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Infineon Technologies CY7C1061GN30-10BV1XI
- Part No.:
- CY7C1061GN30-10BV1XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GN30-10BV1XI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,313
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Product details
Overview
CY7C1061GN30-10BV1XI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with dual chip enable (CE1/CE2), 10 ns access time, 2.2–3.6 V operation, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It supports byte-wide writes via BHE/BLE controls and automatic power-down when deselected, deployed in industrial embedded controllers requiring fast, low-power, non-refresh memory.
For engineers reviewing the CY7C1061GN30-10BV1XI datasheet, CY7C1061GN30-10BV1XI pinout, CY7C1061GN30-10BV1XI application, or CY7C1061GN30-10BV1XI equivalent, key selection criteria include tAA = 10 ns access timing, ISB2 = 20 µA typical standby current, dual CE logic compatibility, and VFBGA-48 mechanical footprint for high-density PCB layouts.
Technical Context
This SRAM implements a fully decoded 20-bit address bus (A0–A19) supporting 1M-word addressing, with separate byte enable paths (BHE for I/O8–I/O15, BLE for I/O0–I/O7) enabling independent 8-bit writes without read-modify-write cycles. CE1/CE2 logic enables hierarchical memory mapping in multi-chip systems.
It operates across 2.2–3.6 V supply range with TTL-compatible I/O thresholds and supports data retention down to 1.0 V at ≤30 µA ICCDR. The device enters automatic CMOS standby (ISB2) when CE1 is HIGH or CE2 is LOW, eliminating external power management circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (1,048,576 words × 16 bits) - provides full 16-bit data bus interface without external width expansion |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states |
| Supply Voltage | 2.2 V to 3.6 V - compatible with both 2.5 V and 3.3 V system rails |
| Standby Current (ISB2) | 20 µA typical - reduces system-level quiescent power in sleep modes |
| Data Retention Voltage | 1.0 V - maintains stored data during brown-out or battery-backup scenarios |
| Package | 48-ball VFBGA (6 × 8 × 1.0 mm, BV1XI grade) - supports fine-pitch routing and thermal performance (θJA = 31.5 °C/W) |
| Input/Output Capacitance | 10 pF - minimizes signal integrity degradation on high-speed address/data buses |
Pinout & Package
Package: 48-ball VFBGA (6 × 8 × 1.0 mm), ball pitch 0.5 mm, BV1XI marking, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus decoding 1M-word space; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW and device selected |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW and device selected |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 + active-HIGH CE2 combination forms single logical CE; enables memory-mapped peripheral partitioning |
| WE | Write Enable | Active-LOW control initiating write cycle; overrides OE during concurrent access |
| OE | Output Enable | Active-LOW control enabling read data output; high-Z when deasserted or during write |
| BLE, BHE | Byte Low/High Enable | Independent 8-bit write masking - eliminates need for external byte-gating logic |
| VCC, VSS | Power Supply Pins | Two VCC and two VSS balls provide low-impedance supply distribution and reduce simultaneous switching noise |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time at 3.3 V | Enables zero-wait-state operation with ARM Cortex-M4/M7 and RISC-V cores running at ≤100 MHz |
| Dual chip enable (CE1/CE2) | Supports hierarchical memory decoding in multi-SRAM systems without external logic gates |
| Byte-wide write control (BHE/BLE) | Allows atomic 8-bit updates to 16-bit registers or buffers without read-modify-write overhead |
| 1.0 V data retention | Maintains memory contents during deep-sleep or backup-battery operation without refresh circuitry |
| CMOS standby current (ISB2 = 20 µA) | Reduces total system standby power by >95% compared to older 5 V SRAMs in always-on edge nodes |
Applications
| Industrial PLC Data Buffers | Medical Imaging Frame Stores |
|---|---|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: Asynchronous SRAM providing low-latency, non-refresh storage for I/O image tables and motion control command queues. Use Value: 10 ns tAA ensures sub-microsecond register update latency; dual CE allows isolation of safety-critical and non-critical memory regions. |
Use Scenario: Temporary frame storage in portable ultrasound devices where power efficiency and compact board area are critical. IC Role / Device Role / Timing Role: High-bandwidth pixel buffer interfacing directly to ADC/DAC chains and display controllers. Use Value: 16-bit bus width matches common imaging data paths; 1.0 V retention enables safe suspend-to-RAM during battery swaps. |
| Avionics Display Controllers | Test & Measurement Digitizers |
