My Inquiry
My Account
Infineon Technologies CY7C1061GE30-10BVXI
- Part No.:
- CY7C1061GE30-10BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GE30-10BVXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,678
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1061GE30-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for real-time error indication, and low standby current (20 mA typical). It serves as fault-tolerant memory in industrial control modules requiring data integrity under EMI-prone conditions.
For engineers reviewing the CY7C1061GE30-10BVXI datasheet, CY7C1061GE30-10BVXI pinout, CY7C1061GE30-10BVXI application, or CY7C1061GE30-10BVXI equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC behavior timing, byte-enable write control logic, and validated alternatives for SRAM replacement in safety-critical embedded systems.
Technical Context
This device implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles, asserting the ERR pin high upon correction-no automatic write-back is performed. The memory array is organized as 1,048,576 words × 16 bits, with address lines A0–A19 supporting full 20-bit addressing.
It supports dual chip enable (CE1/CE2) and single CE configurations, with BHE/ BLE enabling independent upper/lower byte writes to I/O8–I/O15 and I/O0–I/O7 respectively. All I/Os enter high-impedance state when deselected or during inactive control phases (OE, WE, BHE, BLE deasserted).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words): enables full 16-bit data bus interfacing without external multiplexing. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V: supports 100 MHz system clock synchronization with minimal wait states. |
| ECC Function | Single-bit error detection and correction per read cycle, signaled via dedicated ERR output pin-no software intervention required. |
| Supply Voltage Range | 2.2 V to 3.6 V: compatible with 3.3 V industrial logic families while allowing margin for voltage droop. |
| Standby Current (ISB2) | 20 mA typical: reduces power in sleep modes for battery-backed or energy-constrained control units. |
| Data Retention | 1.0 V minimum: maintains stored data during brown-out events down to 1 V supply. |
| I/O Interface | TTL-compatible inputs/outputs: ensures direct interoperability with legacy 3.3 V microcontrollers and FPGAs without level-shifting. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, industrial temperature grade (–40 °C to +85 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 placement varies by variant (Ball G2 or H6). |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive-enables bus sharing. |
| CE / CE1 & CE2 | Chip Enable Control | Single CE (active-low) or dual CE (CE1=LOW & CE2=HIGH) selection-supports flexible memory mapping in multi-chip systems. |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on rising edge of WE when CE and OE are asserted. |
| OE | Output Enable | Active-low control for read data output; disables I/O drivers when deasserted to prevent bus contention. |
| BLE / BHE | Byte Enable Inputs | BLE controls I/O0–I/O7; BHE controls I/O8–I/O15-enables 8-bit sub-word writes without disturbing adjacent bytes. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit ECC correction-used for logging or fault-triggered diagnostics. |
| VCC / VSS | Power & Ground | Dual VCC balls (Balls C1, D1) and multiple VSS balls (A2, E1, H1, etc.) ensure low-impedance supply routing and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Hardware-accelerated Hamming-code correction eliminates need for external error-handling firmware or redundant memory controllers. |
| Multi-voltage operation | Supports 2.2–3.6 V range-matches modern 3.3 V industrial MCU I/O rails while tolerating ±10% supply variation. |
| Low-power standby mode | 20 mA ISB2 enables extended retention in power-gated subsystems without volatile data loss. |
| Byte-selectable write architecture | BLE/BHE pins allow precise 8-bit updates-critical for register-mapped peripherals and configuration storage. |
| TTL-compatible signaling | Eliminates level translators in mixed-voltage designs using legacy 3.3 V controllers or CPLDs. |
Applications
| Industrial PLC Memory Buffer | Railway Signaling Data Log |
|---|---|
|
Use Scenario: Storing real-time sensor inputs and control state in programmable logic controllers deployed in factory automation environments with electrical noise. IC Role / Device Role / Timing Role: Primary working memory with ECC-protected read/write cycles synchronized to 100 MHz backplane clock. Use Value: Prevents undetected bit flips in critical control registers-ensuring deterministic response to emergency stop signals. |
Use Scenario: Capturing event timestamps and fault codes in train-borne signaling units operating across wide temperature ranges and vibration profiles. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding last-known-safe state during power interruption, retained at 1.0 V. Use Value: Enables safe restart after brown-out by preserving integrity of safety-critical log entries without checksum overhead. |
