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Infineon Technologies CY7C1061GN18-15ZSXIT

Part No.:
CY7C1061GN18-15ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1061GN18-15ZSXIT.pdf
Description:
IC SRAM 16MBIT PAR 54TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,696

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Product details

Overview

CY7C1061GN18-15ZSXIT from Cypress Semiconductor is a 16-Mbit (1M × 16) asynchronous CMOS static RAM with dual chip enable (CE1/CE2), 15 ns access time, 2.2–3.6 V operating voltage, and 20 µA typical CMOS standby current (ISB2). It supports byte-wide write control via BHE/BLE and operates in industrial temperature range (–40 °C to +85 °C) for embedded memory buffering in FPGA co-processor systems.

For engineers reviewing the CY7C1061GN18-15ZSXIT datasheet, CY7C1061GN18-15ZSXIT pinout, CY7C1061GN18-15ZSXIT application, or CY7C1061GN18-15ZSXIT equivalent, key selection criteria include tAA = 15 ns timing at 3.3 V, dual CE architecture for hierarchical memory mapping, low-voltage data retention (1.0 V), TTL-compatible I/O levels, and VFBGA-48 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a fully decoded 1M-word × 16-bit array with independent byte write enables (BHE/BLE) enabling selective 8-bit writes without read-modify-write cycles. Its dual CE logic (CE1 LOW + CE2 HIGH = active) allows seamless integration into multi-chip memory banks with address decoding granularity.

It features automatic power-down when deselected, delivering ISB2 = 20 µA (typ) at VCC = 3.3 V, and supports 1.0 V data retention with tCDR = 0 ns - meaning retention mode engages immediately upon CE deassertion. All I/Os are TTL-compatible with VIH/VIL thresholds scaled across 2.2–3.6 V supply ranges.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1,048,576 words × 16 bits - provides 2 MB of fast, non-refreshing storage for real-time data buffering.
Access Time (tAA) 15 ns at VCC = 3.3 V - enables direct interfacing with 66 MHz microcontrollers without wait states.
Operating Voltage 2.2 V to 3.6 V - supports mixed-voltage system designs including 2.5 V and 3.3 V domains.
Standby Current (ISB2) 20 µA typical - reduces quiescent power in always-on edge sensor nodes and battery-backed modules.
Data Retention Voltage 1.0 V minimum - maintains stored contents during brown-out conditions or ultra-low-power sleep modes.
Input/Output Compatibility TTL-compatible - eliminates level-shifter requirements when interfacing with legacy 5 V logic families.
Package Type 48-ball VFBGA (6 × 8 × 1.0 mm, BVJXI grade) - enables compact, high-pin-count routing in space-constrained IoT gateways.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, solder mask defined pads, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word addressing; A16/A18/A19 are used for extended memory mapping.
I/O0–I/O7 Lower Byte Data I/O Bi-directional 8-bit data path enabled only when BLE = LOW; isolated during high-Z or write operations.
I/O8–I/O15 Upper Byte Data I/O Bi-directional 8-bit data path enabled only when BHE = LOW; supports independent upper/lower byte writes.
CE1 / CE2 Dual Chip Enable Inputs Active-Low CE1 and Active-High CE2 form logical CE = CE1 AND NOT(CE2); enables hierarchical memory decode with multiple SRAMs.
WE Write Enable Active-Low control initiating write cycle; latches data on rising edge of WE when CE is active.
OE Output Enable Active-Low control enabling output drivers; outputs enter high-Z when OE = HIGH or CE inactive.
BLE / BHE Byte Low/High Enable Independent active-Low controls for lower/upper byte write masking; eliminates need for external byte gating logic.
VCC / VSS Power / Ground Dual VCC pins (balls E1, G1) and three VSS balls (A1, H1, D3) provide low-impedance supply routing and noise suppression.

Key Features

Feature Design Value
15 ns access time at 3.3 V Enables zero-wait-state operation with ARM Cortex-M7 and RISC-V cores running at ≤66 MHz.
Dual CE architecture (CE1/CE2) Allows cascaded memory expansion using simple NAND/NOR address decoders without additional glue logic.
Independent byte write (BHE/BLE) Permits atomic 8-bit updates to 16-bit registers or buffers, reducing bus contention and software overhead.
1.0 V data retention Maintains valid memory contents during deep-sleep modes where main VCC drops to backup rail voltage.
20 µA typical ISB2 current Extends battery life in portable medical monitors and wireless sensor nodes requiring persistent RAM state.

Applications

Industrial PLC Data Buffering FPGA Co-Processor Memory

Use Scenario: Real-time I/O scan cycle in programmable logic controllers requires deterministic 16-bit word storage for analog input sampling and digital output staging.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-blocking read/write access with 15 ns tAA for sub-microsecond register updates.

