Infineon Technologies CY7C1061GE30-10ZSXI

Overview

CY7C1061GE30-10ZSXI from Infineon (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 2.2–3.6 V operation, and dual chip enable (CE1/CE2) in 54-pin TSOP II package. It delivers ECC-enabled data integrity for mission-critical memory buffers in industrial controllers and telecom line cards.

For engineers reviewing the CY7C1061GE30-10ZSXI datasheet, CY7C1061GE30-10ZSXI pinout, CY7C1061GE30-10ZSXI application, or CY7C1061GE30-10ZSXI equivalent, this device supports high-speed byte-wide reads/writes with ERR output signaling, TTL-compatible I/Os, and low 20 mA standby current - critical for deterministic real-time systems requiring fault-resilient SRAM.

Technical Context

This SRAM implements full on-die ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when correction occurs, enabling system-level error logging without interrupt overhead.

It supports dual chip enable architecture (CE1/CE2) for hierarchical memory mapping and byte-select writes via BHE/ BLE control of I/O8–I/O15 and I/O0–I/O7 respectively. Address range spans A0–A19 (1 M words), with A19 placed at pin 31 in ZSXI package per Figure 10.

Key Specifications

Pinout & Package

54-pin TSOP II package (ZSXI suffix), 22.4 mm × 11.84 mm × 1.0 mm body, lead pitch 0.8 mm, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE30-10ZSXI uniquely integrates both correction logic and dedicated ERR signaling - reducing BOM count, eliminating timing uncertainty in error handling, and simplifying functional safety qualification.

Availability

CY7C1061GE30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card data caches, and medical imaging frame stores requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GE30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio for industrial, automotive, and aerospace applications.

CY7C1061GE30-10ZSXI belongs to the Cypress SRAM family designed specifically for fault-tolerant embedded systems requiring hardware ECC, deterministic timing, and extended temperature operation.

FAQ

Does CY7C1061GE30-10ZSXI support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction entirely in hardware during each read cycle. No firmware or external logic is required - corrected data appears on I/O lines, and the ERR pin pulses high to indicate correction occurred. This occurs transparently with no impact on access timing or bus arbitration.

What is the function of the dual CE inputs (CE1 and CE2) on this SRAM?

CE1 and CE2 implement a logical chip enable: CE is active only when CE1 is LOW and CE2 is HIGH. This enables hierarchical memory decoding - for example, using CE2 as a bank select and CE1 as a page select - allowing up to four independent 16-Mbit banks in a single address space without external glue logic.

Can the ERR pin be left unconnected if error reporting is not needed?

Yes. The ERR pin is an open-drain output and may be left floating if unused. However, if connected, it requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a valid logic HIGH when an error is corrected. Leaving it unconnected disables error visibility but does not affect memory functionality.

How does the 1.0 V data retention capability benefit system design?

The device retains valid data down to 1.0 V VCC, enabling graceful degradation during brown-out conditions. This allows systems to maintain memory state through brief power interruptions or controlled low-power modes - critical for industrial controllers that must preserve process state during mains dips or backup battery transitions.