Use Scenario: Storing rendered GUI layers and overlay metadata in certified cockpit displays operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Radiation-tolerant (industrial-grade) SRAM serving as frame buffer and font cache with guaranteed timing margins. Use Value: VFBGA-48 package withstands thermal cycling; 2.2–3.6 V range accommodates aircraft 28 V DC-DC converter ripple. |
Use Scenario: Capturing high-speed analog samples in benchtop oscilloscopes before FFT processing or waveform export. IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to sampling clock with minimal setup/hold overhead. Use Value: Byte-enable capability allows selective capture of trigger-related sample windows without full-buffer overwrite. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | Same density, 10 ns access, but single CE input and 44-pin TSOP-II package | Lacks dual CE and byte-enable flexibility; requires external gating for byte writes | Select when board layout uses legacy TSOP footprints and hierarchical CE is unnecessary |
| Winbond W9825G6JH-10 | SDRAM (not SRAM); 16-bit bus, 10 ns tRC but requires refresh and command sequencing | Higher density per pin count but adds controller complexity and latency unpredictability | Select only if system already includes SDRAM controller and cost-per-bit is primary driver |
Compared with IS61WV102416BLL-10MLI, CY7C1061GN30-10BV1XI offers superior design flexibility via dual CE and true byte-write capability; versus W9825G6JH-10, it eliminates refresh overhead and guarantees deterministic access timing essential for real-time control loops.
Availability
CY7C1061GN30-10BV1XI is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, and avionics display controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant VFBGA packaging.
Supply support for CY7C1061GN30-10BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and communications infrastructure markets.
CY7C1061GN series targets high-performance, low-voltage embedded systems needing deterministic, non-refresh memory with flexible enable architecture and compact packaging.
FAQ
What is the maximum clock frequency supported for burst reads?
This is an asynchronous SRAM - it has no clock input. Data access is controlled solely by CE, OE, and WE timing. With tAA = 10 ns and tOH = 5 ns, it supports effective throughput up to 100 MHz when interfaced to a synchronous controller using appropriate address hold/setup margins and no wait states.
Can CY7C1061GN30-10BV1XI operate at 1.8 V?
No. The device's specified operating voltage range is 2.2 V to 3.6 V. At 1.8 V, VIH/VIL thresholds and output drive strength fall outside guaranteed specifications, and tAA degrades beyond 10 ns. For 1.8 V systems, consider Cypress's newer MoBL® SRAM family such as CY62167EV30.
Is the 48-ball VFBGA (BV1XI) pinout compatible with CY7C1061GN30-10BVXI?
No. BV1XI denotes dual CE (CE1/CE2) configuration in 6×8 mm VFBGA, while BVXI denotes dual CE in 8×9.5 mm VFBGA. Ball pitch and mechanical dimensions differ - they are not footprint-compatible. PCB layout must match the exact package variant ordered.
Does this SRAM require initialization or configuration before use?
No. As a classic asynchronous SRAM, it requires no initialization sequence, register programming, or mode setting. It functions immediately upon power-up once VCC stabilizes within specification and valid CE/OE/WE timing is applied. Data retention begins automatically when CE is deasserted.
CY7C1061GN30-10BV1XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GN30-10BV1XI FAQ
1.How can I place an order for CY7C1061GN30-10BV1XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10BV1XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GN30-10BV1XI reliable?
The price and inventory of CY7C1061GN30-10BV1XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10BV1XI is usually 5 days.
3.What payment methods are accepted for CY7C1061GN30-10BV1XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10BV1XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GN30-10BV1XI?
CY7C1061GN30-10BV1XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GN30-10BV1XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GN30-10BV1XI?
For technical support, including CY7C1061GN30-10BV1XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10BV1XI requirements.
6.How does Aetrix verify that CY7C1061GN30-10BV1XI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GN30-10BV1XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10BV1XI meets industry standards.
7.What is the process for return or replacement of CY7C1061GN30-10BV1XI?
All CY7C1061GN30-10BV1XI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10BV1XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GN30-10BV1XI part is unused and in its original packaging.
Return procedure for CY7C1061GN30-10BV1XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1061GN30-10BV1XI Tags
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