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Infineon Technologies CY7C1061GN30-10BVJXIT

Part No.:
CY7C1061GN30-10BVJXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061GN30-10BVJXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,855

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Product details

Overview

CY7C1061GN30-10BVJXIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operation, dual chip enable (CE1/CE2), and byte-wide write control via BHE/BLE. It delivers 90 mA active current at 100 MHz and supports data retention down to 1.0 V in low-power hold mode. Used in industrial embedded controllers requiring fast, non-volatile-critical SRAM buffering.

For engineers reviewing the CY7C1061GN30-10BVJXIT datasheet, CY7C1061GN30-10BVJXIT pinout, CY7C1061GN30-10BVJXIT application, or CY7C1061GN30-10BVJXIT equivalent, key selection criteria include tAA = 10 ns timing, dual CE architecture for hierarchical memory decoding, VFBGA-48 (BVJX) package compatibility, and 1.0 V data retention capability under power loss scenarios.

Technical Context

This SRAM implements a fully asynchronous interface with independent high- and low-byte write enables (BHE, BLE) and dual chip enables (CE1, CE2) that form a logical AND gate for device selection. Address decoding covers A0–A19 (20-bit), supporting full 1M-word addressing without external address latching.

It operates across two voltage domains: 2.2–3.6 V for active read/write and 1.0 V minimum for data retention. Power-down is automatic upon CE deassertion, with ISB2 = 20 mA (typ) standby current under CMOS input conditions, enabling low-quiescent designs in battery-backed systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16 Mbit (1,048,576 × 16 bits) - supports 2-byte aligned data transfers without splitting across devices
Access Time (tAA)10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states
Supply Voltage Range2.2 V to 3.6 V - compatible with modern low-voltage I/O standards including 2.5 V and 3.3 V systems
Active Current (ICC)90 mA at 100 MHz - defines thermal budget for sustained burst reads/writes in compact PCB layouts
Data Retention Voltage1.0 V - allows backup from supercapacitors or coin cells during main power failure
Standby Current (ISB2)20 mA (typ) - enables ultra-low-power sleep modes in portable industrial HMI and sensor nodes
Input/Output CompatibilityTTL-compatible - ensures interoperability with legacy 5 V-tolerant logic without level shifters

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 mm × 9.5 mm × 1.0 mm, Package ID BVJXI (dual CE configuration).

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus supporting full 1M-word decoding; no multiplexing required
I/O0–I/O7Low-Byte Data I/OBi-directional 8-bit data path enabled when BLE = LOW during read/write
I/O8–I/O15High-Byte Data I/OBi-directional 8-bit data path enabled when BHE = LOW during read/write
CE1, CE2Dual Chip Enable InputsLogical AND activation: CE1 = LOW & CE2 = HIGH selects device; enables hierarchical memory mapping
WEWrite EnableActive-LOW signal controlling write cycle initiation; synchronous with address and data setup
OEOutput EnableActive-LOW control for output buffer enable; decouples read timing from chip select
BLE, BHEByte Low/High EnableIndependent 8-bit write masking - eliminates need for external byte-select logic
VCC, VSSPower Supply PinsTwo VCC and two VSS balls provide low-impedance supply routing and reduced simultaneous switching noise

Key Features

FeatureDesign Value
10 ns access time with 100 MHz operationEnables zero-wait-state interfacing with ARM Cortex-M7 and RISC-V MCU buses running at peak frequency
Dual chip enable (CE1/CE2) logicSupports multi-SRAM bank decoding using one enable line per bank, reducing FPGA or CPLD pin count
Independent BHE/BLE byte controlsAllows mixed-endian or partial-word writes without external gating logic or data bus transceivers
1.0 V data retentionPermits use with single-cell LiFePO₄ or supercapacitor backup, eliminating dedicated RTC batteries
48-ball VFBGA (BVJX) packageReduces PCB area by >40% vs. TSOP II while maintaining thermal resistance θJA = 31.5 °C/W

Applications

Industrial PLC Data BufferingMedical Imaging Frame Store

Use Scenario: Real-time I/O scan buffering in DIN-rail programmable logic controllers with deterministic 10 ms cycle times.

IC Role / Device Role / Timing Role: High-speed scratchpad memory holding process image data between CPU fetch and field I/O update phases.

Use Value: 10 ns tAA ensures sub-microsecond read latency for status polling loops, improving scan cycle margin by 12% over 15 ns alternatives.

Use Scenario: Temporary frame storage in portable ultrasound machines during echo signal digitization and beamforming.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer for ADC sample capture and DSP preprocessing pipelines.

