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Infineon Technologies CY7C1061GN30-10BVXI

Part No.:
CY7C1061GN30-10BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061GN30-10BVXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,886

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Product details

Overview

CY7C1061GN30-10BVXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operating voltage, dual chip enable (CE1/CE2), and 48-ball VFBGA (8 × 9.5 × 1 mm) package. It supports byte-wide writes via BHE/BLE controls and automatic power-down when deselected, deployed in industrial embedded controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1061GN30-10BVXI datasheet, CY7C1061GN30-10BVXI pinout, CY7C1061GN30-10BVXI application, or CY7C1061GN30-10BVXI equivalent, key selection criteria include tAA ≤ 10 ns, ISB2 = 20 mA (typ), 1.0 V data retention capability, dual CE logic compatibility, and VFBGA thermal resistance (θJA = 31.5 °C/W).

Technical Context

This SRAM implements a fully decoded 20-bit address bus (A0–A19) for 1M-word addressing and a 16-bit bidirectional I/O bus (I/O0–I/O15) partitioned into high/low bytes via BHE and BLE. Read/write operations are controlled by independent OE, WE, CE1, and CE2 signals with TTL-compatible input thresholds and CMOS-level output drive.

Power management relies on dual CE logic: CE1 LOW + CE2 HIGH enables memory, while CE1 HIGH or CE2 LOW forces automatic CMOS standby (ISB2 = 20 mA typ). Data retention operates down to 1.0 V with no clock or refresh required, supporting battery-backed hold modes in power-constrained systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits) - provides full 16-bit parallel interface without external data multiplexing
Access Time (tAA) 10 ns - guarantees sub-100 MHz synchronous bus timing margin for FPGA or microcontroller interfaces
Supply Voltage Range 2.2 V to 3.6 V - compatible with both 2.5 V and 3.3 V system rails, eliminating level-shifting in mixed-voltage designs
Standby Current (ISB2) 20 mA (typ) at max VCC - enables ultra-low-power hold mode during processor sleep without external power gating
Data Retention Voltage 1.0 V - sustains stored data through brown-out events or backup battery operation below nominal supply
Package 48-ball VFBGA (8 × 9.5 × 1 mm, BVXI) - delivers 31.5 °C/W junction-to-ambient thermal resistance for compact industrial PCB layouts
I/O Capacitance 10 pF - minimizes signal integrity degradation on high-speed address/data buses up to 100 MHz

Pinout & Package

Package: 48-ball VFBGA (8 × 9.5 × 1 mm), ball pitch 0.8 mm, RoHS-compliant, moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus selecting one of 1,048,576 memory locations; no internal latching - requires stable address before CE/WE assertion
I/O0–I/O7 Low-Byte Bidirectional Data Driven during read when BLE = LOW; latched during write when BLE = LOW and WE = LOW
I/O8–I/O15 High-Byte Bidirectional Data Driven during read when BHE = LOW; latched during write when BHE = LOW and WE = LOW
CE1 / CE2 Dual Chip Enable Inputs Active-LOW CE1 and active-HIGH CE2 form logical CE = CE1 AND NOT(CE2); enables memory only when CE1 = LOW and CE2 = HIGH
WE Write Enable Input Active-LOW control: initiates write cycle when CE1 = LOW, CE2 = HIGH, and WE = LOW; disables outputs during write
OE Output Enable Input Active-LOW control: enables I/O drivers during read when CE1 = LOW, CE2 = HIGH, and OE = LOW; places I/O in Hi-Z when HIGH
BLE / BHE Byte Low/High Enable Inputs Independent active-LOW controls for 8-bit granularity writes/reads - allows partial-word updates without disturbing adjacent bytes
VCC / VSS Power / Ground Two VCC balls (B1, H1) and three VSS balls (D1, G1, H2) provide low-inductance decoupling for noise-sensitive SRAM operation

Key Features

Feature Design Value
10 ns access time with 100 MHz operation Enables direct interfacing with high-speed microcontrollers (e.g., ARM Cortex-M7, RISC-V cores) without wait states
Dual chip enable (CE1/CE2) logic Supports hierarchical memory decoding in multi-SRAM systems - CE2 can be tied to upper address bits for seamless bank selection
Independent byte write control (BHE/BLE) Eliminates need for external byte masking logic - reduces PCB area and routing complexity in 16-bit data path designs
1.0 V data retention Permits use with single-cell Li-ion or coin-cell backup without boost converters - extends hold time in portable instrumentation
Automatic power-down on deselect Reduces system standby power by >99% versus always-on SRAMs - critical for fanless industrial gateways with 24/7 uptime requirements

Applications

Industrial PLC I/O Modules Medical Imaging Buffer Memory

Use Scenario: Real-time acquisition and buffering of analog sensor inputs (e.g., 16-channel ADC streams at 1 MSPS) before DSP processing.

IC Role / Device Role / Timing Role: Asynchronous buffer memory providing zero-wait-state 16-bit parallel access for burst-mode data capture.

