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Infineon Technologies CY7C1061GN30-10BV1XIT
- Part No.:
- CY7C1061GN30-10BV1XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GN30-10BV1XIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,540
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Product details
Overview
CY7C1061GN30-10BV1XIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with dual chip enable (CE1/CE2), 10 ns access time, 2.2–3.6 V operation, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It supports byte-wide writes via BHE/ BLE controls and automatic power-down when deselected, deployed in industrial embedded controllers requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1061GN30-10BV1XIT datasheet, CY7C1061GN30-10BV1XIT pinout, CY7C1061GN30-10BV1XIT application, or CY7C1061GN30-10BV1XIT equivalent, key selection criteria include tAA = 10 ns timing, ISB2 = 20 µA standby current, dual CE architecture for hierarchical memory mapping, and VFBGA-48 mechanical compatibility with space-constrained PCB layouts.
Technical Context
This SRAM implements a fully asynchronous interface with independent byte-enable control (BHE/BLE), enabling selective 8-bit writes to upper or lower data bytes without affecting adjacent bytes. Its dual CE logic (CE1 LOW + CE2 HIGH = active) allows cascaded memory bank selection in multi-chip systems.
It features TTL-compatible I/Os, 1.0 V data retention mode, and automatic CMOS standby entry when CE1/CE2 are deasserted - eliminating external power management circuitry. The device operates across industrial temperature (–40°C to +85°C) with guaranteed DC/AC specs at VCC = 2.2–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 words × 16 bits - provides 2 MB of non-volatile-retentive, random-access storage with no refresh overhead |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz bus systems without wait states |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with both 2.5 V and 3.3 V logic domains and mixed-voltage system designs |
| Standby Current (ISB2) | 20 µA (typ) - reduces system-level quiescent power in sleep modes without external gating |
| Data Retention Voltage | 1.0 V - maintains stored data during brown-out or battery-backup scenarios down to ultra-low supply |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade reliability in extended-environment applications |
| Package | 48-ball VFBGA (6 × 8 × 1.0 mm, BV1XI grade) - surface-mount footprint optimized for high-density routing and thermal dissipation |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.5 mm ball pitch, BV1XI marking (dual CE configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word decoding; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O7 | Data Bus (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Data Bus (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; independent read/write control from lower byte |
| CE1, CE2 | Dual Chip Enable Inputs | Active-Low CE1 and Active-High CE2 form AND-gated chip select; enables hierarchical memory banking and partial power-down |
| WE | Write Enable | Asynchronous write strobe - initiates write cycle when CE1/CE2 active and WE LOW; no write pulse width minimum specified |
| OE | Output Enable | Controls output buffer enable during read cycles; outputs enter high-Z when OE HIGH, regardless of CE state |
| BLE, BHE | Byte Low/High Enable | Independent 8-bit write masking - permits granular byte updates without read-modify-write sequences |
| VCC, VSS | Power Supply Pins | Two VCC (balls E1, H1) and three VSS (balls A1, D1, G1) provide low-inductance power distribution and noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time with 100 MHz operation | Enables zero-wait-state interfacing with high-speed microcontrollers and FPGAs without glue logic |
| Dual Chip Enable (CE1/CE2) | Supports up to four independent memory banks using shared address/data buses and decoded CE pairs |
| Independent byte write control (BHE/BLE) | Eliminates need for external byte-lane multiplexing or read-modify-write cycles in 16-bit systems |
| 20 µA typical CMOS standby current (ISB2) | Reduces idle power in always-on embedded systems - e.g., industrial PLCs with periodic wake-up intervals |
| 1.0 V data retention voltage | Preserves memory contents during main supply interruption, enabling fast resume from backup power sources |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and control logic state between scan cycles in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM providing deterministic 10 ns read/write latency for deterministic cyclic execution. Use Value: Eliminates bus arbitration delays and guarantees sub-microsecond memory access for hard real-time control loops. |
Use Scenario: Buffers uncompressed grayscale image frames (e.g., 1024×1024×16-bit) during acquisition in portable ultrasound devices. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame memory interfaced directly to image sensor controller and display pipeline. Use Value: Sustains 100 MB/s sustained throughput (10 ns × 16-bit × 100 MHz) without burst-mode constraints or prefetch overhead. |
