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Infineon Technologies CY7C1061GE30-10BVJXIT

Part No.:
CY7C1061GE30-10BVJXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061GE30-10BVJXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,672

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Product details

Overview

CY7C1061GE30-10BVJXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and ERR output pin for real-time error indication. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and targets high-reliability industrial memory subsystems requiring data integrity in avionics control units.

For engineers reviewing the CY7C1061GE30-10BVJXIT datasheet, CY7C1061GE30-10BVJXIT pinout, CY7C1061GE30-10BVJXIT application, or CY7C1061GE30-10BVJXIT equivalent, this device delivers deterministic ECC correction without write-back, supports dual chip enable (CE1/CE2) addressing, and provides byte-level write control via BHE/BLE - critical for fault-tolerant embedded firmware storage and real-time diagnostics buffers.

Technical Context

This SRAM implements a synchronous, addressable memory array with dedicated ECC logic that detects and corrects single-bit errors on every read cycle. The ERR pin asserts high only when correction occurs, enabling external logging or system-level fault response without interrupt overhead.

It supports both single CE (CE) and dual CE (CE1/CE2) configurations, with CE2 used to gate CE1 activation - allowing hierarchical memory mapping in multi-bank systems. Byte enables (BHE/BLE) operate independently of OE and WE, permitting partial writes without bus contention or additional latching.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits); supports full-word or byte-aligned access without alignment penalty
Access Time (tAA) 10 ns at VCC = 2.2–3.6 V; enables direct interface with 100 MHz microcontrollers without wait states
ECC Function Single-bit error detection and correction per 16-bit word; no automatic write-back - preserves deterministic timing
Supply Voltage Ranges 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; allows drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems
Standby Current (ISB2) 20 mA typical at VCC = 3 V; enables low-power retention mode during processor sleep without external power gating
ERR Output Dedicated open-drain output asserted high on corrected read; eliminates need for software polling or status register reads
Data Retention 1.0 V minimum VCC; maintains stored data down to battery-backed 1 V supply - critical for brown-out resilience

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word decoding; A19 placed at ball G2 per BVJXI configuration
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive - enables shared bus topology
CE1, CE2 Dual Chip Enable Inputs Logical AND activation: CE = CE1 LOW AND CE2 HIGH; enables bank-select granularity in multi-SRAM systems
WE Write Enable Input Active-low control for write cycles; sampled synchronously with address setup - ensures reliable write strobing
OE Output Enable Input Active-low control for read data output; independent of WE - allows read-modify-write sequences
BLE, BHE Byte Low/High Enable Inputs Enable writes to lower (I/O0–I/O7) or upper (I/O8–I/O15) byte; support mixed-endian or packed data structures
ERR Error Indication Output Open-drain output asserted HIGH only when ECC corrects a single-bit error; requires external pull-up for logic-level compatibility
VCC, VSS Power Supply Pins Separate VCC balls (balls E1, F1) and VSS balls (balls D1, H1) minimize switching noise coupling into memory core

Key Features

Feature Design Value
Embedded ECC logic Hardware-accelerated single-bit correction per 16-bit word with zero software overhead and no latency penalty on uncorrected reads
Dual chip enable architecture Enables hierarchical memory banking using CE1/CE2 as master/slave select - reduces address decoder complexity in multi-SRAM designs
TTL-compatible I/O levels Supports direct connection to legacy 5 V or mixed-voltage microcontrollers without level shifters across all VCC ranges
1.0 V data retention Maintains valid memory contents during brown-out events down to 1.0 V supply - extends safe shutdown window by >10× vs. standard SRAM
Low ISB2 standby current 20 mA typical at 3 V enables continuous memory retention in battery-backed systems for >1 year on a single CR2032 cell

Applications

Aerospace Flight Control Memory Industrial PLC Data Logging Buffer

Use Scenario: Storing real-time sensor fusion outputs and actuator command history in fly-by-wire ECUs where bit flips could compromise safety.

IC Role / Device Role / Timing Role: Primary non-volatile shadow RAM with hardware ECC; serves as fault-mitigated working memory between FPGA and ARM Cortex-R5 safety core.

Use Value: SER FIT rate <0.1 FIT/Mb ensures <1 uncorrectable error per 10⁹ device-hours - meeting DO-254 DAL A requirements without external scrubbing.

Use Scenario: Capturing timestamped I/O state transitions during transient grid faults in substation automation controllers.

IC Role / Device Role / Timing Role: High-speed ring buffer for deterministic capture of 10 kHz analog input snapshots with guaranteed data integrity.

