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Infineon Technologies CY7C1061GN30-10ZSXIT
- Part No.:
- CY7C1061GN30-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1061GN30-10ZSXIT.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,570
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Product details
Overview
CY7C1061GN30-10ZSXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, and dual Chip Enable (CE1/CE2) architecture. It supports byte-wide writes via BHE/BLE controls, delivers 90 mA active current at 100 MHz, and enters low-power data retention mode at 1.0 V. It is used in industrial control buffers, FPGA configuration storage, and real-time DSP data caching.
For engineers reviewing the CY7C1061GN30-10ZSXIT datasheet, CY7C1061GN30-10ZSXIT pinout, CY7C1061GN30-10ZSXIT application, or CY7C1061GN30-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA typical standby current, dual CE logic compatibility, and VFBGA-48 package footprint for high-density PCB layouts.
Technical Context
The device implements a full asynchronous SRAM interface with independent byte enable control: BLE enables I/O0–I/O7 for low-byte writes/reads, while BHE enables I/O8–I/O15 for high-byte operations. Address decoding covers A0–A19 (1 M words), supporting direct mapping to 16-bit microprocessor data buses without external address latching.
Power management relies on automatic CE-driven power-down: when CE1 is HIGH or CE2 is LOW, the device transitions to ISB2 standby (20 µA typ) or ICCDR retention (≤30 mA at 1.2 V). All I/Os enter high-impedance state during deselect, OE HIGH, or write cycles-ensuring clean bus sharing in multi-peripheral systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data valid delay - ensures deterministic timing for 100 MHz bus interfaces without wait states. |
| ICC (active) | 90 mA typical at 100 MHz - enables stable operation under sustained burst reads/writes in embedded controllers. |
| ISB2 (standby) | 20 µA typical - reduces system-level quiescent power in always-on industrial monitoring nodes. |
| VCC range | 2.2 V to 3.6 V - compatible with both 2.5 V and 3.3 V logic domains, eliminating level-shifter requirements. |
| Data retention VCC | 1.0 V minimum - preserves memory contents during brown-out conditions or controlled low-power sleep modes. |
| Package | 48-ball VFBGA (8 × 9.5 × 1 mm) - supports compact, thermally efficient layout in space-constrained edge devices. |
| Byte enable | BLE/BHE pins enable independent 8-bit writes - eliminates read-modify-write overhead in partial-word updates. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 × 9.5 × 1 mm body, JEDEC MO-276AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting 1 M word addressing; no internal latching - requires stable address during CE1/CE2 active window. |
| I/O0–I/O7 | Data bus (low byte) | Bi-directional 8-bit data path enabled only when BLE = LOW and CE1/CE2 active - isolates low byte during high-byte-only operations. |
| I/O8–I/O15 | Data bus (high byte) | Bi-directional 8-bit data path enabled only when BHE = LOW and CE1/CE2 active - allows independent high-byte update without disturbing low byte. |
| CE1, CE2 | Dual chip enable inputs | Active-low CE1 AND active-high CE2 required for selection - enables hierarchical memory banking and eliminates need for external decode logic. |
| WE | Write enable | Active-low signal initiating write cycle; overlaps with CE1/CE2 and BHE/BLE to define write boundary - determines tWC = 10 ns minimum cycle time. |
| OE | Output enable | Active-low control for output drivers; overrides WE state - permits read-while-write arbitration in pipelined architectures. |
| BLE, BHE | Byte low/high enable | Independent 8-bit write gating - eliminates RMW cycles and reduces bus contention in multi-master systems. |
| VCC, VSS | Power supply pins | Separate VCC (balls A16, C1, D1, E1, F1, G1) and VSS (balls A3, A5, B2, B4, C3, D4, E3, F4, G3, H2) connections - support low-noise decoupling for high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables direct attachment to 100 MHz microcontroller buses without wait-state insertion or glue logic. |
| Dual CE architecture (CE1/CE2) | Supports hierarchical memory mapping and eliminates external address decoder ICs in multi-SRAM systems. |
| Independent byte write control (BLE/BHE) | Reduces average write latency by 50% compared to full-word writes in protocol stack buffer management. |
| 1.0 V data retention | Preserves RAM contents during 3.3 V rail collapse, enabling fast wake-from-sleep recovery in battery-backed systems. |
| CMOS-compatible I/O | Direct interface to 2.5 V/3.3 V microprocessors and FPGAs without level translation circuitry. |
Applications
| Industrial PLC Data Buffer | FPGA Configuration Storage |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data must be buffered between scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit data capture at 10 ns cycle time, synchronized to PLC scan clock edges. Use Value: Eliminates FIFO overflow during peak analog input sampling bursts due to guaranteed tRC = 10 ns read/write timing. |
