. IC Role / Device Role / Timing Role: Triple-rail SRAM allowing direct connection to 1.8 V FPGA I/O, 3.3 V microcontroller, or 5 V legacy backplane. Use Value: Eliminates level-shifter components; ECC ensures SIL-3 compliance for data integrity in fail-safe decision paths. |
Use Scenario: Holding rendered GUI layers in cockpit display units where radiation-induced soft errors must be mitigated. IC Role / Device Role / Timing Role: ECC-protected SRAM interfacing to ARINC 661-compliant graphics processors via parallel 16-bit bus. Use Value: ERR assertion feeds into health monitoring subsystem; 15 ns access meets real-time rendering latency budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-15TIN | No integrated ECC; requires external Hamming logic or software correction; 15 ns access, 1M × 16-bit, 3.3 V only. | Lacks hardware error flag; unsuitable for systems requiring autonomous error reporting without host CPU involvement. | Select only if ECC is implemented externally and voltage flexibility is not required. |
| IS61WV102416BLL-15TLI | 15 ns access, 1M × 16-bit, 3.3 V, no ECC; low-power CMOS design with 12 mA ISB2. | Lower standby current but zero error resilience; requires full system-level error handling architecture. | Choose when cost and power dominate over reliability; not a functional substitute for ECC-critical use cases. |
Compared with AS7C31026B-15TIN and IS61WV102416BLL-15TLI, CY7C1061GE18-15ZSXI uniquely delivers on-die ECC with ERR signaling and triple-voltage support-enabling single-part compliance with IEC 61508 SIL-2 and DO-254 DAL-B requirements where memory integrity is non-negotiable.
Availability
CY7C1061GE18-15ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, railway signaling data caches, and avionics display controller buffers requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1061GE18-15ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including industrial-grade SRAMs with ECC and extended temperature support.
CY7C1061GE18-15ZSXI belongs to the Cypress SRAM product line originally designed for mission-critical embedded systems demanding data integrity, voltage flexibility, and long-term industrial availability.
FAQ
Does CY7C1061GE18-15ZSXI support automatic error correction without CPU intervention?
Yes. The device performs single-bit error detection and correction entirely in hardware during read cycles. No CPU action or software routine is required-the corrected data appears on I/O lines, and the ERR pin signals the event. Correction occurs transparently and does not stall the memory access.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that asserts HIGH only when a correctable 1-bit error is detected and fixed in the currently accessed 16-bit word. It must be externally pulled up to VCC with a 4.7 kΩ resistor; leaving it floating or tying it directly to VCC will prevent proper signaling.
Can CY7C1061GE18-15ZSXI operate at 2.5 V, and which VCC range applies?
Yes. At 2.5 V, it operates within the 2.2–3.6 V VCC range specified in the datasheet. This enables compatibility with 2.5 V and 3.3 V systems. Electrical characteristics-including 15 ns tAA, 90 mA ICC typical, and 20 mA ISB2-are guaranteed under those conditions per the published AC/DC specs.
Is the CY7C1061GE18-15ZSXI pin-compatible with non-ECC variants like CY7C1061G18-15ZSXI?
No. While both share the 54-pin TSOP II (ZSXI) package, CY7C1061GE18-15ZSXI uses pins 31 and 32 for CE1 and CE2 respectively, whereas the non-ECC CY7C1061G18-15ZSXI assigns those pins to NC and A19. Direct substitution would cause functional failure due to misrouted chip enable signals.
CY7C1061GE18-15ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1061GE18-15ZSXI FAQ
1.How can I place an order for CY7C1061GE18-15ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE18-15ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE18-15ZSXI reliable?
The price and inventory of CY7C1061GE18-15ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE18-15ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C1061GE18-15ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE18-15ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE18-15ZSXI?
CY7C1061GE18-15ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE18-15ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE18-15ZSXI?
For technical support, including CY7C1061GE18-15ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE18-15ZSXI requirements.
6.How does Aetrix verify that CY7C1061GE18-15ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE18-15ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE18-15ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C1061GE18-15ZSXI?
All CY7C1061GE18-15ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE18-15ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE18-15ZSXI part is unused and in its original packaging.
Return procedure for CY7C1061GE18-15ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1061GE18-15ZSXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