| Medical Imaging Frame Buffer | Avionics Display Cache |
|
Use Scenario: Temporary storage of DICOM image tiles during real-time rendering in portable ultrasound devices. IC Role / Device Role / Timing Role: High-speed 16-bit data path buffer interfaced directly to FPGA pixel engine with 10 ns tAA latency. Use Value: Guarantees pixel data fidelity across repeated read-modify-write operations-preventing artifact generation due to memory corruption. |
Use Scenario: Caching navigation map tiles and flight parameter overlays in certified cockpit display units subject to DO-254 requirements. IC Role / Device Role / Timing Role: Fault-tolerant SRAM providing ECC-verified display data to graphics controller during EMI transients. Use Value: Meets DAL-B integrity requirements by eliminating uncorrectable memory errors that could cause misleading symbology. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-10TIN | No integrated ECC; requires external error-checking logic or software parity handling. | Suitable only where system-level ECC is already implemented in controller firmware or ASIC. | Select only if board space allows additional logic and design schedule permits ECC algorithm integration. |
| IS61WV102416BLL-10MLI | 10 ns access but no ERR pin or hardware ECC-relies on external syndrome decoding. | Limited to non-safety-critical applications where occasional uncorrected errors are acceptable. | Prefer for cost-sensitive consumer-grade displays where ECC is not mandated by certification standards. |
Compared with CY7C1061GE30-10BVXI, AS7C31026B-10TIN lacks on-die ECC and ERR signaling, increasing firmware complexity, while IS61WV102416BLL-10MLI omits both ECC logic and error flagging-making them unsuitable for functional safety targets requiring hardware-level error visibility.
Availability
CY7C1061GE30-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling loggers, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1061GE30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full CY7C1061G/GE product line as part of its industrial memory portfolio.
This device belongs to Infineon's high-reliability SRAM family designed specifically for mission-critical embedded systems where data integrity, low power, and long-term supply stability are mandatory.
FAQ
Does CY7C1061GE30-10BVXI perform automatic write-back after ECC correction?
No. The device detects and corrects single-bit errors during read cycles and asserts the ERR pin, but it does not automatically rewrite the corrected data back to the memory cell. System firmware must initiate a separate write cycle if persistent correction is required.
What is the function of the ERR pin, and how should it be used in system design?
The ERR pin is an open-drain output that goes HIGH during a read cycle when a single-bit error is detected and corrected. It should be pulled up externally and monitored by the host processor or FPGA to trigger diagnostic logging or alert generation-no internal pull-up is provided.
Can CY7C1061GE30-10BVXI operate reliably at 2.2 V supply?
Yes. The "30" in the part number denotes the 2.2–3.6 V operating range, and the datasheet specifies guaranteed 10 ns access time and 20 mA ISB2 at VCC = 2.2 V minimum, making it fully compliant for 2.5 V nominal rail designs with tolerance margins.
Is the 48-ball VFBGA package (BVXI) lead-free and RoHS-compliant?
Yes. The BVXI suffix indicates a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified for industrial temperature operation (–40 °C to +85 °C) and reflow-compatible per J-STD-020.
CY7C1061GE30-10BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE30-10BVXI FAQ
1.How can I place an order for CY7C1061GE30-10BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE30-10BVXI reliable?
The price and inventory of CY7C1061GE30-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10BVXI is usually 5 days.
3.What payment methods are accepted for CY7C1061GE30-10BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE30-10BVXI?
CY7C1061GE30-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE30-10BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE30-10BVXI?
For technical support, including CY7C1061GE30-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10BVXI requirements.
6.How does Aetrix verify that CY7C1061GE30-10BVXI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE30-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10BVXI meets industry standards.
7.What is the process for return or replacement of CY7C1061GE30-10BVXI?
All CY7C1061GE30-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE30-10BVXI part is unused and in its original packaging.
Return procedure for CY7C1061GE30-10BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1061GE30-10BVXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
