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Infineon Technologies CY7C1061GE30-10ZXI

Part No.:
CY7C1061GE30-10ZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7C1061GE30-10ZXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:177

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Product details

Overview

CY7C1061GE30-10ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, TTL-compatible I/O, and ERR output pin for real-time error indication. It operates across 2.2 V–3.6 V supply, draws 90 mA typical active current at 100 MHz, and supports industrial temperature range (–40 °C to +85 °C). Used in mission-critical embedded controllers requiring data integrity assurance.

For engineers reviewing the CY7C1061GE30-10ZXI datasheet, CY7C1061GE30-10ZXI pinout, CY7C1061GE30-10ZXI application, or CY7C1061GE30-10ZXI equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC functional behavior, byte-enable control logic, ERR signal timing, and validated alternatives for memory subsystem design.

Technical Context

This SRAM implements full on-die ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when a correctable error is found and corrected - no automatic write-back occurs, preserving deterministic timing.

It supports both single CE (CE pin only) and dual CE (CE1/CE2) configurations; the ZXI suffix confirms single CE with ERR pin in 48-pin TSOP I package. Byte enable (BHE/ BLE) enables independent upper/lower 8-bit writes, and all I/Os enter high-Z state when deselected or during standby.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits); provides 2 MB of word-accessible storage for firmware buffers or real-time data logging.
Access Time (tAA) 10 ns at 2.2–3.6 V; enables direct interface with 100 MHz microcontrollers without wait states.
ECC Function On-die single-bit error detection and correction per read cycle; ERR pin signals correction event - no software intervention required.
Supply Voltage Range 2.2 V to 3.6 V; compatible with 3.3 V system rails and mixed-voltage SoC interfaces.
Active Current (ICC) 90 mA typical at 100 MHz; enables power budgeting for high-throughput memory access in industrial controllers.
Standby Current (ISB2) 20 mA typical; supports low-power retention mode while maintaining full ECC readiness.
Data Retention 1.0 V minimum retention voltage; allows battery-backed operation during brown-out conditions.

Pinout & Package

Package: 48-pin TSOP I (12 mm × 18.4 mm × 1 mm), RoHS-compliant, industrial-grade (–40 °C to +85 °C).

Pin/Terminal Circuit Role Design Meaning
CE Chip Enable (active-low) Primary device selection signal; places I/Os in high-Z when deasserted, enabling multi-SRAM bus sharing.
WE Write Enable (active-low) Controls write latch timing; combined with address setup, defines write window for reliable data capture.
OE Output Enable (active-low) Enables output drivers only during read cycles; prevents bus contention when multiple devices share data lines.
BLE / BHE Byte Low/High Enable Independent 8-bit write control: BLE enables I/O0–I/O7, BHE enables I/O8–I/O15 - essential for partial-word updates.
ERR Error Indication Output Open-drain output asserted high during successful single-bit correction; requires external pull-up for logic-level compatibility.
I/O0–I/O15 Bi-directional Data Bus 16-bit parallel interface with TTL-compatible thresholds; supports legacy and modern 3.3 V controller I/O standards.
A0–A19 Address Inputs 20-bit address bus (A0–A19) selects one of 1M locations; A19 is MSB and mapped to pin 25 in ZXI package.

Key Features

Feature Design Value
Embedded ECC Logic Hardware-based single-bit error correction per read cycle eliminates need for external ECC controller or software overhead.
Multi-Voltage Support Single device supports 2.2–3.6 V operation - simplifies migration from 5 V to 3.3 V systems without redesigning memory interface.
ERR Pin Assertion Dedicated open-drain output signals correction events in real time, enabling system-level error logging or diagnostic flagging.
Byte-Enable Architecture Independent BLE/BHE control allows atomic 8-bit writes - critical for protocol stack buffers and register-mapped peripherals.
Industrial Temperature Range Rated –40 °C to +85 °C with guaranteed 10 ns tAA and ECC functionality - suitable for uncontrolled ambient environments.

Applications

Avionics Data Logging Railway Signaling Controller

Use Scenario: Real-time recording of flight parameter telemetry with checksum validation and long-term storage integrity.

IC Role / Device Role / Timing Role: Primary non-refreshing buffer storing sensor samples between DSP processing bursts; ECC ensures bit-flip immunity during extended airborne exposure.

Use Value: Eliminates need for periodic memory scrubbing or redundant storage layers - reduces BOM count and firmware complexity.

Use Scenario: Storing interlocking logic state tables and safety-critical command histories in ERTMS/ETCS Level 2 signaling units.