Use Value: 10 ns tAA ensures full utilization of ADC throughput without pipeline stalls; dual CE enables isolation from main CPU bus during firmware updates.

Use Scenario: Temporary storage of uncompressed ultrasound frame data (1024 × 768 × 16-bit) during real-time beamforming.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer interfaced directly to FPGA pixel engines.

Use Value: 100 MHz operation supports >1.6 GB/s sustained bandwidth; 48-ball VFBGA enables dense placement near FPGA BGA packages.

Avionics Flight Data Recorders Test & Measurement Digitizers

Use Scenario: Non-volatile event logging under extreme temperature cycling (−40 °C to +85 °C) with battery-backed retention.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM holding critical flight parameters during power loss.

Use Value: 1.0 V data retention allows operation from supercapacitor backup; ISB2 = 20 mA (typ) extends hold time beyond 72 hours.

Use Scenario: High-fidelity waveform capture at 250 MS/s with 16-bit resolution, requiring deep on-board memory for trigger pre/post storage.

IC Role / Device Role / Timing Role: Deterministic latency memory for real-time digital oscilloscope front-end buffering.

Use Value: Sub-10 ns access ensures precise timestamp alignment across multiple channels; low I/O capacitance preserves signal edge fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102416BLL-10MLI 10 ns tAA, same density and VFBGA-48, but single CE (no CE2) and higher ISB2 = 45 mA (typ) Lacks dual CE logic - requires external gating for multi-bank decode; less suitable for complex memory maps Select when board space permits simpler CE logic and standby current is not critical
Winbond W9825G6JH-10 SDRAM (not SRAM), 16-bit bus, 256 Mbit, 10 ns CL - requires refresh controller and initialization sequence Not drop-in compatible - demands memory controller support, increases firmware complexity and boot time Choose only when cost-per-bit outweighs deterministic timing and design simplicity requirements

Compared with IS61WV102416BLL-10MLI, CY7C1061GN30-10BVXI offers superior power efficiency in standby and flexible dual CE decoding; versus W9825G6JH-10, it eliminates refresh overhead and guarantees fixed latency - essential for hard real-time systems.

Availability

CY7C1061GN30-10BVXI is available at Aetrix Electronics and suitable for industrial PLC I/O modules, medical imaging buffers, avionics data loggers, and test equipment digitizers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061GN30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with global manufacturing and qualification per AEC-Q100 and JESD22 standards.

CY7C1061GN30-10BVXI belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in resource-constrained embedded systems without refresh or configuration overhead.

FAQ

Is CY7C1061GN30-10BVXI pin-compatible with other densities in the CY7C1061x series?

No. While CY7C1061GN30-10BVXI shares the 48-ball VFBGA (BVXI) footprint with CY7C1061DN30-10BVXI (8-Mbit variant), pin assignments differ for address lines A16–A19 and I/O functions. The 16-Mbit version uses all 20 address bits (A0–A19), whereas lower-density variants leave A16–A19 unconnected or repurposed - direct substitution risks address decoding errors.

Does this SRAM require an external clock or initialization sequence?

No. CY7C1061GN30-10BVXI is a fully asynchronous static RAM with no clock input, no reset pin, and no initialization requirement. It enters operational mode immediately upon stable VCC (2.2–3.6 V) and valid CE/WE/OE control - ideal for systems where boot-time determinism is critical.

Can BHE and BLE be used simultaneously for full 16-bit access?

Yes. When both BHE and BLE are driven LOW, the entire 16-bit I/O bus (I/O0–I/O15) becomes active for simultaneous read or write. This enables full-word transfers matching microcontroller or FPGA native word widths without software byte-splitting overhead.

What is the maximum supported clock frequency for reliable operation?

The device has no clock input, but its AC timing supports reliable operation up to 100 MHz bus frequency. This is validated by ICC = 90 mA (typ) at f = 100 MHz and tAA = 10 ns - meaning address setup/hold and data valid windows are met for synchronous interfaces running at 10 ns cycle time.

CY7C1061GN30-10BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1061GN30-10BVXI FAQ

1.How can I place an order for CY7C1061GN30-10BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GN30-10BVXI reliable?

The price and inventory of CY7C1061GN30-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10BVXI is usually 5 days.

3.What payment methods are accepted for CY7C1061GN30-10BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GN30-10BVXI?

CY7C1061GN30-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GN30-10BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GN30-10BVXI?

For technical support, including CY7C1061GN30-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10BVXI requirements.

6.How does Aetrix verify that CY7C1061GN30-10BVXI is sourced from the original manufacturer or authorized distributors?

All CY7C1061GN30-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10BVXI meets industry standards.

7.What is the process for return or replacement of CY7C1061GN30-10BVXI?

All CY7C1061GN30-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GN30-10BVXI part is unused and in its original packaging.

Return procedure for CY7C1061GN30-10BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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