My Inquiry
My Account
Infineon Technologies CY7C1061GE30-10ZXIT
- Part No.:
- CY7C1061GE30-10ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7C1061GE30-10ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:2,701
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1061GE30-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, TTL-compatible I/O, and ERR output for real-time error indication. It operates across 2.2 V–3.6 V supply, draws 90 mA typical active current, and supports industrial temperature range (–40 °C to +85 °C). Used in mission-critical embedded controllers requiring data integrity assurance.
For engineers reviewing the CY7C1061GE30-10ZXIT datasheet, CY7C1061GE30-10ZXIT pinout, CY7C1061GE30-10ZXIT application, or CY7C1061GE30-10ZXIT equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC functional behavior, byte-enable control logic, ERR signal timing, and direct alternatives with documented voltage/speed/feature trade-offs.
Technical Context
This SRAM implements full-cycle ECC on every read operation: detection and correction of single-bit errors in accessed 16-bit words without CPU intervention, signaled via open-drain ERR output asserted high. The device uses dual-byte enable (BHE/BLE) for independent upper/lower byte writes and reads, with CE-controlled chip selection and OE-gated output drivers.
It supports three VCC ranges - 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - with speed grade "30" specifying 10 ns tAA at 2.2–3.6 V. Standby current ISB2 = 20 mA typical is achieved via automatic CE power-down mode when chip enable is deasserted under CMOS input conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words) - provides full 2 MB addressable data space with parallel bus interface. |
| Access Time (tAA) | 10 ns at VCC = 2.2–3.6 V - enables synchronous operation with 100 MHz system clocks in high-speed microcontroller buses. |
| ECC Function | Embedded single-bit error correction per 16-bit word - corrects bit flips in memory array without software overhead or write-back latency. |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with modern low-voltage FPGA I/O banks and ARM Cortex-A/R-based SoC memory controllers. |
| Active Current (ICC) | 90 mA typical at f = 100 MHz - defines thermal budget for dense PCB layouts in industrial compute modules. |
| Standby Current (ISB2) | 20 mA typical - ensures low-power retention during processor sleep modes while preserving ECC-enabled data integrity. |
| ERR Output | Open-drain active-high signal - asserts during read cycle if single-bit error detected/corrected; requires external pull-up for logic-level compatibility. |
Pinout & Package
Package: 48-pin Thin Small Outline Package Type I (TSOP I), 12 mm × 18.4 mm × 1.0 mm body, lead pitch 0.5 mm, RoHS-compliant Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 is MSB and determines top/bottom half of memory map. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel data path; high-impedance when CE/OE/BLE/BHE inactive - enables bus sharing in multi-device systems. |
| CE | Chip Enable | Active-low enable controlling device selection; when HIGH, all outputs enter high-Z state regardless of OE/WE status. |
| OE | Output Enable | Active-low control for data output drivers; allows read operations without toggling CE, enabling fast page-mode access. |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on I/O lines into addressed location when CE and OE are asserted appropriately. |
| BLE / BHE | Byte Low/High Enable | Independent controls for lower (I/O0–I/O7) and upper (I/O8–I/O15) byte writes - essential for mixed-endian or partial-word updates. |
| ERR | Error Indicator Output | Open-drain output asserted HIGH during read cycle upon single-bit error detection/correction; must be externally pulled up to VCC. |
| VCC, VSS | Power Supply Pins | Two VCC and two VSS pins distributed across package - reduce simultaneous switching noise and improve signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Hardware-accelerated single-bit error correction per 16-bit word with no CPU cycles or firmware overhead. |
| Multi-voltage support | Single device supports 2.2–3.6 V operation - eliminates need for level shifters when interfacing with mixed-voltage SoCs. |
| Byte-select write capability | BLE/BHE pins allow independent 8-bit writes - critical for efficient stack/heap management in real-time OS environments. |
| ERR output signaling | Dedicated open-drain ERR pin provides immediate hardware notification of corrected errors - enables logging or fail-safe response without polling. |
| Low standby power | 20 mA typical ISB2 enables extended battery-backed operation in industrial HMI and telemetry edge nodes. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and ladder logic variables in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Primary working memory buffer with ECC-protected read/write cycles synchronized to 10–50 µs scan intervals. Use Value: Prevents undetected memory corruption in safety-critical control loops - meets IEC 61508 SIL-2 requirements for data integrity. |
Use Scenario: Holds uncompressed grayscale frame buffers (e.g., 1024×1024×16-bit) during CT/MRI image acquisition and preprocessing. IC Role / Device Role / Timing Role: High-bandwidth parallel memory interface between FPGA pixel pipeline and DSP subsystem. Use Value: 10 ns tAA sustains >90 MB/s sustained throughput; ECC prevents silent image artifacts from cosmic-ray-induced bit flips. |
