Infineon Technologies CY7C1061GN30-10BVXIT

Overview

CY7C1061GN30-10BVXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operating voltage, and dual Chip Enable (CE1/CE2) architecture. It supports byte-wide writes via BHE/BLE controls, delivers 90 mA active current at 100 MHz, and enters low-power data retention mode at 1.0 V - deployed in industrial embedded controllers requiring fast, nonvolatile-critical buffer memory.

For engineers reviewing the CY7C1061GN30-10BVXIT datasheet, CY7C1061GN30-10BVXIT pinout, CY7C1061GN30-10BVXIT application, or CY7C1061GN30-10BVXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA standby current, dual CE logic compatibility, and VFBGA-48 package footprint for space-constrained PCB layouts.

Technical Context

The device implements a fully asynchronous SRAM core with independent high- and low-byte write enables (BHE/BLE), enabling partial-word updates without read-modify-write cycles. Its dual CE architecture (CE1 LOW + CE2 HIGH for enable) allows hierarchical memory banking and seamless expansion across multiple devices.

It features automatic power-down when deselected, TTL-compatible I/Os, and guaranteed data retention at 1.0 V - supporting fail-safe state preservation during brown-out conditions. All timing parameters are specified over –40°C to +85°C and 2.2–3.6 V supply range, with AC characteristics validated using 5 pF load and 3 ns signal transition.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 mm × 9.5 mm × 1 mm, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with IS61WV102416BLL-10MLI and NVTFS1616L-10T3G, CY7C1061GN30-10BVXIT uniquely balances 10 ns speed, dual-byte control, wide VCC range, and compact VFBGA - making it optimal for thermally constrained, multi-bank industrial systems where flexibility and footprint matter.

Availability

CY7C1061GN30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1061GN30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on robustness and long-term supply stability.

The CY7C1061GN30 belongs to Cypress's high-speed asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and precise timing control are essential.

FAQ

Is CY7C1061GN30-10BVXIT pin-compatible with CY7C1061DV33-10ZSXI?

No. CY7C1061GN30-10BVXIT uses a 48-ball VFBGA package with specific ball assignments for CE1/CE2, BHE/BLE, and I/O grouping. CY7C1061DV33-10ZSXI is a 54-pin TSOP II device with different pinout, voltage range (3.3 V only), and single CE architecture - mechanical and electrical incompatibility prevents direct replacement.

Does this SRAM require an external clock or refresh circuitry?

No. The CY7C1061GN30-10BVXIT is a fully asynchronous static RAM - it operates without any clock signal and requires no refresh cycles. All operations are controlled solely by CE1, CE2, WE, OE, BHE, and BLE timing, making it ideal for systems with irregular or event-driven memory access patterns.

What is the maximum supported bus frequency when interfacing with an FPGA?

With tRC = 10 ns, the device supports sustained 100 MHz random read/write cycles. When used with FPGA logic implementing proper setup/hold timing (e.g., tSD = 5 ns, tHA = 0 ns), it achieves reliable operation at 100 MHz bus clocks - verified across –40°C to +85°C and 2.2–3.6 V supply range per datasheet AC specifications.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW enables concurrent write access to all 16 I/O lines (I/O0–I/O15). This is the standard mode for full-word writes and is explicitly supported in the functional description and truth table - no timing penalty or conflict occurs when both byte enables are active.