Use Value: Byte-enable (BHE/BLE) support allows concurrent 8-bit pixel stream ingestion and 16-bit coefficient loading without bus contention.

Avionics Sensor Fusion HubRuggedized Edge Gateway Cache

Use Scenario: Time-critical fusion of GPS, IMU, and barometric sensor streams in UAV flight controllers operating at –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM preserving last-known state during brownout events lasting up to 500 ms.

Use Value: 1.0 V data retention threshold enables reliable hold using 0.47 F supercapacitors charged from 3.3 V rail, cutting BOM cost vs. NVSRAM.

Use Scenario: Local cache for MQTT message queuing in oilfield RTUs exposed to wide temperature swings and EMI.

IC Role / Device Role / Timing Role: High-reliability SRAM storing unsent telemetry packets during cellular network outages.

Use Value: Dual CE architecture allows isolation from host processor during firmware updates, preventing packet loss during reset sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C1008-10TIN1 M × 8 organization, 10 ns, 2.7–3.6 V only, single CE, no byte enablesRequires two devices for 16-bit width; lacks BHE/BLE for partial writesSelect only if system uses 8-bit data bus or accepts doubled component count and added decode logic
IS61WV102416BLL-10MLI1 M × 16, 10 ns, 3.3 V only, single CE, TTL-compatible, no data retention spec below 2.0 VNo guaranteed 1.0 V retention; incompatible with sub-2.2 V backup sourcesPrefer when board already uses 3.3 V-only power rails and does not require brownout data hold

Compared with AS6C1008-10TIN and IS61WV102416BLL-10MLI, CY7C1061GN30-10BVJXIT uniquely combines dual CE, byte enables, and 1.0 V data retention in a single 16-bit VFBGA package-critical for space-constrained, power-interruption-resilient industrial designs.

Availability

CY7C1061GN30-10BVJXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame store, and avionics sensor fusion hubs requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for CY7C1061GN30-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on reliability and low-power innovation.

CY7C1061GN series belongs to Cypress's parallel SRAM product line, engineered for deterministic timing, robust data retention, and seamless integration into real-time embedded systems with strict power and footprint constraints.

FAQ

What is the maximum clock frequency supported for continuous read/write bursts?

This is an asynchronous SRAM with no internal clock. Its 10 ns access time (tAA) and 10 ns output hold time (tOH) allow interfacing with microcontrollers or FPGAs operating bus frequencies up to 100 MHz, provided address/data setup/hold times are met. No external clock signal is required or accepted.

Does CY7C1061GN30-10BVJXIT support true dual-port operation?

No. It is a single-port asynchronous SRAM with one shared address/data bus. While BHE and BLE enable independent byte writes, it does not support simultaneous read and write operations on separate ports. For true dual-port functionality, Cypress's CY7C1356 or similar devices must be selected.

Can CE1 and CE2 be tied together for single-enable operation?

Yes, but only with external inversion: CE2 must be held HIGH (e.g., pulled to VCC) while CE1 serves as the sole chip enable. Direct tying of CE1 and CE2 violates the required logic condition (CE1 = LOW & CE2 = HIGH), causing permanent deselection. A simple inverter on CE2 enables standard single-CE usage.

Is the 48-ball VFBGA (BVJX) package RoHS and REACH compliant?

Yes. Per Cypress's ordering code suffix "XIT", this variant is lead-free (Pb-free), RoHS-compliant, and meets REACH SVHC requirements. The "T" denotes tape-and-reel packaging, and "I" indicates industrial temperature grade (–40 °C to +85 °C), both confirmed in the official datasheet revision *C.

CY7C1061GN30-10BVJXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061GN30-10BVJXIT FAQ

1.How can I place an order for CY7C1061GN30-10BVJXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10BVJXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GN30-10BVJXIT reliable?

The price and inventory of CY7C1061GN30-10BVJXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10BVJXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061GN30-10BVJXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10BVJXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GN30-10BVJXIT?

CY7C1061GN30-10BVJXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GN30-10BVJXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GN30-10BVJXIT?

For technical support, including CY7C1061GN30-10BVJXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10BVJXIT requirements.

6.How does Aetrix verify that CY7C1061GN30-10BVJXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061GN30-10BVJXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10BVJXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061GN30-10BVJXIT?

All CY7C1061GN30-10BVJXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10BVJXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GN30-10BVJXIT part is unused and in its original packaging.

Return procedure for CY7C1061GN30-10BVJXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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