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Infineon Technologies CY7C1061GE30-10BV1XIT
- Part No.:
- CY7C1061GE30-10BV1XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GE30-10BV1XIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,977
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Product details
Overview
CY7C1061GE30-10BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 2.2–3.6 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and is packaged in 48-ball VFBGA (6 × 8 × 1.0 mm) with single chip enable and A19 at ball G2.
For engineers reviewing the CY7C1061GE30-10BV1XIT datasheet, CY7C1061GE30-10BV1XIT pinout, CY7C1061GE30-10BV1XIT application, or CY7C1061GE30-10BV1XIT equivalent, this device supports high-reliability embedded memory systems requiring ECC-enabled data integrity, low-power standby (20 mA typical), TTL-compatible I/O, and byte-selectable read/write operations via BHE/ BLE control.
Technical Context
The CY7C1061GE30-10BV1XIT implements a synchronous SRAM architecture with dedicated ECC logic that detects and corrects single-bit errors during read cycles, signaling correction events via the open-drain ERR output. Its dual-voltage support (2.2–3.6 V) enables compatibility with 3.3 V microcontroller buses and FPGA memory interfaces.
It features independent byte-enable control (BHE/BLE) for 8-bit sub-word accesses, TTL-compatible input thresholds, and automatic CE-driven power-down modes (ISB2 = 20 mA typical). The device uses standard address/data multiplexing with 20 address lines (A0–A19) and 16 bidirectional I/Os (I/O0–I/O15), supporting both single and dual CE configurations - this variant uses single CE and includes ERR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); supports full-word or byte-accessed storage without external logic. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V; enables direct interfacing with 100 MHz bus clocks in high-speed controllers. |
| ECC Function | Embedded single-bit error detection and correction per read cycle; ERR pin asserts high on correction event. |
| Supply Voltage Range | 2.2 V to 3.6 V; compatible with 3.3 V system rails and mixed-voltage board designs. |
| Standby Current (ISB2) | 20 mA typical at VCC = 3.0 V, TA = 25 °C; enables low-power retention in always-on subsystems. |
| Operating Current (ICC) | 90 mA typical at f = 100 MHz, VCC = 3.0 V; defines thermal budget for sustained burst transfers. |
| Data Retention Voltage | 1.0 V minimum; allows memory state hold during brown-out or controlled power-down sequences. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, Pb-free. Ball pitch: 0.5 mm. Mounting requires reflow profile compliant with J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus; A19 located at ball G2 per BV1XI configuration - enables full 1M-word addressing. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; supports simultaneous full-word or byte-aligned reads/writes via BHE/BLE. |
| CE | Chip Enable (Active Low) | Single CE input; device enters high-impedance state when HIGH, reducing system-level leakage. |
| WE | Write Enable (Active Low) | Controls write latching timing; sampled on rising edge of clock-equivalent bus cycle. |
| OE | Output Enable (Active Low) | Gates output drivers; allows shared bus operation with other peripherals without contention. |
| BHE / BLE | Byte High/Low Enable | Selects upper (I/O8–I/O15) or lower (I/O0–I/O7) byte during write/read - eliminates need for external byte mux. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit ECC correction; requires external pull-up for logic-level compatibility. |
| VCC / VSS | Power / Ground | Dual VCC balls (balls E1, F1) and multiple VSS balls (A1, D1, H1, etc.) ensure low-impedance supply routing and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Real-time single-bit error detection and correction per read access - no software overhead or external circuitry required. |
| Multi-voltage operation | Supports 2.2–3.6 V supply range with guaranteed 10 ns tAA, enabling drop-in replacement in legacy 3.3 V systems. |
| Low-power standby mode | ISB2 = 20 mA typical ensures minimal current draw during idle periods while retaining full memory content. |
| TTL-compatible I/O | Input thresholds and output drive strength match standard 3.3 V TTL levels - eliminates level-shifter requirements. |
| Byte-selectable access | BHE/BLE pins allow independent 8-bit writes/reads without masking logic or additional control signals. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan cycles and watchdog supervision. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory holding process variables, register states, and firmware stack frames. Use Value: Single-bit ECC prevents silent data corruption in long-duration control loops; 10 ns access ensures sub-microsecond response to interrupt-driven I/O updates. |
Use Scenario: Temporary frame storage in portable ultrasound or digital X-ray units where radiation-induced soft errors pose reliability risk. IC Role / Device Role / Timing Role: Offload buffer between image sensor interface and compression engine, operating under battery-constrained power budgets. Use Value: 1.0 V data retention allows safe suspend-to-RAM during brief power interruptions; 20 mA ISB2 extends operational runtime between charges. |
| Avionics Data Logger | Network Switch Packet Buffer |
