Infineon Technologies CY7C1061GN30-10BVJXI

Overview

CY7C1061GN30-10BVJXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with dual chip enable (CE1/CE2), 10 ns access time, 2.2–3.6 V supply operation, and 48-ball VFBGA (8 × 9.5 × 1 mm) packaging. It serves as high-speed, low-power data buffer or working memory in industrial controllers and FPGA co-processor subsystems.

For engineers reviewing the CY7C1061GN30-10BVJXI datasheet, CY7C1061GN30-10BVJXI pinout, CY7C1061GN30-10BVJXI application, or CY7C1061GN30-10BVJXI equivalent, key selection criteria include tAA = 10 ns access timing, ISB2 = 20 µA typical standby current, dual CE architecture for hierarchical memory mapping, and VFBGA-48 mechanical compatibility with space-constrained embedded PCB layouts.

Technical Context

This SRAM implements full asynchronous read/write control with independent byte enables (BHE/BLE) for 16-bit data bus partitioning, enabling efficient 8-bit peripheral interfacing without external glue logic. Its dual CE inputs allow cascaded memory decoding-CE1 active-low and CE2 active-high form a logical AND gate to assert chip select only when both are asserted.

Operation supports automatic power-down on deselection (ISB2 = 20 µA typ at VCC = 3.3 V), 1.0 V data retention mode, and TTL-compatible I/O levels across 2.2–3.6 V VCC range. Input leakage (±1 µA) and output leakage (±1 µA) meet industrial-grade noise immunity requirements.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (8 × 9.5 × 1 mm), ball pitch 0.8 mm, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT28EW128ABA1HPC-0SIT, CY7C1061GN30-10BVJXI uniquely balances 10 ns parallel access, byte-select granularity, and industrial temperature support-making it optimal for deterministic real-time buffering where latency predictability outweighs density or interface simplicity.

Availability

CY7C1061GN30-10BVJXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, automotive ADAS ECUs, and FPGA-based acceleration platforms requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GN30-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on low-power, robust timing, and long-lifecycle support.

The CY7C1061GN series targets high-speed parallel memory applications demanding deterministic access, low standby power, and industrial-grade reliability-specifically engineered for real-time control and data acquisition systems where SRAM volatility is acceptable but latency is critical.

FAQ

What is the maximum clock frequency supported for continuous read/write operations?

This is an asynchronous SRAM-no clock input is required. Operation is controlled solely by address setup/hold times and CE/OE/WE timing. At tAA = 10 ns, it supports effective burst transfer rates up to 100 MHz on the address/data bus, provided AC timing parameters (tCO, tOH, tHZ, etc.) are met per the datasheet's switching characteristics table.

Can CY7C1061GN30-10BVJXI operate at 1.8 V supply voltage?

No. The device requires minimum VCC = 2.2 V for guaranteed operation across the full industrial temperature range. While DC characteristics specify 1.65–2.2 V for some parameters, the functional operating range begins at 2.2 V per the "Operating Range" table on page 6 of the datasheet-1.8 V falls outside validated specification.

How does the dual CE (CE1/CE2) configuration affect memory mapping in a microcontroller system?

CE1 (active-LOW) and CE2 (active-HIGH) form a logical AND function: the device is selected only when CE1 = LOW and CE2 = HIGH. This allows one address line to drive CE2 while higher-order address bits decode CE1, enabling clean 1 MB memory windows without overlapping decode logic or requiring additional NAND gates.

Is the 48-ball VFBGA package (BVJXI) compatible with standard reflow profiles for lead-free assembly?

Yes. The BVJXI package is Pb-free and qualified for JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 30 seconds. Thermal resistance data (θJA = 31.5 °C/W) confirms suitability for convection-reflow processes on standard FR-4 PCBs with appropriate padstack design and solder mask defined lands.