Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1061GE30-10BVXIT

Part No.:
CY7C1061GE30-10BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061GE30-10BVXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,268

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1061GE30-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 2.2–3.6 V operation, and ERR output pin for real-time error indication. It supports byte-wide writes via BHE/ BLE and operates in industrial temperature range (–40 °C to +85 °C), deployed in mission-critical memory buffers for telecom baseband processors.

For engineers reviewing the CY7C1061GE30-10BVXIT datasheet, CY7C1061GE30-10BVXIT pinout, CY7C1061GE30-10BVXIT application, or CY7C1061GE30-10BVXIT equivalent, key selection factors include ECC-enabled data integrity, dual-chip-enable control logic, TSOP I / VFBGA package compatibility, and 20 mA ISB2 standby current at 3 V.

Technical Context

This SRAM implements full-cycle ECC on every read access: syndrome generation, single-bit correction, and ERR pin assertion-all within the 10 ns tAA timing window. The device uses TTL-compatible I/Os and supports both single-CE (CE) and dual-CE (CE1/CE2) addressing modes, with CE1 LOW + CE2 HIGH enabling memory access.

Byte write control is implemented via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, allowing partial-word updates without read-modify-write cycles. Data retention is guaranteed at 1.0 V, and the ERR output remains high for one clock cycle after error detection-no automatic write-back is performed.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits); supports full parallel word access without interleaving.
Access Time (tAA) 10 ns at 2.2–3.6 V; enables direct interface with 100 MHz bus controllers without wait states.
ECC Function On-the-fly single-bit error correction with ERR pin assertion; no software intervention required.
Supply Voltage Range 2.2 V to 3.6 V; compatible with 3.3 V system rails and mixed-voltage FPGA/ASIC interfaces.
Standby Current (ISB2) 20 mA typical at 3 V and TA = 25 °C; enables low-power hold mode during processor sleep cycles.
Operating Temperature –40 °C to +85 °C industrial grade; validated for continuous operation in base station and industrial control enclosures.
Data Retention Voltage 1.0 V minimum; allows battery-backed retention during main power loss without external supervisor IC.

Pinout & Package

The CY7C1061GE30-10BVXIT is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, with 0.5 mm ball pitch. Pinout conforms to dual-chip-enable configuration with ERR output and A19 at ball G2 (Package ID: BVXIT).

Pin/Terminal Circuit Role Design Meaning
CE1, CE2 Dual chip enable inputs Active-LOW CE1 + active-HIGH CE2 required for access; enables hierarchical memory decoding in multi-bank systems.
WE Write enable input LOW initiates write cycle; synchronized with address and data setup/hold timing for reliable latch-in.
OE Output enable input Controls tri-state of I/O0–I/O15; allows shared bus arbitration without external transceivers.
BHE, BLE Byte high/low enable inputs Select upper (I/O8–I/O15) or lower (I/O0–I/O7) byte for partial writes; eliminates need for external byte masking logic.
ERR Error indication output Open-drain HIGH pulse signals single-bit correction event; used for diagnostic logging or fault-triggered system reset.
I/O0–I/O15 Bi-directional data bus 16-bit parallel interface with TTL-compatible thresholds; supports direct connection to 3.3 V microcontrollers and FPGAs.
A0–A19 Address inputs 20-bit address space (1M words); A19 placed at ball G2 per BVXIT pin map for PCB layout consistency.

Key Features

Feature Design Value
Embedded ECC engine Hardware-accelerated single-bit correction per read cycle-no CPU overhead or firmware dependency.
Multi-voltage support Single device supports 2.2–3.6 V operation, eliminating need for level shifters in mixed-supply systems.
Low ISB2 standby current 20 mA typical at 3 V enables >10× power reduction vs. non-ECC SRAMs during idle periods.
TTL-compatible I/O Direct interface with legacy 3.3 V ASICs and microcontrollers-no external voltage translation required.
VFBGA and TSOP I packaging 48-ball VFBGA (BVXIT) offers 40% smaller footprint than 48-pin TSOP I-critical for space-constrained 5G radio modules.

Applications

Telecom Baseband Processing Industrial PLC Data Buffers

Use Scenario: Real-time packet buffering in LTE/5G remote radio units where bit flips from radiation or EMI must be corrected before forwarding.

IC Role / Device Role / Timing Role: High-speed, ECC-protected working memory interfacing directly with FPGA-based MAC layers at 100 MHz.

Use Value: Eliminates uncorrectable memory errors that would otherwise trigger packet retransmission or link layer resets.

Use Scenario: Storing sensor calibration tables and motion-control trajectory data in programmable logic controllers operating in electrically noisy factory environments.

IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM holding critical runtime parameters during AC power interruption.

Use Value: 1.0 V data retention ensures parameter integrity across brownouts without backup capacitor oversizing.

Medical Imaging Subsystems Avionics Display Memory

Use Scenario: Frame buffer storage in portable ultrasound machines where cosmic ray-induced soft errors could corrupt image reconstruction pipelines.

IC Role / Device Role / Timing Role: Dual-port-accessible SRAM supporting simultaneous DMA reads (for display) and CPU writes (for new scan lines).

Use Value: ERR pin enables deterministic error logging for FDA-mandated failure reporting without interrupt latency penalties.

Use Scenario: HUD (Head-Up Display) graphics memory in commercial aircraft, requiring DO-254 compliance and immunity to single-event upsets.

IC Role / Device Role / Timing Role: Safety-critical display buffer with ECC validation prior to pixel rendering pipeline ingestion.

Use Value: SER FIT rate <0.1 FIT/Mb meets avionics reliability targets for Class E hardware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-10TIN No integrated ECC; requires external Hamming logic or controller-side correction. Suitable only where host processor handles ECC or error tolerance is higher. Select when cost sensitivity outweighs reliability requirements and board space permits external logic.
IS61WV102416BLL-10MLI 10 ns access but no ERR pin; ECC status not externally observable. Lacks real-time error notification-diagnostic visibility limited to software polling. Choose when system-level error logging is handled by firmware and pin count is constrained.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE30-10BVXIT uniquely delivers hardware ECC with visible ERR signaling-enabling deterministic fault response in safety- or uptime-critical systems without software overhead.

Availability

CY7C1061GE30-10BVXIT is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, medical imaging, and avionics applications requiring stable component supply, long-term lifecycle assurance, and ECC-enabled memory integrity.

Supply support for CY7C1061GE30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY7C1061GE30-10BVXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered for applications demanding deterministic ECC correction, industrial temperature resilience, and seamless integration into FPGA- and ASIC-based memory subsystems.

FAQ

Does CY7C1061GE30-10BVXIT support automatic error write-back after correction?

No. The device performs on-the-fly single-bit correction during read cycles and asserts the ERR pin, but it does not automatically rewrite the corrected data back to the memory array. System firmware or external logic must initiate a write cycle if persistent correction is required.

What is the function of the ERR pin during normal (error-free) operation?

During error-free reads, the ERR pin remains in a high-impedance (Hi-Z) state. It only drives HIGH for one clock cycle upon detection and correction of a single-bit error-no pull-up or pull-down resistor is required unless system-level monitoring demands a defined default state.

Can CY7C1061GE30-10BVXIT operate with 1.8 V supply?

No. This variant (suffix "30") is specified for 2.2–3.6 V operation only. For 1.65–2.2 V operation, the CY7C1061G18 family (e.g., CY7C1061G18-15BVXI) must be used-voltage ranges are not interchangeable due to internal regulator and timing path design differences.

Is the 48-ball VFBGA (BVXIT) pinout compatible with standard 48-pin TSOP I footprints?

No. The BVXIT package is a 6 mm × 8 mm VFBGA with 0.5 mm ball pitch and bottom-side terminations, while TSOP I uses 48 gull-wing leads on 0.5 mm pitch with side-mounted leads. PCB layout, thermal relief, and reflow profiles are incompatible-mechanical adaptation requires redesign.

CY7C1061GE30-10BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061GE30-10BVXIT FAQ

1.How can I place an order for CY7C1061GE30-10BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE30-10BVXIT reliable?

The price and inventory of CY7C1061GE30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10BVXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GE30-10BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE30-10BVXIT?

CY7C1061GE30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE30-10BVXIT?

For technical support, including CY7C1061GE30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10BVXIT requirements.

6.How does Aetrix verify that CY7C1061GE30-10BVXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10BVXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GE30-10BVXIT?

All CY7C1061GE30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE30-10BVXIT part is unused and in its original packaging.

Return procedure for CY7C1061GE30-10BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1061GE30-10BVXIT Tags

  • CY7C1061GE30-10BVXIT
  • CY7C1061GE30-10BVXIT PDF
  • CY7C1061GE30-10BVXIT Datasheet
  • CY7C1061GE30-10BVXIT Specifications
  • CY7C1061GE30-10BVXIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1061GE30-10BVXIT
  • Buy CY7C1061GE30-10BVXIT
  • CY7C1061GE30-10BVXIT Price
  • CY7C1061GE30-10BVXIT Distributor
  • CY7C1061GE30-10BVXIT Supplier
  • CY7C1061GE30-10BVXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER