Infineon Technologies CY7C1061GN30-10BVJXIT
- Part No.:
- CY7C1061GN30-10BVJXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1061GN30-10BVJXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1061GN30-10BVJXIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operation, dual chip enable (CE1/CE2), and byte-wide write control via BHE/BLE. It delivers 90 mA active current at 100 MHz and supports data retention down to 1.0 V in low-power hold mode. Used in industrial embedded controllers requiring fast, non-volatile-critical SRAM buffering.
For engineers reviewing the CY7C1061GN30-10BVJXIT datasheet, CY7C1061GN30-10BVJXIT pinout, CY7C1061GN30-10BVJXIT application, or CY7C1061GN30-10BVJXIT equivalent, key selection criteria include tAA = 10 ns timing, dual CE architecture for hierarchical memory decoding, VFBGA-48 (BVJX) package compatibility, and 1.0 V data retention capability under power loss scenarios.
Technical Context
This SRAM implements a fully asynchronous interface with independent high- and low-byte write enables (BHE, BLE) and dual chip enables (CE1, CE2) that form a logical AND gate for device selection. Address decoding covers A0–A19 (20-bit), supporting full 1M-word addressing without external address latching.
It operates across two voltage domains: 2.2–3.6 V for active read/write and 1.0 V minimum for data retention. Power-down is automatic upon CE deassertion, with ISB2 = 20 mA (typ) standby current under CMOS input conditions, enabling low-quiescent designs in battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 bits) - supports 2-byte aligned data transfers without splitting across devices |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with modern low-voltage I/O standards including 2.5 V and 3.3 V systems |
| Active Current (ICC) | 90 mA at 100 MHz - defines thermal budget for sustained burst reads/writes in compact PCB layouts |
| Data Retention Voltage | 1.0 V - allows backup from supercapacitors or coin cells during main power failure |
| Standby Current (ISB2) | 20 mA (typ) - enables ultra-low-power sleep modes in portable industrial HMI and sensor nodes |
| Input/Output Compatibility | TTL-compatible - ensures interoperability with legacy 5 V-tolerant logic without level shifters |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 mm × 9.5 mm × 1.0 mm, Package ID BVJXI (dual CE configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word decoding; no multiplexing required |
| I/O0–I/O7 | Low-Byte Data I/O | Bi-directional 8-bit data path enabled when BLE = LOW during read/write |
| I/O8–I/O15 | High-Byte Data I/O | Bi-directional 8-bit data path enabled when BHE = LOW during read/write |
| CE1, CE2 | Dual Chip Enable Inputs | Logical AND activation: CE1 = LOW & CE2 = HIGH selects device; enables hierarchical memory mapping |
| WE | Write Enable | Active-LOW signal controlling write cycle initiation; synchronous with address and data setup |
| OE | Output Enable | Active-LOW control for output buffer enable; decouples read timing from chip select |
| BLE, BHE | Byte Low/High Enable | Independent 8-bit write masking - eliminates need for external byte-select logic |
| VCC, VSS | Power Supply Pins | Two VCC and two VSS balls provide low-impedance supply routing and reduced simultaneous switching noise |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time with 100 MHz operation | Enables zero-wait-state interfacing with ARM Cortex-M7 and RISC-V MCU buses running at peak frequency |
| Dual chip enable (CE1/CE2) logic | Supports multi-SRAM bank decoding using one enable line per bank, reducing FPGA or CPLD pin count |
| Independent BHE/BLE byte controls | Allows mixed-endian or partial-word writes without external gating logic or data bus transceivers |
| 1.0 V data retention | Permits use with single-cell LiFePO₄ or supercapacitor backup, eliminating dedicated RTC batteries |
| 48-ball VFBGA (BVJX) package | Reduces PCB area by >40% vs. TSOP II while maintaining thermal resistance θJA = 31.5 °C/W |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O scan buffering in DIN-rail programmable logic controllers with deterministic 10 ms cycle times. IC Role / Device Role / Timing Role: High-speed scratchpad memory holding process image data between CPU fetch and field I/O update phases. Use Value: 10 ns tAA ensures sub-microsecond read latency for status polling loops, improving scan cycle margin by 12% over 15 ns alternatives. | Use Scenario: Temporary frame storage in portable ultrasound machines during echo signal digitization and beamforming. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer for ADC sample capture and DSP preprocessing pipelines. Use Value: Byte-enable (BHE/BLE) support allows concurrent 8-bit pixel stream ingestion and 16-bit coefficient loading without bus contention. |
| Avionics Sensor Fusion Hub | Ruggedized Edge Gateway Cache |
