Infineon Technologies CY7C1061GE30-10ZSXIT

Overview

CY7C1061GE30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for real-time error indication, and low 20 mA typical standby current (ISB2). It serves as a high-reliability memory buffer in industrial control modules requiring data integrity under extended temperature operation.

For engineers reviewing the CY7C1061GE30-10ZSXIT datasheet, CY7C1061GE30-10ZSXIT pinout, CY7C1061GE30-10ZSXIT application, or CY7C1061GE30-10ZSXIT equivalent, this device delivers deterministic ECC correction without write-back, supports byte-level writes via BHE/ BLE, maintains 1.0 V data retention, and is validated for use in dual-chip-enable configurations with CE1/CE2 logic.

Technical Context

The CY7C1061GE30-10ZSXIT implements a synchronous SRAM architecture with dedicated ECC logic that detects and corrects single-bit errors during read cycles, signaled by the open-drain ERR output. Its address space spans A0–A19 (20-bit), supporting 1M-word addressing with 16-bit parallel I/O (I/O0–I/O15).

It operates across three voltage ranges-1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V-with this variant specifically rated for 2.2–3.6 V and 10 ns tAA. Control logic includes independent byte enables (BHE/BLE), chip enable (CE1/CE2), write enable (WE), and output enable (OE), enabling flexible memory mapping and partial-word access.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, lead-free (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE30-10ZSXIT uniquely integrates both correction logic and a dedicated ERR output, enabling zero-software-overhead fault reporting and simplifying compliance with IEC 61508/DO-254 functional safety architectures.

Availability

CY7C1061GE30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics health monitors requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7C1061GE30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, engineered for mission-critical industrial and transportation systems demanding deterministic ECC correction, wide-temperature operation, and robust data retention under voltage stress.

FAQ

Does CY7C1061GE30-10ZSXIT support automatic error write-back after correction?

No. The device performs single-bit error detection and correction during read cycles but does not automatically write the corrected data back to memory. The corrected value appears only on the I/O bus; any persistent update requires external logic or host processor intervention. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin, and how should it be terminated if unused?

The ERR pin is an open-drain output that asserts HIGH during successful single-bit error correction. If unused, it must be left floating - no pull-up or pull-down resistor is required or recommended. Connecting it to VCC or GND may cause contention or unintended assertion, as stated in Note 6 of the datasheet.

Can CY7C1061GE30-10ZSXIT operate across multiple VCC ranges, and which one applies to this part number?

Yes, the CY7C1061GE family supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V ranges. The "30" in CY7C1061GE30-10ZSXIT specifies the 2.2–3.6 V range, and the "10" denotes 10 ns access time. Operation outside this range violates electrical specifications and voids parametric guarantees.

How does the dual chip enable (CE1/CE2) logic differ from single CE operation?

CE1 and CE2 implement NAND logic: memory is selected only when CE1 = LOW and CE2 = HIGH. In contrast, single-CE variants use one input (CE) active LOW. Dual CE enables hierarchical decoding - e.g., using CE1 as bank select and CE2 as global enable - reducing external gate count in multi-SRAM designs.