| Avionics Data Logger | Test Equipment Pattern Memory |
|
Use Scenario: Captures flight parameter telemetry (altitude, attitude, engine metrics) at 1 kHz sampling rate with timestamped buffering. IC Role / Device Role / Timing Role: Non-refreshing memory retaining critical data during power loss, supported by 1.0 V retention mode. Use Value: Ensures crash survivability of last 30+ seconds of flight data even after main power failure or thermal shutdown. |
Use Scenario: Stores digital stimulus/response patterns for automated functional testing of ASICs and SoCs in ATE systems. IC Role / Device Role / Timing Role: Deterministic-access pattern store synchronized to high-speed test clock (≤100 MHz) with precise edge alignment. Use Value: Delivers jitter-free, repeatable vector delivery with no access-time variation - essential for timing-margin validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | Same density (1M×16), 10 ns access, but single CE input and no BHE/BLE - uses UB/LB pins instead | Lacks dual CE hierarchy; requires external logic for bank selection in multi-SRAM systems | Select when board layout favors TSOP-II package or when simplified CE control suffices |
| ON Semiconductor MC10EL1648DTG | ECL-based 1M×16 SRAM with 3.5 ns access, but requires –4.5 V supply and differential signaling | Targeted at RF test equipment and radar signal processing - not drop-in compatible | Choose only for ultra-low-jitter, sub-5 ns timing-critical applications with dedicated ECL infrastructure |
Compared with IS61WV102416BLL-10MLI, CY7C1061GN30-10BV1XIT offers finer-grained memory control via dual CE and independent byte enables; versus MC10EL1648DTG, it delivers industrial-voltage compatibility and lower system integration complexity at the cost of ~2.8× slower access.
Availability
CY7C1061GN30-10BV1XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and avionics data loggers requiring stable component supply, long-term lifecycle support, and verified VFBGA-48 assembly compatibility.
Supply support for CY7C1061GN30-10BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.
This device belongs to Cypress's legacy high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and precise timing control are mandatory.
FAQ
Is CY7C1061GN30-10BV1XIT pin-compatible with CY7C1061GN30-15BV1XIT?
No. While both share identical pinout and package (48-ball VFBGA BV1XI), the -10 variant guarantees 10 ns access time (tAA), whereas the -15 variant is rated for 15 ns. Timing-critical designs must verify setup/hold margins against the -10 spec; substituting -15 may cause bus timing violations at 100 MHz operation.
Does this SRAM require an external clock signal?
No. CY7C1061GN30-10BV1XIT is a fully asynchronous SRAM - all operations are controlled solely by CE1, CE2, WE, OE, BLE, and BHE level transitions. No clock input is present or required; timing depends only on propagation delays and specified AC parameters like tAA, tCO, and tHZ.
Can BHE and BLE be asserted simultaneously for full 16-bit access?
Yes. When both BHE and BLE are LOW, the entire 16-bit data bus (I/O0–I/O15) is enabled for concurrent read or write. This is the default mode for full-word transfers and is explicitly supported in the truth table and functional description of the datasheet.
What is the maximum junction temperature under continuous operation?
The maximum junction temperature is +125°C, derived from the absolute maximum rating "Ambient Temperature with Power Applied: –55°C to +125°C" and thermal resistance θJA = 31.50°C/W (VFBGA). At 90 mA ICC and 3.3 V, power dissipation is ~0.3 W, yielding ~9.5°C rise above ambient - well within safe operating limits at +85°C ambient.
CY7C1061GN30-10BV1XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GN30-10BV1XIT FAQ
1.How can I place an order for CY7C1061GN30-10BV1XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GN30-10BV1XIT reliable?
The price and inventory of CY7C1061GN30-10BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10BV1XIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GN30-10BV1XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10BV1XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GN30-10BV1XIT?
CY7C1061GN30-10BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GN30-10BV1XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GN30-10BV1XIT?
For technical support, including CY7C1061GN30-10BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10BV1XIT requirements.
6.How does Aetrix verify that CY7C1061GN30-10BV1XIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GN30-10BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10BV1XIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GN30-10BV1XIT?
All CY7C1061GN30-10BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10BV1XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GN30-10BV1XIT part is unused and in its original packaging.
Return procedure for CY7C1061GN30-10BV1XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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