Use Scenario: Time-critical fusion of GPS, IMU, and barometric sensor streams in UAV flight controllers operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM preserving last-known state during brownout events lasting up to 500 ms. Use Value: 1.0 V data retention threshold enables reliable hold using 0.47 F supercapacitors charged from 3.3 V rail, cutting BOM cost vs. NVSRAM. | Use Scenario: Local cache for MQTT message queuing in oilfield RTUs exposed to wide temperature swings and EMI. IC Role / Device Role / Timing Role: High-reliability SRAM storing unsent telemetry packets during cellular network outages. Use Value: Dual CE architecture allows isolation from host processor during firmware updates, preventing packet loss during reset sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 1 M × 8 organization, 10 ns, 2.7–3.6 V only, single CE, no byte enables | Requires two devices for 16-bit width; lacks BHE/BLE for partial writes | Select only if system uses 8-bit data bus or accepts doubled component count and added decode logic |
| IS61WV102416BLL-10MLI | 1 M × 16, 10 ns, 3.3 V only, single CE, TTL-compatible, no data retention spec below 2.0 V | No guaranteed 1.0 V retention; incompatible with sub-2.2 V backup sources | Prefer when board already uses 3.3 V-only power rails and does not require brownout data hold |
Compared with AS6C1008-10TIN and IS61WV102416BLL-10MLI, CY7C1061GN30-10BVJXIT uniquely combines dual CE, byte enables, and 1.0 V data retention in a single 16-bit VFBGA package-critical for space-constrained, power-interruption-resilient industrial designs.
Availability
CY7C1061GN30-10BVJXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame store, and avionics sensor fusion hubs requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for CY7C1061GN30-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on reliability and low-power innovation.
CY7C1061GN series belongs to Cypress's parallel SRAM product line, engineered for deterministic timing, robust data retention, and seamless integration into real-time embedded systems with strict power and footprint constraints.
FAQ
What is the maximum clock frequency supported for continuous read/write bursts?
This is an asynchronous SRAM with no internal clock. Its 10 ns access time (tAA) and 10 ns output hold time (tOH) allow interfacing with microcontrollers or FPGAs operating bus frequencies up to 100 MHz, provided address/data setup/hold times are met. No external clock signal is required or accepted.
Does CY7C1061GN30-10BVJXIT support true dual-port operation?
No. It is a single-port asynchronous SRAM with one shared address/data bus. While BHE and BLE enable independent byte writes, it does not support simultaneous read and write operations on separate ports. For true dual-port functionality, Cypress's CY7C1356 or similar devices must be selected.
Can CE1 and CE2 be tied together for single-enable operation?
Yes, but only with external inversion: CE2 must be held HIGH (e.g., pulled to VCC) while CE1 serves as the sole chip enable. Direct tying of CE1 and CE2 violates the required logic condition (CE1 = LOW & CE2 = HIGH), causing permanent deselection. A simple inverter on CE2 enables standard single-CE usage.
Is the 48-ball VFBGA (BVJX) package RoHS and REACH compliant?
Yes. Per Cypress's ordering code suffix "XIT", this variant is lead-free (Pb-free), RoHS-compliant, and meets REACH SVHC requirements. The "T" denotes tape-and-reel packaging, and "I" indicates industrial temperature grade (–40 °C to +85 °C), both confirmed in the official datasheet revision *C.
CY7C1061GN30-10BVJXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GN30-10BVJXIT FAQ
1.How can I place an order for CY7C1061GN30-10BVJXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10BVJXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GN30-10BVJXIT reliable?
The price and inventory of CY7C1061GN30-10BVJXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10BVJXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GN30-10BVJXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10BVJXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GN30-10BVJXIT?
CY7C1061GN30-10BVJXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GN30-10BVJXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GN30-10BVJXIT?
For technical support, including CY7C1061GN30-10BVJXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10BVJXIT requirements.
6.How does Aetrix verify that CY7C1061GN30-10BVJXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GN30-10BVJXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10BVJXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GN30-10BVJXIT?
All CY7C1061GN30-10BVJXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10BVJXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GN30-10BVJXIT part is unused and in its original packaging.
Return procedure for CY7C1061GN30-10BVJXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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