Infineon Technologies CY7C1061GE30-10BV1XI

Overview

CY7C1061GE30-10BV1XI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 2.2–3.6 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and is packaged in 48-ball VFBGA (6 × 8 × 1.0 mm) with single chip enable and A19 at ball G2 - used in mission-critical memory buffers for telecom baseband processors.

For engineers reviewing the CY7C1061GE30-10BV1XI datasheet, CY7C1061GE30-10BV1XI pinout, CY7C1061GE30-10BV1XI application, or CY7C1061GE30-10BV1XI equivalent, this page delivers verified package mapping, ECC behavior under read cycles, byte-enable control logic (BHE/ BLE), ERR pin assertion timing, and voltage-specific ICC/ISB2 current profiles - all confirmed from Infineon's Rev. *T datasheet (001-81540).

Technical Context

This SRAM implements full-cycle ECC correction on every read access: when a single-bit error is detected in the accessed 16-bit word, the corrected data is placed on I/O[15:0] and ERR asserts high for one clock cycle. The device supports TTL-compatible signaling and dual-voltage operation (2.2–3.6 V), with separate BHE/ BLE controls enabling independent upper- and lower-byte writes without full-word overhead.

It uses asynchronous parallel interface with CE/OE/WE control hierarchy: CE enables chip access, OE gates output drivers, and WE determines write direction; all I/Os enter high-Z state when CE is deasserted or OE/ BLE/ BHE are inactive. The ERR pin is strictly output-only and must be left floating if unused.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 array, 0.8 mm ball pitch, 1.0 mm height, JEDEC MO-276 compliant. Pinout corresponds to "Single Chip Enable with ERR, Address MSB A19 at Ball G2" configuration (Package/Grade ID: BV1XI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE30-10BV1XI uniquely integrates ECC correction, ERR signaling, and 2.2–3.6 V operation in a compact VFBGA - eliminating external logic, reducing BOM count, and enabling direct compliance with functional safety targets.

Availability

CY7C1061GE30-10BV1XI is available at Aetrix Electronics and suitable for telecom baseband processing, industrial PLC data buffering, medical imaging subsystem caching, and avionics flight control memory requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC performance.

Supply support for CY7C1061GE30-10BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and high-reliability memory solutions.

CY7C1061GE30-10BV1XI belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for systems demanding deterministic timing, hardware ECC, and industrial-grade robustness in safety-critical memory applications.

FAQ

Does CY7C1061GE30-10BV1XI perform automatic write-back after ECC correction?

No. Per datasheet Note 1, this device does not support automatic write-back on error detection. Corrected data appears on I/O[15:0] during the read cycle, but the original erroneous word remains unmodified in the memory array unless explicitly rewritten by the host controller.

What is the function of the ERR pin during normal (error-free) read operations?

The ERR pin remains in high-impedance (floating) state during error-free reads. It only asserts HIGH for exactly one tAA cycle (10 ns) when a single-bit error is both detected and corrected in the accessed 16-bit word - no assertion occurs for multi-bit errors or no errors.

Can CY7C1061GE30-10BV1XI operate at 2.5 V and still achieve 10 ns access time?

Yes. The "30" in the part number denotes the 2.2–3.6 V voltage range, and the "10" specifies 10 ns access time. Datasheet Table on page 2 confirms tAA = 10 ns is guaranteed across the full 2.2–3.6 V range, including 2.5 V nominal rail operation.

Is the 48-ball VFBGA package (BV1XI) RoHS-compliant and lead-free?

Yes. The "BV1XI" suffix indicates Pb-free (lead-free) construction per JEDEC J-STD-609, and the device is fully RoHS-compliant as confirmed in Infineon's ordering information section (page 17) and package diagrams (page 20).