| Railway Signaling Controller | Avionics Data Recorder |
|
Use Scenario: Stores interlocking logic states and sensor fusion results in EN 50128-certified train control units operating in high-EMI environments. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding validated command history and fault logs with ECC-checked retrieval. Use Value: SER FIT rate <0.1 FIT/Mb ensures ≤1 uncorrectable error per 109 hours - satisfies CENELEC Class 4 reliability targets. |
Use Scenario: Captures flight parameter streams (ARINC 429, MIL-STD-1553) in black box recorders where data loss is unacceptable. IC Role / Device Role / Timing Role: Buffered write-through memory staging raw sensor data before compression and flash storage. Use Value: ERR output triggers immediate checksum revalidation upon error detection - guarantees forensic-grade data chain-of-custody. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No ERR pin; ECC status requires register read; 10 ns tAA at 3.3 V only; no 2.2–2.7 V support. | Lacks hardware interrupt for error events - requires polling or firmware polling loop integration. | Select when cost sensitivity outweighs need for real-time error notification and multi-voltage flexibility. |
| AS6C1008-10TIN | No embedded ECC; external ECC logic required; 10 ns tAA; 3.3 V only; higher ICC (120 mA typical). | Increases BOM count and PCB area; adds latency for software ECC calculation; fails to meet functional safety ASIL-B requirements. | Select only for legacy designs already using AS6C-series footprint and where ECC is implemented externally. |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C1061GE30-10ZXIT uniquely delivers integrated ERR signaling, 2.2–3.6 V operation, and zero-software ECC correction - making it optimal for safety-certified industrial and transportation systems requiring deterministic error handling.
Availability
CY7C1061GE30-10ZXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data recorders requiring stable component supply with long-term lifecycle assurance.
Supply support for CY7C1061GE30-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY7C1061GE30-10ZXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding hardware ECC, multi-voltage interoperability, and industrial temperature resilience.
FAQ
Does CY7C1061GE30-10ZXIT require external circuitry to implement ECC?
No. The device contains fully integrated ECC encoding/decoding logic that operates transparently during every read cycle. Single-bit errors are automatically detected and corrected in hardware without CPU involvement, register access, or external logic. The ERR pin signals correction events, but no external components are needed for ECC functionality.
What is the function of the ERR pin, and how should it be connected?
The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected. It must be externally pulled up to VCC (2.2–3.6 V) with a 4.7 kΩ resistor. In systems requiring fault logging, ERR can drive an interrupt input or status LED; if unused, it must be left floating per datasheet Note 8.
Can CY7C1061GE30-10ZXIT operate at 1.8 V?
No. This specific variant (suffix "30") is rated for 2.2 V–3.6 V operation only. While the broader CY7C1061G(E) family includes 1.65–2.2 V variants (e.g., CY7C1061G18), the "30" speed grade and ZXIT packaging are qualified exclusively for the 2.2–3.6 V range per datasheet Table 1 and DC Characteristics table.
How does byte enable (BLE/BHE) affect ECC operation?
BLE and BHE control which 8-bit portion of the 16-bit word is written, but ECC always operates on the full 16-bit word during read cycles. Writing only one byte leaves the other byte unchanged, and subsequent reads of the full word still trigger full-word ECC checking - ensuring integrity regardless of partial-write patterns.
CY7C1061GE30-10ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7C1061GE30-10ZXIT FAQ
1.How can I place an order for CY7C1061GE30-10ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE30-10ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE30-10ZXIT reliable?
The price and inventory of CY7C1061GE30-10ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE30-10ZXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GE30-10ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE30-10ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE30-10ZXIT?
CY7C1061GE30-10ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE30-10ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE30-10ZXIT?
For technical support, including CY7C1061GE30-10ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE30-10ZXIT requirements.
6.How does Aetrix verify that CY7C1061GE30-10ZXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE30-10ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE30-10ZXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GE30-10ZXIT?
All CY7C1061GE30-10ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE30-10ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE30-10ZXIT part is unused and in its original packaging.
Return procedure for CY7C1061GE30-10ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1061GE30-10ZXIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
