Infineon Technologies CY7C1061GN30-10ZXI

Overview

CY7C1061GN30-10ZXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, and dual chip enable (CE1/CE2) control logic. It supports byte-wide writes via BHE/BLE, delivers 90 mA active current at 100 MHz, and retains data down to 1.0 V - deployed in industrial embedded controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1061GN30-10ZXI datasheet, CY7C1061GN30-10ZXI pinout, CY7C1061GN30-10ZXI application, or CY7C1061GN30-10ZXI equivalent, key selection criteria include tAA = 10 ns timing, VFBGA-48 package footprint, dual CE architecture for hierarchical memory mapping, and ISB2 = 20 µA standby current under CMOS input conditions.

Technical Context

This SRAM implements a full asynchronous interface with independent byte enables (BHE/BLE) enabling 8-bit sub-word writes without read-modify-write cycles. Its dual CE architecture (CE1 LOW + CE2 HIGH = active) allows seamless integration into multi-bank memory systems with hierarchical address decoding.

The device uses standard TTL-compatible I/O levels and supports automatic power-down when deselected, with two distinct standby modes: ISB1 (40 mA, TTL inputs) and ISB2 (20 µA, CMOS inputs), enabling precise power-state management in mixed-signal industrial systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 mm × 9.5 mm × 1.0 mm, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with IS61WV102416BLL-10MLI, CY7C1061GN30-10ZXI provides superior system-level integration via dual CE and independent byte enables, reducing external logic count and improving timing margin in multi-bank architectures; the ON Semiconductor part is functionally unrelated and unsuitable as a replacement.

Availability

CY7C1061GN30-10ZXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame stores, and avionics sensor fusion caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061GN30-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor, now part of Infineon Technologies, designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1061GN series targets deterministic, low-latency memory subsystems in harsh-environment embedded systems - emphasizing fast access, wide voltage tolerance, and robust data retention under brown-out conditions.

FAQ

What is the maximum operating frequency supported by CY7C1061GN30-10ZXI?

The device does not operate on a clock signal - it is an asynchronous SRAM. Its 10 ns access time (tAA) supports reliable interface with microprocessors and FPGAs running up to 100 MHz bus frequencies, provided setup/hold timing margins are met per the AC switching characteristics table in the datasheet.

Does CY7C1061GN30-10ZXI require external pull-up resistors on CE1, CE2, or BHE/BLE pins?

No. All control inputs (CE1, CE2, WE, OE, BHE, BLE) are CMOS-compatible with rail-to-rail voltage thresholds and do not require external biasing. Internal input leakage is ±1 µA, and VIH/VIL specifications ensure clean logic recognition without pull-ups under standard drive conditions.

Can CY7C1061GN30-10ZXI be operated at 1.8 V supply?

Yes - the specified VCC range is 2.2 V to 3.6 V. Operation at 1.8 V falls outside the validated industrial range and violates the Absolute Maximum Rating for VCC (minimum 2.2 V). Doing so risks data corruption, timing violations, and reduced reliability per the DC Electrical Characteristics table.

How is data retention guaranteed during power loss?

Data retention is maintained down to 1.0 V VCC with CE1 deasserted (HIGH) and CE2 asserted (LOW), drawing only 30 mA max (ICC_DR). The device enters retention mode automatically upon chip deselect, preserving all 16 Mbit contents without external refresh or backup circuitry.