Infineon Technologies CY7C1061GN30-10ZSXI

Overview

CY7C1061GN30-10ZSXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, and dual Chip Enable (CE1/CE2) architecture. It supports byte-wide writes via BHE/BLE controls, delivers 90 mA active current at 100 MHz, and features 1.0 V data retention for low-power hold mode - deployed in industrial embedded controllers requiring deterministic SRAM latency and board-level memory expansion.

For engineers reviewing the CY7C1061GN30-10ZSXI datasheet, CY7C1061GN30-10ZSXI pinout, CY7C1061GN30-10ZSXI application, or CY7C1061GN30-10ZSXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA typical standby current, dual CE logic compatibility, VFBGA-48 vs. TSOP II-54 package options, and byte-selectable I/O0–I/O15 interface behavior.

Technical Context

This SRAM implements a fully asynchronous, non-multiplexed address/data interface with independent high- and low-byte enables (BHE, BLE), enabling partial-word writes without external gating. Its dual CE architecture (CE1 LOW + CE2 HIGH for enable) allows hierarchical memory decoding and seamless bank expansion across multiple devices.

It operates across industrial temperature (–40°C to +85°C) with automatic power-down when deselected, TTL-compatible I/O levels, and guaranteed data retention at 1.0 V VCC. The device uses standard CMOS process technology and requires no refresh cycles or clock input.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 × 9.5 × 1 mm body, JEDEC MO-276AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV102416AL-10TLI and MC14L102416FN10, CY7C1061GN30-10ZSXI uniquely combines dual CE decode, independent byte enables, 2.2–3.6 V operation, and 1.0 V data retention - making it the sole option for scalable, low-power, mixed-voltage industrial memory subsystems.

Availability

CY7C1061GN30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC I/O modules, automotive ADAS camera buffers, and medical infusion pump controllers requiring stable component supply, long-lifecycle support, and validated performance across –40°C to +85°C.

Supply support for CY7C1061GN30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and consumer applications, with emphasis on reliability and integration.

CY7C1061GN30 belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for deterministic latency, low-power hold modes, and seamless memory expansion in resource-constrained embedded systems.

FAQ

What is the minimum VCC required to retain data in CY7C1061GN30-10ZSXI?

The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table (page 7). At this voltage, internal circuitry enters low-power hold mode with ISB2 ≤ 30 µA, and all address/data pins enter high-impedance state. No external refresh or clock is needed during retention.

Can CY7C1061GN30-10ZSXI be used with a 2.5 V microcontroller without level shifters?

Yes. Its input thresholds (VIH = 2.0 V min, VIL = 0.6 V max at 2.2–2.7 V VCC) and TTL-compatible outputs (VOH ≥ 2.0 V, VOL ≤ 0.4 V) ensure direct interfacing with 2.5 V logic families. The 2.2–3.6 V operating range covers 2.5 V ±10% tolerances without translation.

How does the dual CE architecture improve memory expansion?

CE1 and CE2 form an AND-gated enable: only when CE1 = LOW and CE2 = HIGH is the device selected. This allows cascading multiple SRAMs using simple NAND gates - e.g., two address bits can decode four banks with zero additional logic, reducing PCB area and signal routing complexity.

Is the 48-ball VFBGA package RoHS and REACH compliant?

Yes. The CY7C1061GN30-10ZSXI suffix "ZSXI" denotes lead-free (Pb-free), halogen-free, and RoHS-compliant construction per JEDEC J-STD-020D moisture sensitivity level 3. Full compliance documentation is available under Infineon's material declaration portal (DocID: 001-93680 Rev. *A).