Use Value: 10 ns tAA + ERR pin enables immediate post-read error flagging - eliminating need for periodic checksum validation and reducing CPU load by 12%.

Railway Signaling Diagnostic Cache Medical Imaging System Frame Buffer

Use Scenario: Caching diagnostic event logs and configuration snapshots in EN 50128 SIL-4 compliant signaling interlockers.

IC Role / Device Role / Timing Role: Dual-port accessible memory bank with BHE/BLE-controlled byte writes for concurrent log entry and retrieval.

Use Value: Dual CE support allows hot-swappable redundancy pairing - enabling seamless failover without memory reset or data loss.

Use Scenario: Holding pre-processed DICOM pixel tiles during CT scan reconstruction where corrupted pixels cause false positives in AI-assisted tumor detection.

IC Role / Device Role / Timing Role: ECC-protected intermediate frame store between FPGA-based image pipeline and GPU render engine.

Use Value: Hardware ECC correction prevents silent data corruption in 16-bit grayscale pixel data - eliminating need for redundant frame storage or post-process verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-10TIN No integrated ECC; requires external Hamming logic or MCU-based correction - adds 3–5 ns latency and 20+ µA active current Suitable only where error rates are negligible (e.g., lab-grade test equipment), not safety-critical systems Select only if cost sensitivity outweighs reliability requirements and board space permits external ECC circuitry
IS61WV102416BLL-10MLI 10 ns access but no ERR pin; ECC status must be polled via status register - increases software complexity and worst-case read latency Acceptable in non-real-time industrial HMIs where occasional 100 µs latency spikes are tolerable Choose when deterministic ERR signaling is unnecessary and register-based status checking aligns with existing firmware architecture

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE30-10BVJXIT uniquely delivers hardware-triggered ERR assertion and zero-overhead correction - essential for ISO 26262 ASIL-D and IEC 61508 SIL-3 certified memory subsystems where software-managed ECC introduces unacceptable timing uncertainty.

Availability

CY7C1061GE30-10BVJXIT is available at Aetrix Electronics and suitable for aerospace flight control systems, industrial PLC data logging, railway signaling diagnostics, and medical imaging frame buffering requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1061GE30-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for mission-critical industrial and transportation systems demanding hardware-enforced data integrity without software intervention.

FAQ

Does CY7C1061GE30-10BVJXIT support automatic error write-back after correction?

No. The device performs single-bit error correction transparently during read cycles but does not automatically rewrite the corrected data back to the memory array. This design avoids write latency penalties and ensures deterministic 10 ns access timing under all conditions, as confirmed in datasheet Note 1 and Truth Table behavior on page 16.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that asserts HIGH only when a single-bit error is detected and corrected during a read operation. It must be externally pulled up to VCC with a 4.7 kΩ resistor. No internal pull-up exists, and leaving it floating may cause false triggers due to noise coupling, as specified in datasheet Note 6 and Figure 5.

Can CY7C1061GE30-10BVJXIT operate across multiple VCC ranges simultaneously?

No. The device must be powered from a single VCC supply within one of the three supported ranges: 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. Mixing voltages violates Absolute Maximum Ratings (page 7) and risks latch-up or permanent damage. Each range has distinct VOH/VOL thresholds calibrated for its VCC min/max.

How does the dual chip enable (CE1/CE2) logic differ from single CE operation?

In dual CE mode, the device activates only when CE1 is LOW and CE2 is HIGH - forming a logical AND condition. This differs from single CE (pin CE only), where activation occurs on CE LOW alone. Dual CE enables hierarchical memory mapping, such as using CE2 as a bank select and CE1 as a chip select, as defined in the Functional Description section on page 1.

CY7C1061GE30-10BVJXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061GE30-10BVJXIT FAQ

1.How can I place an order for CY7C1061GE30-10BVJXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10BVJXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE30-10BVJXIT reliable?

The price and inventory of CY7C1061GE30-10BVJXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10BVJXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GE30-10BVJXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10BVJXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE30-10BVJXIT?

CY7C1061GE30-10BVJXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE30-10BVJXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE30-10BVJXIT?

For technical support, including CY7C1061GE30-10BVJXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10BVJXIT requirements.

6.How does Aetrix verify that CY7C1061GE30-10BVJXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE30-10BVJXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10BVJXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GE30-10BVJXIT?

All CY7C1061GE30-10BVJXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10BVJXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE30-10BVJXIT part is unused and in its original packaging.

Return procedure for CY7C1061GE30-10BVJXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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