Use Scenario: Storing partial reconfiguration bitstreams for Xilinx Spartan-7 FPGAs in adaptive motor control systems. IC Role / Device Role / Timing Role: Non-volatile configuration cache holding bitstream segments loaded on-demand during runtime reconfiguration. Use Value: Enables sub-100 µs partial reconfiguration latency using BHE/BLE to load only changed logic blocks. |
| DSP Algorithm Scratchpad | Medical Imaging Frame Buffer |
Use Scenario: Temporary storage of intermediate FFT coefficients in TI C6000-series DSP-based ultrasound beamforming. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple DMA channels and CPU cores. Use Value: Sustains 100 MB/s sustained bandwidth via independent byte enables, avoiding bank conflicts in multi-threaded processing. |
Use Scenario: Dual-port frame buffering in portable X-ray detectors requiring simultaneous acquisition and display rendering. IC Role / Device Role / Timing Role: Single-port SRAM used in ping-pong configuration with external arbiter to decouple 30 fps image capture from 60 Hz display refresh. Use Value: Guarantees tAA = 10 ns read access to support real-time gamma correction LUT lookups without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416AL-10MLI | Same density and speed (10 ns), but single CE input and no BHE/BLE - requires external byte masking logic. | Lacks native byte-write capability; increases PCB area and routing complexity in partial-word update systems. | Select when cost sensitivity outweighs design simplicity and byte-enable flexibility is not required. |
| Micron MT45W8MW16BGX-10 IT:B | 10 ns access, but uses TSOP-II-54 package (22.4 × 11.84 mm) - 2.4× larger footprint than VFBGA-48. | Higher thermal resistance (θJA = 93.6 °C/W vs. 31.5 °C/W) limits use in sealed, fanless enclosures. | Select when legacy board compatibility with TSOP-II sockets is mandatory and thermal headroom is available. |
Compared with IS61LV102416AL-10MLI and MT45W8MW16BGX-10 IT:B, CY7C1061GN30-10ZSXIT provides native byte-write control and superior thermal performance in a compact VFBGA, making it optimal for space- and power-constrained real-time embedded systems.
Availability
CY7C1061GN30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, FPGA configuration storage, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1061GN30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with headquarters in San Jose, CA.
This device belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for deterministic timing, low-voltage operation, and seamless integration into resource-constrained embedded control systems.
FAQ
What is the minimum VCC required to retain data in CY7C1061GN30-10ZSXIT?
The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table (page 7 of Rev. *A datasheet). At VCC = 1.2 V, ICCDR is ≤30 mA; retention remains valid across the full industrial temperature range (–40 °C to +85 °C) with CE1 HIGH or CE2 LOW to activate power-down mode.
Does CY7C1061GN30-10ZSXIT support true dual-port operation?
No, it is a single-port asynchronous SRAM. It supports concurrent read and write only through external arbitration - e.g., using OE HIGH during write cycles to place outputs in high-Z. True dual-port functionality (simultaneous independent read/write ports) requires dedicated dual-port SRAMs like the IDT70V25.
Can BLE and BHE be asserted simultaneously for full 16-bit writes?
Yes. When both BLE and BHE are LOW while CE1/CE2 are active and WE is LOW, all 16 I/O lines (I/O0–I/O15) participate in the write operation. This is explicitly supported in the Functional Description (page 1) and Truth Table (page 12), enabling standard full-word writes without additional control logic.
Is the 48-ball VFBGA package RoHS-compliant and lead-free?
Yes. The "ZSXIT" suffix denotes a lead-free, RoHS-compliant 48-ball VFBGA package per Cypress's ordering code definitions (page 13 of Rev. *A datasheet). Ball composition is 100% matte tin over copper, with no lead content, and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3).
CY7C1061GN30-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1061GN30-10ZSXIT FAQ
1.How can I place an order for CY7C1061GN30-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GN30-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GN30-10ZSXIT reliable?
The price and inventory of CY7C1061GN30-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN30-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7C1061GN30-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN30-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GN30-10ZSXIT?
CY7C1061GN30-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GN30-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GN30-10ZSXIT?
For technical support, including CY7C1061GN30-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN30-10ZSXIT requirements.
6.How does Aetrix verify that CY7C1061GN30-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1061GN30-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN30-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7C1061GN30-10ZSXIT?
All CY7C1061GN30-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN30-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GN30-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7C1061GN30-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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