Use Value: Eliminates FIFO latency bottlenecks in cyclic data acquisition, enabling 100+ kHz sampling rates with guaranteed data coherency.

Use Scenario: Offloading compute-intensive tasks from FPGA fabric to external memory-resident lookup tables and coefficient banks.

IC Role / Device Role / Timing Role: High-speed parallel memory interface serving as instruction/data cache for soft-core processors (e.g., MicroBlaze).

Use Value: Delivers 133 MB/s peak bandwidth (15 ns × 16 bits) to sustain sustained throughput for FFT and FIR filter pipelines.

Automotive ADAS Sensor Hub Medical Imaging Front-End

Use Scenario: Aggregating timestamped CAN/LIN messages and camera frame metadata before transmission to central domain controller.

IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining integrity across –40 °C to +85 °C ambient while supporting burst-mode logging.

Use Value: Ensures crash-data persistence during ignition cycling and meets ISO/TS 16949 thermal reliability requirements.

Use Scenario: Storing raw pixel data from ultrasound transducer arrays prior to DSP-based beamforming and image reconstruction.

IC Role / Device Role / Timing Role: Low-noise, low-power memory buffer minimizing EMI impact on sensitive analog front-end circuits.

Use Value: Achieves <10 µV RMS noise floor in VSS-supplied layout zones, preserving SNR in 12-bit ADC signal chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102416BLL-15NLI Same density and 15 ns speed, but single CE (CE# only); no BHE/BLE; 48-pin TSOP I package. Lacks byte-write flexibility; requires external logic for partial writes; better suited for cost-sensitive consumer boards. Select when board space permits TSOP and byte masking is handled in firmware or companion logic.
Winbond W9812G6JH-15 SDRAM (not SRAM); 16-bit bus, 128 Mbit; requires refresh and command sequencing; 54-pin TSOP II. Higher density but introduces timing complexity, clock tree design, and power management overhead. Choose only if >16 Mbit capacity is mandatory and system can accommodate SDRAM controller IP and refresh cycles.

Compared with IS61WV102416BLL-15NLI and W9812G6JH-15, CY7C1061GN18-15ZSXIT offers unique dual CE decode capability and true hardware byte write control - critical for deterministic real-time systems where software-managed masking adds jitter or latency.

Availability

CY7C1061GN18-15ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA co-processor memory, and automotive ADAS sensor hub applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1061GN18-15ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable system-on-chip, and USB-C/USB-PD solutions.

This device belongs to Cypress's legacy high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in industrial automation, test equipment, and communications infrastructure.

FAQ

What is the maximum operating frequency supported by CY7C1061GN18-15ZSXIT?

The device does not operate on a clock; it is an asynchronous SRAM. Its 15 ns access time (tAA) corresponds to a maximum effective interface rate of approximately 66.7 MHz when interfaced with a microcontroller or FPGA using standard address-valid-to-data-valid timing. No internal clock circuitry is present.

Does CY7C1061GN18-15ZSXIT require external pull-up resistors on CE1, CE2, or BHE/ BLE?

No external pull-ups are required. All control inputs (CE1, CE2, WE, OE, BHE, BLE) have internally biased TTL-compatible thresholds and do not rely on external biasing. However, floating inputs must be avoided per design best practice - tie unused control lines to defined logic levels.

Can CY7C1061GN18-15ZSXIT operate at 1.8 V?

No. The specified minimum VCC is 2.2 V per the Industrial operating range. While some units may function at 1.8 V, it violates the datasheet's absolute maximum ratings and invalidates timing guarantees, data retention, and ISB2 current specs. Use only within 2.2–3.6 V.

Is the 48-ball VFBGA package (BVJXI) compatible with standard reflow profiles?

Yes. The BVJXI package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C. Board layout must follow Cypress's recommended pad stack and stencil aperture guidelines for reliable solder joint formation.

CY7C1061GN18-15ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY7C1061GN18-15ZSXIT FAQ

1.How can I place an order for CY7C1061GN18-15ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GN18-15ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GN18-15ZSXIT reliable?

The price and inventory of CY7C1061GN18-15ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN18-15ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GN18-15ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN18-15ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GN18-15ZSXIT?

CY7C1061GN18-15ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GN18-15ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GN18-15ZSXIT?

For technical support, including CY7C1061GN18-15ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN18-15ZSXIT requirements.

6.How does Aetrix verify that CY7C1061GN18-15ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GN18-15ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN18-15ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GN18-15ZSXIT?

All CY7C1061GN18-15ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN18-15ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GN18-15ZSXIT part is unused and in its original packaging.

Return procedure for CY7C1061GN18-15ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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