IC Role / Device Role / Timing Role: Deterministic-access SRAM holding fail-safe state machine variables; ERR pin feeds watchdog interrupt for immediate fault reporting.

Use Value: Meets SIL-3 requirements for data integrity without external ECC IC - lowers certification effort and board space.

Medical Imaging Buffer Industrial PLC I/O Mapping

Use Scenario: Temporary frame buffering in portable ultrasound devices where radiation-induced soft errors must be mitigated.

IC Role / Device Role / Timing Role: High-speed 16-bit data path between ADC pipeline and FPGA image processor; 10 ns access sustains pixel throughput >120 MSPS.

Use Value: On-die ECC replaces dual-module mirroring strategy - cuts PCB area by 35% and power draw by 22% versus redundant SRAM pair.

Use Scenario: Holding dynamic I/O configuration tables and real-time process variable snapshots in modular automation controllers.

IC Role / Device Role / Timing Role: Memory-mapped register bank accessed via ARM Cortex-M4 bus; byte enables support per-channel status update without full-word overwrite.

Use Value: Enables atomic 8-bit writes to individual I/O modules - prevents race conditions during hot-swap or firmware update operations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102416BLL-10MLI No integrated ECC; requires external logic or software for error handling. 10 ns access, same 1M×16 density, 2.2–3.6 V. Lacks hardware ERR signal; unsuitable for safety-critical systems requiring autonomous error reporting. Select when cost sensitivity outweighs ECC requirement and firmware can manage error detection.
Micron MT48LC16M16A2P-6A:G Synchronous SDRAM with optional ECC (via external logic), not asynchronous SRAM; 133 MHz clocked interface, higher latency. Requires clock domain management and refresh cycles; incompatible with legacy async bus designs. Choose only for new designs targeting higher bandwidth and willing to adopt SDRAM controller IP.

Compared with IS61WV102416BLL-10MLI and MT48LC16M16A2P-6A:G, CY7C1061GE30-10ZXI uniquely delivers deterministic 10 ns async access with autonomous on-die ECC and ERR signaling - critical for retrofitting ECC into existing microcontroller-based systems without architectural changes.

Availability

CY7C1061GE30-10ZXI is available at Aetrix Electronics and suitable for avionics data logging, railway signaling controllers, and medical imaging buffers requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality across industrial temperature ranges.

Supply support for CY7C1061GE30-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and safety-certified product lines.

CY7C1061GE30-10ZXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding error-resilient, pin-compatible memory upgrades without sacrificing speed or simplicity.

FAQ

Does CY7C1061GE30-10ZXI require external circuitry to implement ECC?

No. All ECC encoding, detection, and correction logic is fully integrated on-die. The device performs single-bit correction automatically during every read cycle. The ERR pin signals correction events, but no external components or firmware routines are needed for basic ECC operation.

Can the ERR pin be left unconnected if error reporting is not used?

Yes. The ERR pin is an open-drain output and may be left floating if unused. However, if system-level error logging is desired, it must be pulled up to VCC via a 4.7 kΩ resistor to generate a valid logic-high signal upon correction.

What is the maximum clock frequency supported for burst reads?

CY7C1061GE30-10ZXI is an asynchronous SRAM and does not use a clock. Its 10 ns access time supports sustained 100 MHz bus operation when interfaced with controllers having appropriate setup/hold timing margins - no internal clock limits apply.

Is the 1.0 V data retention specification guaranteed over temperature?

Yes. Data retention at 1.0 V is specified across the full industrial temperature range (–40 °C to +85 °C), verified per JEDEC JESD22-A117. This enables reliable battery-backed operation during extended power-loss events without refresh.

CY7C1061GE30-10ZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY7C1061GE30-10ZXI FAQ

1.How can I place an order for CY7C1061GE30-10ZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GE30-10ZXI reliable?

The price and inventory of CY7C1061GE30-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10ZXI is usually 5 days.

3.What payment methods are accepted for CY7C1061GE30-10ZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10ZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GE30-10ZXI?

CY7C1061GE30-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GE30-10ZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GE30-10ZXI?

For technical support, including CY7C1061GE30-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10ZXI requirements.

6.How does Aetrix verify that CY7C1061GE30-10ZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1061GE30-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10ZXI meets industry standards.

7.What is the process for return or replacement of CY7C1061GE30-10ZXI?

All CY7C1061GE30-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10ZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GE30-10ZXI part is unused and in its original packaging.

Return procedure for CY7C1061GE30-10ZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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