Use Scenario: Non-volatile flight parameter logging in certified airborne equipment requiring DO-254 compliance and FIT < 0.1/Mb. IC Role / Device Role / Timing Role: Primary volatile memory staging raw sensor telemetry before CRC-verified flash write, with error audit trail via ERR pin. Use Value: ERR output provides hardware-observable fault signal for health monitoring subsystems - satisfies traceability requirements in safety-critical logs. |
Use Scenario: Layer-2 packet buffering in managed Ethernet switches handling multicast traffic bursts and QoS prioritization. IC Role / Device Role / Timing Role: Shared memory resource for ingress/egress queues, accessed concurrently by MAC and switch fabric controllers. Use Value: Byte-enable (BHE/BLE) support enables efficient partial-packet writes without full-word overwrites - reduces bus arbitration latency and memory bandwidth pressure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | No integrated ECC; requires external error-handling logic or software correction. | Suitable only where system-level ECC is already implemented or soft-error rate is non-critical. | Select when cost sensitivity outweighs reliability requirements and board space permits external ECC support. |
| Renesas R1EX24160AS0C0I#U0 | 16-Mbit PSRAM (pseudo-static) with internal refresh; no ECC; 70 ns access time. | Targeted at cost-sensitive consumer devices; lacks deterministic timing and ECC assurance. | Choose only for non-safety applications with relaxed timing and error tolerance - not a functional substitute. |
Compared with IS61WV102416BLL-10MLI and R1EX24160AS0C0I#U0, the CY7C1061GE30-10BV1XIT uniquely delivers hardware-accelerated ECC correction, 10 ns deterministic access, and industrial-grade voltage/temperature support - making it irreplaceable in systems where data integrity is enforced at the silicon level.
Availability
CY7C1061GE30-10BV1XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics data loggers, and network switch packet buffers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY7C1061GE30-10BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, security solutions, and memory products formerly developed by Cypress Semiconductor.
This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding ECC protection, multi-voltage flexibility, and industrial temperature resilience - not general-purpose memory.
FAQ
Does CY7C1061GE30-10BV1XIT support automatic error correction without host intervention?
Yes - the device performs single-bit error detection and correction autonomously during every read cycle using on-die ECC logic. No CPU or external controller action is required; corrected data appears on I/O lines, and the ERR pin pulses high to signal the event. There is no write-back capability, so correction applies only to the read path.
What is the function of the ERR pin, and how should it be interfaced?
The ERR pin is an open-drain output that asserts HIGH during a single-bit ECC correction event. It must be externally pulled up to VCC (typically via 4.7 kΩ resistor) to generate a valid logic-high signal. This pin enables hardware-triggered diagnostics, error logging, or system-level fault escalation without polling or software overhead.
Can CY7C1061GE30-10BV1XIT operate at 1.8 V?
No - this specific variant (CY7C1061GE30-10BV1XIT) is rated for 2.2 V to 3.6 V operation only. While earlier CY7C1061G18 variants support 1.65–2.2 V, the "30" in the part number denotes the 2.2–3.6 V voltage grade. Operation below 2.2 V violates datasheet specifications and may result in timing violations or ECC failure.
Is the 48-ball VFBGA package (BV1XI) lead-free and RoHS-compliant?
Yes - the BV1XI suffix indicates a Pb-free, RoHS-compliant 48-ball VFBGA package with matte tin surface finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) and requires standard reflow profiles for lead-free assembly. Full compliance documentation is available through Infineon's product change notifications.
CY7C1061GE30-10BV1XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE30-10BV1XIT FAQ
1.How can I place an order for CY7C1061GE30-10BV1XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE30-10BV1XIT reliable?
The price and inventory of CY7C1061GE30-10BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10BV1XIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GE30-10BV1XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10BV1XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE30-10BV1XIT?
CY7C1061GE30-10BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE30-10BV1XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE30-10BV1XIT?
For technical support, including CY7C1061GE30-10BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10BV1XIT requirements.
6.How does Aetrix verify that CY7C1061GE30-10BV1XIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE30-10BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10BV1XIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GE30-10BV1XIT?
All CY7C1061GE30-10BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10BV1XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE30-10BV1XIT part is unused and in its original packaging.
Return procedure for CY7C1061GE30-10BV1XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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